Inventor · disambiguated record
Paul E. Bakeman, Jr.
Also filed as: BAKEMAN JR PAUL E · BAKEMAN JR PAUL EVANS · BAKEMAN PAUL EVANS JR
24 granted patents·728 citations·filing 1975–2013
97Inventor score
Top patents by PatentIndex Score
24 records- 0196US5943254AMultichip semiconductor structures with consolidated circuitry and programmable ESD protection for input/output nodesIBM·Filed 1997·Granted Aug 24, 1999·171 cites·21 claims
- 0294US7482254B2Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heatingULTRATECH INC·Filed 2005·Granted Jan 27, 2009·25 cites·24 claims
- 0392US5703747AMultichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods thereforeFiled 1995·Granted Dec 30, 1997·118 cites·19 claims
- 0489US3983552APilferage detection systemsAMERICAN DISTRICT TELEGRAPH CO·Filed 1975·Granted Sep 28, 1976·50 cites·37 claims
- 0587US5226732AEmissivity independent temperature measurement systemsIBM·Filed 1992·Granted Jul 13, 1993·85 cites·20 claims
- 0681US4506436AMethod for increasing the radiation resistance of charge storage semiconductor devicesIBM·Filed 1981·Granted Mar 26, 1985·52 cites·11 claims
- 0779US5731246AProtection of aluminum metallization against chemical attack during photoresist developmentIBM·Filed 1996·Granted Mar 24, 1998·48 cites·24 claims
- 0874US8274160B2Active area bonding compatible high current structuresGASNER JOHN T·Filed 2010·Granted Sep 25, 2012·3 cites·22 claims
- 0973US4369072AMethod for forming IGFET devices having improved drain voltage characteristicsIBM·Filed 1981·Granted Jan 18, 1983·43 cites·12 claims
- 1068US7795130B2Active area bonding compatible high current structuresINTERSIL INC·Filed 2007·Granted Sep 14, 2010·3 cites·11 claims
- 1168US4622573ACMOS contacting structure having degeneratively doped regions for the prevention of latch-upIBM·Filed 1986·Granted Nov 11, 1986·25 cites·7 claims
- 1267US7224074B2Active area bonding compatible high current structuresINTERSIL INC·Filed 2005·Granted May 29, 2007·3 cites·57 claims
- 1363US5480748AProtection of aluminum metallization against chemical attack during photoresist developmentIBM·Filed 1994·Granted Jan 2, 1996·29 cites·14 claims
- 1460US7005369B2Active area bonding compatible high current structuresINTERSIL AMERICAN INC·Filed 2003·Granted Feb 28, 2006·8 cites·44 claims
- 1558US5952160AMethod and system for controlling the relative size of images formed in light-sensitive mediaIBM·Filed 1996·Granted Sep 14, 1999·13 cites·25 claims
- 1656US8946912B2Active area bonding compatible high current structuresINTERSIL INC·Filed 2013·Granted Feb 3, 2015·0 cites·15 claims
- 1754US8652960B2Active area bonding compatible high current structuresINTERSIL INC·Filed 2012·Granted Feb 18, 2014·0 cites·19 claims
- 1854US5930098AMultichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods thereforeIBM·Filed 1997·Granted Jul 27, 1999·16 cites·11 claims
- 1953US5635285AMethod and system for controlling the relative size of images formed in light-sensitive mediaIBM·Filed 1995·Granted Jun 3, 1997·11 cites·8 claims
- 2051US8569896B2Active area bonding compatible high current structuresGASNER JOHN T·Filed 2012·Granted Oct 29, 2013·0 cites·19 claims
- 2145US5556802AMethod of making corrugated vertical stack capacitor (CVSTC)IBM·Filed 1995·Granted Sep 17, 1996·12 cites·9 claims
- 2240US5347153AShort channel transistorsIBM·Filed 1993·Granted Sep 13, 1994·7 cites·17 claims
- 2332US3956753AData collecting systemRRC INTERNATIONAL INC·Filed 1975·Granted May 11, 1976·5 cites·3 claims
- 2431US5764342AMethod and system for controlling the relative size of images formed in light-sensitive mediaIBM·Filed 1996·Granted Jun 9, 1998·1 cites·7 claims
Join the waitlist — get patent alerts
Get an alert when Paul E. Bakeman, Jr. files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →