Inventor · disambiguated record
Byong-Ju Kim
Also filed as: KIM BYONG MAN · KIM BYONG-JU
7 granted patents·4 pending applications·5 citations·filing 2004–2023
71Inventor score
Top patents by PatentIndex Score
11 records- 0176US9129857B2Semiconductor device including a first core pattern under a second core patternKIM BI-O·Filed 2012·Granted Sep 8, 2015·5 cites·20 claims
- 0257US2024357824A1Semiconductor memory device, method for fabricating the same and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0349US11171287B2Variable resistance memory device including silicon capping patternSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 9, 2021·0 cites·19 claims
- 0448US7790591B2Methods of manufacturing semiconductor devices including metal oxide layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 7, 2010·0 cites·9 claims
- 0546US7994003B2Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 9, 2011·0 cites·9 claims
- 0640US8440527B2Memory device and method of fabricating the sameYOO DONG-CHUL·Filed 2010·Granted May 14, 2013·0 cites·19 claims
- 0738US8410542B2Charge-trapping nonvolatile memory devices having gate structures therein with improved blocking layersYOO DONG-CHUL·Filed 2010·Granted Apr 2, 2013·0 cites·20 claims
- 0838US8294198B2Semiconductor integrated circuit device and method of fabricating the sameYOO DONG-CHUL·Filed 2010·Granted Oct 23, 2012·0 cites·15 claims
- 0936US2011159680A1Method of forming a dielectric layer and method of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 1033US2011300686A1Methods of Fabricating Non-Volatile Memory DevicesCHAE SOO-DOO·Filed 2011·Application pending·0 cites
- 1132US2005051805A1Nanotube transistor deviceFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →