Inventor · disambiguated record
Toshijaru Furukawa
Also filed as: FURUKAWA TOSHIJARU
4 granted patents·1 pending application·52 citations·filing 2005–2008
71Inventor score
Files withIBM5
Top patents by PatentIndex Score
5 records- 0197US7256415B2Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cellsIBM·Filed 2005·Granted Aug 14, 2007·49 cites·10 claims
- 0273US7378678B2Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cellsIBM·Filed 2007·Granted May 27, 2008·3 cites·14 claims
- 0355US7541608B2Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cellsIBM·Filed 2008·Granted Jun 2, 2009·0 cites·6 claims
- 0452US7834384B2Simultaneous conditioning of a plurality of memory cells through series resistorsIBM·Filed 2008·Granted Nov 16, 2010·0 cites·17 claims
- 0545US2007235811A1Simultaneous conditioning of a plurality of memory cells through series resistorsIBM·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →