Inventor · disambiguated record
Tim Baldauf
Also filed as: BALDAUF TIM
7 granted patents·26 citations·filing 2011–2017
79Inventor score
Top patents by PatentIndex Score
7 records- 0189US8912606B2Integrated circuits having protruding source and drain regions and methods for forming integrated circuitsBALDAUF TIM·Filed 2012·Granted Dec 16, 2014·16 cites·14 claims
- 0276US8580643B2Threshold voltage adjustment in a Fin transistor by corner implantationBALDAUF TIM·Filed 2011·Granted Nov 12, 2013·4 cites·20 claims
- 0375US8835255B2Method of forming a semiconductor structure including a vertical nanowireGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 16, 2014·4 cites·20 claims
- 0471US10347760B2Reconfigurable nanowire field effect transistor, a nanowire array and an integrated circuit thereofUNIV DRESDEN TECH·Filed 2017·Granted Jul 9, 2019·2 cites·14 claims
- 0551US8916928B2Threshold voltage adjustment in a fin transistor by corner implantationGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 23, 2014·0 cites·17 claims
- 0647US9484407B2Methods of forming a nanowire transistor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 1, 2016·0 cites·19 claims
- 0737US8941187B2Strain engineering in three-dimensional transistors based on strained isolation materialBALDAUF TIM·Filed 2012·Granted Jan 27, 2015·0 cites·8 claims
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