Inventor · disambiguated record
Gottfried Landwehr
Also filed as: LANDWEHR GOTTFRIED
7 granted patents·210 citations·filing 1996–2001
87Inventor score
Files withINFINEON TECHNOLOGIES AG3SIEMENS AG2OSRAM OPTO SEMICONDUCTORS & CO1OSRAM OPTO SEMICONDUCTORS GMBH1
Top patents by PatentIndex Score
7 records- 0182US6372536B1II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junctionOSRAM OPTO SEMICONDUCTORS & CO·Filed 2000·Granted Apr 16, 2002·73 cites·17 claims
- 0280US6618410B1Optoelectronic semiconductor componentINFINEON TECHNOLOGIES AG·Filed 1999·Granted Sep 9, 2003·53 cites·14 claims
- 0372US6399473B1Method of producing a II-VI semiconductor component containing selenium and/or sulrfurOSRAM OPTO SEMICONDUCTORS GMBH·Filed 2000·Granted Jun 4, 2002·16 cites·14 claims
- 0462US6265734B1Opto-electronic component made from II-VI semiconductor materialSIEMENS AG·Filed 1996·Granted Jul 24, 2001·26 cites·3 claims
- 0562US6147365AOptoelectronic semiconductor componentINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 14, 2000·26 cites·16 claims
- 0647US6495859B2Opto-electronic component made from II-VI semiconductor materialSIEMENS AG·Filed 2001·Granted Dec 17, 2002·2 cites·4 claims
- 0747US6285697B1Semiconductor laser componentINFINEON TECHNOLOGIES AG·Filed 1999·Granted Sep 4, 2001·14 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →