Inventor · disambiguated record
Sarah A. Mctaggart
Also filed as: MCTAGGART SARAH · MCTAGGART SARAH A · MCTAGGART SARAH ANN
7 granted patents·4 pending applications·7 citations·filing 2013–2024
74Inventor score
Top patents by PatentIndex Score
11 records- 0189US12342555B1Bipolar transistorGLOBALFOUNDRIES US INC·Filed 2024·Granted Jun 24, 2025·1 cites·17 claims
- 0288US11362201B1Heterojunction bipolar transistors with undercut extrinsic base regionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
- 0386US10312356B1Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 4, 2019·4 cites·20 claims
- 0465US12464746B1Isolation stack for a bipolar transistor and related methodsGLOBALFOUNDRIES US INC·Filed 2024·Granted Nov 4, 2025·0 cites·17 claims
- 0559US2025393226A1Bipolar transistor structures with sloped base sidewalls and related methodsGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 0658US12230673B2Field-effect transistors having a gate electrode positioned inside a substrate recessGLOBALFOUNDRIES US INC·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 0756US2025120144A1Bipolar transistor structures with cavity below extrinsic base and methods to form sameGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 0855US11869941B2Vertical bipolar junction transistor and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Jan 9, 2024·0 cites·18 claims
- 0951US2024088157A1Semiconductor device structures isolated by porous semiconductor materialGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
- 1050US2023352570A1Bipolar junction transistorGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
- 1141US9577023B2Metal wires of a stacked inductorGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 21, 2017·0 cites·14 claims
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