Inventor · disambiguated record
Vladimir F. Drobny
Also filed as: DROBNY VLADIMIR · DROBNY VLADIMIR F · DROBNY VLADIMIR FRANK
20 granted patents·3 pending applications·321 citations·filing 1979–2017
94Inventor score
Files withTEXAS INSTRUMENTS INC13NORTHERN TELECOM LTD2BURR BROWN CORP1CHATTERJEE AMITAVA1DROBNY VLADIMIR1
Top patents by PatentIndex Score
23 records- 0195US6576535B2Carbon doped epitaxial layer for high speed CB-CMOSTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 10, 2003·132 cites·20 claims
- 0292US4223308ALCDs (Liquid crystal displays) controlled by thin film diode switchesNORTHERN TELECOM LTD·Filed 1979·Granted Sep 16, 1980·65 cites·19 claims
- 0388US7416951B2Thin film resistors integrated at two different metal interconnect levels of single dieTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 26, 2008·16 cites·8 claims
- 0487US4251136ALCDs (Liquid crystal displays) controlled by thin film diode switchesNORTHERN TELECOM LTD·Filed 1979·Granted Feb 17, 1981·46 cites·12 claims
- 0575US7202533B1Thin film resistors integrated at a single metal interconnect level of dieTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 10, 2007·7 cites·12 claims
- 0673US6274464B2Epitaxial cleaning process using HCL and N-type dopant gas to reduce defect density and auto doping effectsTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 14, 2001·19 cites·30 claims
- 0771US8053322B2Epitaxial deposition-based processes for reducing gate dielectric thinning at trench edges and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted Nov 8, 2011·5 cites·21 claims
- 0869US8114744B2Methods for reducing gate dielectric thinning on trench isolation edges and integrated circuits therefromCHATTERJEE AMITAVA·Filed 2008·Granted Feb 14, 2012·5 cites·17 claims
- 0965US7388271B2Schottky diode with minimal vertical current flowTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 17, 2008·3 cites·15 claims
- 1063US8093115B2Tuning of SOI substrate dopingSCHWARTZ WOLFGANG·Filed 2010·Granted Jan 10, 2012·2 cites·6 claims
- 1159US7964919B2Thin film resistors integrated at two different metal single dieTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 21, 2011·1 cites·20 claims
- 1258US10535783B2Unguarded schottky barrier diodesTEXAS INSTRUMENTS INC·Filed 2017·Granted Jan 14, 2020·0 cites·20 claims
- 1357US9705011B2Unguarded schottky barrier diodesTEXAS INSTRUMENTS INC·Filed 2016·Granted Jul 11, 2017·0 cites·9 claims
- 1457US4622736ASchottky barrier diodesTEKTRONIX INC·Filed 1984·Granted Nov 18, 1986·13 cites·4 claims
- 1554US10050157B2Spike implanted Schottky diodeDROBNY VLADIMIR F·Filed 2005·Granted Aug 14, 2018·2 cites·14 claims
- 1654US9391160B2Unguarded Schottky barrier diodes with dielectric underetch at silicide interfaceTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 12, 2016·0 cites·6 claims
- 1749US8030155B2Schottky diode with minimal vertical current flowTEXAS INSTRUMENTS INC·Filed 2008·Granted Oct 4, 2011·0 cites·7 claims
- 1847US6335558B1Complementary bipolar/CMOS epitaxial structure and methodTEXAS INSTRUMENTS INC·Filed 2000·Granted Jan 1, 2002·2 cites·5 claims
- 1945US8435873B2Unguarded Schottky barrier diodes with dielectric underetch at silicide interfaceDROBNY VLADIMIR FRANK·Filed 2007·Granted May 7, 2013·0 cites·8 claims
- 2039US2007052057A1Method and Schottky diode structure for avoiding intrinsic NPM transistor operationTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 2135US2006022291A1Unguarded schottky diodes with sidewall spacer at the perimeter of the diodeDROBNY VLADIMIR·Filed 2004·Application pending·0 cites
- 2230US6080644AComplementary bipolar/CMOS epitaxial structure and processBURR BROWN CORP·Filed 1998·Granted Jun 27, 2000·3 cites·14 claims
- 2329US2003094435A1Epitaxial cleaning process using HCL and N-type dopant gas to reduce defect density and auto doping effectsFiled 2001·Application pending·0 cites
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