Inventor · disambiguated record
Hong-Sun Hwang
Also filed as: HWANG HONG SUN
48 granted patents·1 pending application·721 citations·filing 1988–2016
98Inventor score
Top patents by PatentIndex Score
49 records- 0198US8619490B2Semiconductor memory devicesYU HAK-SOO·Filed 2011·Granted Dec 31, 2013·179 cites·22 claims
- 0296US8588017B2Memory circuits, systems, and modules for performing DRAM refresh operations and methods of operating the samePARK CHUL-WOO·Filed 2011·Granted Nov 19, 2013·34 cites·31 claims
- 0395US9978430B2Memory devices providing a refresh request and memory controllers responsive to a refresh requestSEO EUN SUNG·Filed 2013·Granted May 22, 2018·34 cites·26 claims
- 0495US8654595B2Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parametersKIM CHAN-KYUNG·Filed 2012·Granted Feb 18, 2014·24 cites·20 claims
- 0592US8553445B2Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the sameBAEK IN-GYU·Filed 2011·Granted Oct 8, 2013·14 cites·7 claims
- 0692US8355291B2Resistive memory device and method of controlling refresh operation of resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 15, 2013·15 cites·20 claims
- 0790US9653141B2Method of operating a volatile memory device and a memory controllerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·10 cites·9 claims
- 0890US8677216B2Stacked semiconductor memory device and related error-correction methodPARK CHUL-WOO·Filed 2011·Granted Mar 18, 2014·14 cites·19 claims
- 0989US8477554B2Semiconductor memory deviceYU HAK-SOO·Filed 2011·Granted Jul 2, 2013·13 cites·18 claims
- 1088US9335951B2Memory device for reducing a write fail, a system including the same, and a method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 10, 2016·9 cites·15 claims
- 1188US8934311B2Semiconductor memory device capable of screening a weak bit and repairing the sameYU HAK-SOO·Filed 2012·Granted Jan 13, 2015·11 cites·6 claims
- 1287US9171589B2Memory device, method of performing read or write operation and memory system including the sameKIM CHAN-KYUNG·Filed 2012·Granted Oct 27, 2015·10 cites·51 claims
- 1387US8553484B2Semiconductor memory device for data sensingKIM SUA·Filed 2011·Granted Oct 8, 2013·12 cites·24 claims
- 1486US9042152B2Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory deviceKIM CHAN-KYUNG·Filed 2012·Granted May 26, 2015·10 cites·20 claims
- 1586US8730710B2Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 20, 2014·8 cites·8 claims
- 1685US8873324B2Method of refreshing a memory device, refresh address generator and memory devicePARK CHUL-WOO·Filed 2011·Granted Oct 28, 2014·9 cites·54 claims
- 1783US8693269B2Memory device for managing timing parametersKANG UK-SONG·Filed 2012·Granted Apr 8, 2014·8 cites·20 claims
- 1882US9165637B2Volatile memory device and a memory controllerKIM SANG-YUN·Filed 2012·Granted Oct 20, 2015·7 cites·21 claims
- 1982US8769356B2Bad page management in memory device or systemYU HAK-SOO·Filed 2012·Granted Jul 1, 2014·8 cites·18 claims
- 2081US8634227B2Resistive memory device having voltage level equalizerYU HAK SOO·Filed 2011·Granted Jan 21, 2014·8 cites·6 claims
- 2181US5867442AVariable output voltage booster circuits and methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 2, 1999·47 cites·15 claims
- 2279US8917564B2Three-dimensional semiconductor memory device having compensating data skewing according to interlayer timing delay and method of de-skewing data thereinSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 23, 2014·5 cites·7 claims
- 2378US8488399B2Semiconductor devices having a three-dimensional stacked structure and methods of de-skewing data thereinYU HAK-SOO·Filed 2011·Granted Jul 16, 2013·5 cites·13 claims
- 2476US8638621B2Semiconductor memory device having a hierarchical bit line schemeSON JONG-PIL·Filed 2012·Granted Jan 28, 2014·5 cites·20 claims
- 2575US7224596B2Apparatus and method for repairing semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·12 cites·18 claims
- 2675US5757714ASemiconductor memory device with on-chip boosted power supply voltage generatorSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 26, 1998·36 cites·15 claims
- 2774US6362995B1Arrangements of interface logic, memory core, data shift and pad blocks for integrated circuit memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 26, 2002·30 cites·14 claims
- 2873US8935467B2Memory system, and a method of controlling an operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 13, 2015·3 cites·19 claims
- 2972US9070465B2Anti-fuse circuit using MTJ breakdown and semiconductor device including sameSON JONG-PIL·Filed 2012·Granted Jun 30, 2015·4 cites·8 claims
- 3072US5130580ASense amplifier driving circuit employing current mirror for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Jul 14, 1992·34 cites·17 claims
- 3169US8705297B2Semiconductor memory devices and semiconductor memory systemsKIM SUA·Filed 2011·Granted Apr 22, 2014·4 cites·25 claims
- 3269US7382668B2Full-stress testable memory device having an open bit line architecture and method of testing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 3, 2008·7 cites·23 claims
- 3368US7586804B2Memory core, memory device including a memory core, and method thereof testing a memory coreSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·6 cites·15 claims
- 3467US9042194B2Refresh method, refresh address generator, volatile memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 26, 2015·3 cites·18 claims
- 3567US8619458B2Bidirectional resistive memory devices using selective read voltage polarityBAEK IN-GYU·Filed 2012·Granted Dec 31, 2013·3 cites·18 claims
- 3666US8737112B2Resistive memory devices, initialization methods, and electronic devices incorporating samePARK CHUL WOO·Filed 2011·Granted May 27, 2014·3 cites·11 claims
- 3765US5808955AIntegrated circuit memory devices including sub-word line drivers and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 15, 1998·26 cites·21 claims
- 3861US8780656B2Stacked memory device and method of repairing samePARK CHUL-WOO·Filed 2011·Granted Jul 15, 2014·2 cites·20 claims
- 3961US4948993ADistributed sensing control circuit for a sense amplifier of the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1988·Granted Aug 14, 1990·18 cites·6 claims
- 4054US9076539B2Common source semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 7, 2015·1 cites·19 claims
- 4154US6154404AIntegrated circuit memory devices having sense amplifier driver circuits therein that improve writing efficiencySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 28, 2000·14 cites·9 claims
- 4253US9053963B2Multiple well bias memorySAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·1 cites·20 claims
- 4352US8665644B2Stacked memory device and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 4, 2014·0 cites·7 claims
- 4451US8830715B2Semiconductor memory device including vertical channel transistorsYU HAK-SOO·Filed 2011·Granted Sep 9, 2014·1 cites·18 claims
- 4549US8441852B2Stacked memory device and method of fabricating samePARK CHUL-WOO·Filed 2011·Granted May 14, 2013·0 cites·17 claims
- 4642US2016224243A1Memory device for reducing a write fail, a system including the same, and a method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 4739US6194931B1Circuit for generating backbias voltage corresponding to frequency and method thereof for use in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 27, 2001·6 cites·8 claims
- 4835US5214600ASemiconductor memory array having interdigitated bit-line structureSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted May 25, 1993·5 cites·13 claims
- 4933US5796668AIntegrated circuit memory devices having reduced write cycle times and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 18, 1998·3 cites·8 claims
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