Inventor · disambiguated record
John L. Benjamin
Also filed as: BENJAMIN JOHN · BENJAMIN JOHN L · BENJAMIN JOHN LAWRENCE
12 granted patents·1 pending application·279 citations·filing 1985–2011
92Inventor score
Top patents by PatentIndex Score
13 records- 0194US6465325B2Process for depositing and planarizing BPSG for dense trench MOSFET applicationFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Oct 15, 2002·127 cites·17 claims
- 0290US8148749B2Trench-shielded semiconductor deviceGREBS THOMAS E·Filed 2009·Granted Apr 3, 2012·21 cites·34 claims
- 0377US8049276B2Reduced process sensitivity of electrode-semiconductor rectifiersFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Nov 1, 2011·6 cites·22 claims
- 0475US6080614AMethod of making a MOS-gated semiconductor device with a single diffusionINTERSIL CORP·Filed 1997·Granted Jun 27, 2000·44 cites·46 claims
- 0567US6054369ALifetime control for semiconductor devicesINTERSIL CORP·Filed 1997·Granted Apr 25, 2000·36 cites·26 claims
- 0663US6358825B1Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime controlFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Mar 19, 2002·13 cites·20 claims
- 0761US8492837B2Reduced process sensitivity of electrode-semiconductor rectifiersYEDINAK JOSEPH A·Filed 2011·Granted Jul 23, 2013·1 cites·22 claims
- 0851US8227855B2Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the sameYEDINAK JOSEPH·Filed 2009·Granted Jul 24, 2012·1 cites·35 claims
- 0949US7332750B1Power semiconductor device with improved unclamped inductive switching capability and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Feb 19, 2008·5 cites·17 claims
- 1047US4778776APassivation with a low oxygen interfaceGEN ELECTRIC·Filed 1986·Granted Oct 18, 1988·18 cites·6 claims
- 1145US2008210974A1High voltage LDMOSFAIRCHILD SEMICONDUCTOR·Filed 2008·Application pending·0 cites
- 1234US5877044AMethod of making MOS-gated semiconductor devicesHARRIS CORP·Filed 1997·Granted Mar 2, 1999·4 cites·5 claims
- 1328US4597822AMethod for making silicon wafersGEN ELECTRIC·Filed 1985·Granted Jul 1, 1986·3 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →