Inventor · disambiguated record
Tomohiro Hamajima
Also filed as: HAMAJIMA TOMOHIRO
14 granted patents·341 citations·filing 1995–2018
94Inventor score
Top patents by PatentIndex Score
14 records- 0185US7071512B2Non-volatile semiconductor memory deviceNEC ELECTRONICS CORP·Filed 2005·Granted Jul 4, 2006·12 cites·12 claims
- 0281US6096433ALaminated substrate fabricated from semiconductor wafers bonded to each other without contact between insulating layer and semiconductor layer and process of fabrication thereofNEC CORP·Filed 1998·Granted Aug 1, 2000·57 cites·4 claims
- 0380US5985681AMethod of producing bonded substrate with silicon-on-insulator structureNEC CORP·Filed 1997·Granted Nov 16, 1999·64 cites·30 claims
- 0477US5869386AMethod of fabricating a composite silicon-on-insulator substrateNEC CORP·Filed 1996·Granted Feb 9, 1999·53 cites·11 claims
- 0576US6979856B2Semiconductor memory device and control method and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2003·Granted Dec 27, 2005·25 cites·26 claims
- 0665US10494804B2Sanitary washing deviceAISIN SEIKI·Filed 2018·Granted Dec 3, 2019·1 cites·5 claims
- 0765US6013954ASemiconductor wafer having distortion-free alignment regionsNEC CORP·Filed 1997·Granted Jan 11, 2000·31 cites·6 claims
- 0863US6004406ASilicon on insulating substrateNEC CORP·Filed 1995·Granted Dec 21, 1999·24 cites·2 claims
- 0963US5773352AFabrication process of bonded total dielectric isolation substrateNEC CORP·Filed 1995·Granted Jun 30, 1998·30 cites·11 claims
- 1060US8138551B2Semiconductor device with transistors and its manufacturing methodHAMAJIMA TOMOHIRO·Filed 2009·Granted Mar 20, 2012·3 cites·12 claims
- 1158US6346435B1Laminated substrate fabricated from semiconductor wafers bonded to each other without contact between insulating layer and semiconductor layer and process of fabrication thereofNEC CORP·Filed 2000·Granted Feb 12, 2002·7 cites·17 claims
- 1248US5691231AMethod of manufacturing silicon on insulating substrateNEC CORP·Filed 1997·Granted Nov 25, 1997·13 cites·3 claims
- 1346US5847438ABonded IC substrate with a high breakdown voltage and large current capabilitiesNEC CORP·Filed 1996·Granted Dec 8, 1998·14 cites·3 claims
- 1437US5969401ASilicon on insulator substrate with improved insulation patternsNEC CORP·Filed 1997·Granted Oct 19, 1999·7 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →