Inventor · disambiguated record
Hidehiro Kojiri
Also filed as: KOJIRI HIDEHIRO
10 granted patents·7 pending applications·63 citations·filing 2000–2019
86Inventor score
Top patents by PatentIndex Score
17 records- 0192US8507304B2Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)KRYLIOUK OLGA·Filed 2010·Granted Aug 13, 2013·15 cites·27 claims
- 0282US8778783B2Methods for improved growth of group III nitride buffer layersMELNIK YURIY·Filed 2012·Granted Jul 15, 2014·7 cites·17 claims
- 0381US8980002B2Methods for improved growth of group III nitride semiconductor compoundsMELNIK YURIY·Filed 2012·Granted Mar 17, 2015·2 cites·19 claims
- 0481US6432318B1Dielectric etch process reducing striations and maintaining critical dimensionsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 13, 2002·24 cites·16 claims
- 0575US8138069B2Substrate pretreatment for subsequent high temperature group III depositionsMELNIK YURIY·Filed 2010·Granted Mar 20, 2012·3 cites·19 claims
- 0670US6800213B2Precision dielectric etch using hexafluorobutadieneFiled 2002·Granted Oct 5, 2004·11 cites·22 claims
- 0765US9431477B2Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)KRYLIOUK OLGA·Filed 2013·Granted Aug 30, 2016·1 cites·16 claims
- 0847US2012156863A1Substrate pretreatment for subsequent high temperature group iii depositionsMELNIK YURIY·Filed 2012·Application pending·0 cites
- 0944US11145504B2Method of forming film stacks with reduced defectsAPPLIED MATERIALS INC·Filed 2019·Granted Oct 12, 2021·0 cites·18 claims
- 1044US2010279020A1METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPEAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 1144US2010024840A1Chamber plasma-cleaning process schemeHSIEH CHANG-LIN·Filed 2008·Application pending·0 cites
- 1243US8853086B2Methods for pretreatment of group III-nitride depositionsMELNIK YURIY·Filed 2012·Granted Oct 7, 2014·0 cites·19 claims
- 1343US2009114245A1In-situ chamber cleaning methodKOJIRI HIDEHIRO·Filed 2007·Application pending·0 cites
- 1441US2011140071A1Nano-spherical group iii-nitride materialsKRYLIOUK OLGA·Filed 2010·Application pending·0 cites
- 1540US2012235116A1Light emitting diode with enhanced quantum efficiency and method of fabricationSU JIE·Filed 2010·Application pending·0 cites
- 1639US10755903B2RPS defect reduction by cyclic clean induced RPS coolingAPPLIED MATERIALS INC·Filed 2017·Granted Aug 25, 2020·0 cites·20 claims
- 1736US2011263111A1Group iii-nitride n-type dopingMELNIK YURIY·Filed 2011·Application pending·0 cites
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