Inventor · disambiguated record
Tammy Zheng
Also filed as: ZHENG TAMMY · ZHENG TAMMY D · ZHENG TAMMY DONGLEI
13 granted patents·3 pending applications·310 citations·filing 1998–2015
93Inventor score
Files withKONINKL PHILIPS ELECTRONICS NV6PHILIPS SEMICONDUCTORS INC4PHILIPS ELECTRONICS NA2VLSI TECHNOLOGY INC2BROADCOM CORP1
Top patents by PatentIndex Score
16 records- 0189US6323113B1Intelligent gate-level fill methods for reducing global pattern density effectsPHILIPS ELECTRONICS NA·Filed 1999·Granted Nov 27, 2001·106 cites·34 claims
- 0276US6475922B1Hard mask process to control etch profiles in a gate stackKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Nov 5, 2002·19 cites·20 claims
- 0373US6306755B1Method for endpoint detection during dry etch of submicron features in a semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Oct 23, 2001·44 cites·19 claims
- 0464US6255226B1Optimized metal etch process to enable the use of aluminum plugsPHILIPS SEMICONDUCTOR INC·Filed 1998·Granted Jul 3, 2001·26 cites·24 claims
- 0563US6342428B1Method for a consistent shallow trench etch profilePHILIPS ELECTRONICS NA·Filed 1999·Granted Jan 29, 2002·28 cites·25 claims
- 0658US6251747B1Use of an insulating spacer to prevent threshold voltage roll-off in narrow devicesPHILIPS SEMICONDUCTORS INC·Filed 1999·Granted Jun 26, 2001·23 cites·15 claims
- 0756US6605543B1Process to control etch profiles in dual-implanted silicon filmsKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Aug 12, 2003·16 cites·13 claims
- 0854US6541359B1Optimized gate implants for reducing dopant effects during gate etchingKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Apr 1, 2003·6 cites·20 claims
- 0952US6399432B1Process to control poly silicon profiles in a dual doped poly silicon processPHILIPS SEMICONDUCTORS INC·Filed 1998·Granted Jun 4, 2002·13 cites·22 claims
- 1050US6060376AIntegrated etch process for polysilicon/metal gateVLSI TECHNOLOGY INC·Filed 1998·Granted May 9, 2000·16 cites·17 claims
- 1142US6228757B1Process for forming metal interconnects with reduced or eliminated metal recess in viasPHILIPS SEMICONDUCTORS INC·Filed 1998·Granted May 8, 2001·9 cites·23 claims
- 1238US2001017416A1Device having metal interconnects with reduced or eliminated metal recess in viasVLSI TECHNOLOGY INC·Filed 2001·Application pending·0 cites
- 1338US2001012690A1Optimized metal etch process to enable the use of aluminum plugsPHILIPS SEMICONDUCTORS INC·Filed 2001·Application pending·0 cites
- 1436US6822291B2Optimized gate implants for reducing dopant effects during gate etchingKONINKL PHILIPS ELECTRONICS NV·Filed 2003·Granted Nov 23, 2004·0 cites·16 claims
- 1534US6794294B1Etch process that resists notching at electrode bottomKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Sep 21, 2004·4 cites·2 claims
- 1633US2016161843A1Intelligent uniform masks for semiconductor fabricationBROADCOM CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →