Inventor · disambiguated record
Katsunori Yanashima
Also filed as: YANASHIMA KATSUNORI
32 granted patents·21 pending applications·337 citations·filing 1997–2020
96Inventor score
Top patents by PatentIndex Score
53 records- 0194US6921673B2Nitride semiconductor device and method of manufacturing the sameSONY CORP·Filed 2002·Granted Jul 26, 2005·75 cites·5 claims
- 0292US5993542AMethod for growing nitride III-V compound semiconductor layers and method for fabricating a nitride III-V compound semiconductor substrateSONY CORP·Filed 1997·Granted Nov 30, 1999·85 cites·23 claims
- 0388US6509579B2Semiconductor deviceSONY CORP·Filed 2001·Granted Jan 21, 2003·45 cites·20 claims
- 0486US7754504B2Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diodeSONY CORP·Filed 2006·Granted Jul 13, 2010·14 cites·13 claims
- 0584US8718110B2Nitride semiconductor laser and epitaxial substrateKYONO TAKASHI·Filed 2012·Granted May 6, 2014·6 cites·21 claims
- 0683US6972206B2Nitride semiconductor, semiconductor device, and method of manufacturing the sameSONY CORP·Filed 2005·Granted Dec 6, 2005·6 cites·18 claims
- 0781US7282379B2Nitride semiconductor, semiconductor device, and method of manufacturing the sameSONY CORP·Filed 2005·Granted Oct 16, 2007·5 cites·26 claims
- 0879US6939730B2Nitride semiconductor, semiconductor device, and method of manufacturing the sameSONY CORP·Filed 2002·Granted Sep 6, 2005·16 cites·27 claims
- 0978US9911894B2Nitride-based III-V group compound semiconductorSONY CORP·Filed 2015·Granted Mar 6, 2018·2 cites·18 claims
- 1075US6960262B2Thin film-forming apparatusSONY CORP·Filed 2003·Granted Nov 1, 2005·15 cites·10 claims
- 1173US6836498B2Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereofSONY CORP·Filed 2001·Granted Dec 28, 2004·14 cites·18 claims
- 1270US9425348B2Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Aug 23, 2016·1 cites·13 claims
- 1370US8859401B2Method for growing a nitride-based III-V group compound semiconductorOHMAE AKIRA·Filed 2011·Granted Oct 14, 2014·2 cites·14 claims
- 1467US6603147B1Semiconductor light emitting deviceSONY CORP·Filed 2000·Granted Aug 5, 2003·16 cites·5 claims
- 1565US8953656B2III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser deviceKYONO TAKASHI·Filed 2012·Granted Feb 10, 2015·1 cites·15 claims
- 1662US9231375B2Semiconductor deviceSONY CORP·Filed 2013·Granted Jan 5, 2016·1 cites·6 claims
- 1761US9034738B2Method for growing a nitride-based III-V Group compound semiconductorOHMAE AKIRA·Filed 2006·Granted May 19, 2015·1 cites·15 claims
- 1860US6890785B2Nitride semiconductor, semiconductor device, and manufacturing methods for the sameSONY CORP·Filed 2003·Granted May 10, 2005·6 cites·7 claims
- 1958US9231370B2Group III nitride semiconductor light emitting deviceSUMITOMO TAKAMICHI·Filed 2012·Granted Jan 5, 2016·1 cites·20 claims
- 2057US11973316B2Vertical cavity surface emitting laser element and electronic apparatusSONY CORP·Filed 2019·Granted Apr 30, 2024·0 cites·14 claims
- 2156US2013250992A1Method for manufacturing semiconductor device and semiconductor deviceSONY CORP·Filed 2013·Application pending·0 cites
- 2255US2015050768A1Laser diode device and method of manufacturing laser diode deviceSONY CORP·Filed 2014·Application pending·0 cites
- 2354US8891568B2Laser diode device and method of manufacturing laser diode deviceSONY CORP·Filed 2012·Granted Nov 18, 2014·0 cites·3 claims
- 2454US2006286695A1Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layerYANASHIMA KATSUNORI·Filed 2006·Application pending·0 cites
- 2553US2006172513A1Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layerYANASHIMA KATSUNORI·Filed 2006·Application pending·0 cites
- 2652US8435880B2Method for manufacturing semiconductor device and semiconductor deviceOHMAE AKIRA·Filed 2010·Granted May 7, 2013·0 cites·10 claims
- 2752US6104039AP-type nitrogen compound semiconductor and method of manufacturing sameSONY CORP·Filed 1998·Granted Aug 15, 2000·17 cites·9 claims
- 2851US11984533B2Light emitting device using a gallium nitride (GaN) based materialSONY CORP·Filed 2019·Granted May 14, 2024·0 cites·10 claims
- 2951US2010317136A1Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layerSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 3050US6730611B2Nitride semiconductor growing processSONY CORP·Filed 2002·Granted May 4, 2004·2 cites·13 claims
- 3148US8908732B2Group-III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Dec 9, 2014·0 cites·19 claims
- 3246US10686291B2Semiconductor light emitting element and semiconductor light emitting element assemblySONY CORP·Filed 2015·Granted Jun 16, 2020·0 cites·18 claims
- 3345US10236663B2Semiconductor optical deviceSONY CORP·Filed 2016·Granted Mar 19, 2019·0 cites·14 claims
- 3445US2022190555A1Compound semiconductor layer stack, method of forming the same, and light-emitting deviceSONY GROUP CORP·Filed 2020·Application pending·0 cites
- 3545US2021320224A1Light-emitting deviceSONY CORP·Filed 2019·Application pending·0 cites
- 3645US2005221515A1Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type III-V group compound semiconductor layer, method for growing semiconductor layer, and method for growing layerYANASHIMA KATSUNORI·Filed 2004·Application pending·0 cites
- 3744US2010308349A1Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, and light-emitting diode display and electronic deviceSONY CORP·Filed 2010·Application pending·0 cites
- 3843US6471769B2Method of manufacturing a nitride series III-V group compound semiconductorSONY CORP·Filed 1999·Granted Oct 29, 2002·6 cites·12 claims
- 3943US2005000407A1Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereofSONY CORP·Filed 2004·Application pending·0 cites
- 4043US2005098791A1Nitride semiconductor, semiconductor device, and manufacturing methods for the sameSONY CORP·Filed 2004·Application pending·0 cites
- 4142US8923354B2Nitride semiconductor laser, epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Dec 30, 2014·0 cites·24 claims
- 4242US2004134428A1Thin-film deposition deviceFiled 2003·Application pending·0 cites
- 4341US2013009202A1Group iii nitride semiconductor device, method of fabricating group iii nitride semiconductor deviceSONY CORP·Filed 2012·Application pending·0 cites
- 4441US2005184302A1Nitride semiconductor device and method of manufacturing the sameFiled 2005·Application pending·0 cites
- 4540US8731016B2Nitride semiconductor light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted May 20, 2014·0 cites·20 claims
- 4640US2021135050A1Template substrate, electronic device, light emitting device, method of manufacturing template substrate, and method of manufacturing electronic deviceSONY CORP·Filed 2018·Application pending·0 cites
- 4740US2012327967A1Group iii nitride semiconductor laser device, epitaxial substrate, method of fabricating group iii nitride semiconductor laser deviceENYA YOHEI·Filed 2012·Application pending·0 cites
- 4838US8477818B2Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser deviceKUMANO TETSUYA·Filed 2012·Granted Jul 2, 2013·0 cites·26 claims
- 4938US2005238806A1Method for forming organic thin filmYANASHIMA KATSUNORI·Filed 2003·Application pending·0 cites
- 5038US2004089232A1Organic film formation apparatusFiled 2003·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →