Inventor · disambiguated record
Martin M. Frank
Also filed as: FRANK MARTIN · FRANK MARTIN M · FRANK MARTIN MICHAEL
118 granted patents·26 pending applications·762 citations·filing 2002–2024
99Inventor score
Top patents by PatentIndex Score
144 records- 0198US9793397B1Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistorIBM·Filed 2016·Granted Oct 17, 2017·31 cites·16 claims
- 0297US9362282B1High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor materialIBM·Filed 2015·Granted Jun 7, 2016·16 cites·11 claims
- 0397US8178382B2Suspended germanium photodetector for silicon waveguideASSEFA SOLOMON·Filed 2011·Granted May 15, 2012·37 cites·7 claims
- 0497US7105889B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2004·Granted Sep 12, 2006·93 cites·26 claims
- 0596US7718496B2Techniques for enabling multiple Vt devices using high-K metal gate stacksIBM·Filed 2007·Granted May 18, 2010·32 cites·5 claims
- 0695US9466492B2Method of lateral oxidation of NFET and PFET high-K gate stacksIBM·Filed 2015·Granted Oct 11, 2016·9 cites·11 claims
- 0795US7902620B2Suspended germanium photodetector for silicon waveguideIBM·Filed 2008·Granted Mar 8, 2011·24 cites·13 claims
- 0894US8212322B2Techniques for enabling multiple Vt devices using high-K metal gate stacksFRANK MARTIN M·Filed 2010·Granted Jul 3, 2012·16 cites·18 claims
- 0994US7989902B2Scavenging metal stack for a high-k gate dielectricIBM·Filed 2009·Granted Aug 2, 2011·28 cites·25 claims
- 1094US7838908B2Semiconductor device having dual metal gates and method of manufactureIBM·Filed 2009·Granted Nov 23, 2010·28 cites·14 claims
- 1193US11121139B2Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodesIBM·Filed 2017·Granted Sep 14, 2021·7 cites·16 claims
- 1293US9105745B2Fabrication of low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type MOSFETIBM·Filed 2012·Granted Aug 11, 2015·13 cites·10 claims
- 1393US8802527B1Gate electrode optimized for low voltage operationIBM·Filed 2013·Granted Aug 12, 2014·14 cites·16 claims
- 1492US10062694B2Patterned gate dielectrics for III-V-based CMOS circuitsIBM·Filed 2017·Granted Aug 28, 2018·5 cites·12 claims
- 1592US8420474B1Controlling threshold voltage in carbon based field effect transistorsFRANK MARTIN M·Filed 2012·Granted Apr 16, 2013·15 cites·23 claims
- 1692US8367496B2Scavanging metal stack for a high-k gate dielectricIBM·Filed 2011·Granted Feb 5, 2013·13 cites·20 claims
- 1792US7452767B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2006·Granted Nov 18, 2008·15 cites·4 claims
- 1891US8785995B2Ferroelectric semiconductor transistor devices having gate modulated conductive layerDUBOURDIEU CATHERINE A·Filed 2011·Granted Jul 22, 2014·17 cites·23 claims
- 1991US8193051B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsBOJARCZUK JR NESTOR A·Filed 2011·Granted Jun 5, 2012·14 cites·11 claims
- 2091US7928514B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2009·Granted Apr 19, 2011·12 cites·16 claims
- 2191US7655994B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2005·Granted Feb 2, 2010·21 cites·19 claims
- 2290US7479683B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2004·Granted Jan 20, 2009·35 cites·17 claims
- 2390US7242055B2Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxideIBM·Filed 2004·Granted Jul 10, 2007·51 cites·34 claims
- 2489US10468432B1BEOL cross-bar array ferroelectric synapse units for domain wall movementIBM·Filed 2018·Granted Nov 5, 2019·7 cites·20 claims
- 2589US7745278B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectricsIBM·Filed 2008·Granted Jun 29, 2010·10 cites·22 claims
- 2688US10319818B2Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-endIBM·Filed 2017·Granted Jun 11, 2019·4 cites·10 claims
- 2788US7868410B2Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flowIBM·Filed 2008·Granted Jan 11, 2011·13 cites·7 claims
- 2888US7858500B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2008·Granted Dec 28, 2010·12 cites·20 claims
- 2987US11508438B1RRAM filament location based on NIR emissionIBM·Filed 2020·Granted Nov 22, 2022·2 cites·20 claims
- 3087US10833150B2Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structuresIBM·Filed 2018·Granted Nov 10, 2020·4 cites·14 claims
- 3187US8680623B2Techniques for enabling multiple Vt devices using high-K metal gate stacksFRANK MARTIN M·Filed 2012·Granted Mar 25, 2014·7 cites·14 claims
- 3286US10141333B1Domain wall control in ferroelectric devicesIBM·Filed 2017·Granted Nov 27, 2018·4 cites·20 claims
- 3386US8836037B2Structure and method to form input/output devicesANDO TAKASHI·Filed 2012·Granted Sep 16, 2014·7 cites·20 claims
- 3485US10170550B2Stressed nanowire stack for field effect transistorIBM·Filed 2016·Granted Jan 1, 2019·3 cites·18 claims
- 3585US10109336B1Domain wall control in ferroelectric devicesIBM·Filed 2017·Granted Oct 23, 2018·4 cites·20 claims
- 3685US9299799B2Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structureIBM·Filed 2014·Granted Mar 29, 2016·6 cites·10 claims
- 3785US7521376B2Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatmentIBM·Filed 2005·Granted Apr 21, 2009·10 cites·9 claims
- 3885US7368045B2Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flowIBM·Filed 2005·Granted May 6, 2008·10 cites·39 claims
- 3983US11081343B2Sub-stoichiometric metal-oxide thin filmsIBM·Filed 2019·Granted Aug 3, 2021·2 cites·6 claims
- 4083US8778759B1Gate electrode optimized for low voltage operationIBM·Filed 2013·Granted Jul 15, 2014·5 cites·9 claims
- 4182US12114581B2Magnesium ion based synaptic deviceIBM·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 4282US10062693B2Patterned gate dielectrics for III-V-based CMOS circuitsIBM·Filed 2016·Granted Aug 28, 2018·2 cites·12 claims
- 4382US10002871B2High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor materialIBM·Filed 2017·Granted Jun 19, 2018·2 cites·19 claims
- 4482US9041082B2Engineering multiple threshold voltages in an integrated circuitDUBOURDIEU CATHERINE ANNE·Filed 2010·Granted May 26, 2015·8 cites·9 claims
- 4581US10686039B2Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-endIBM·Filed 2019·Granted Jun 16, 2020·2 cites·18 claims
- 4681US10672671B2Distinct gate stacks for III-V-based CMOS circuits comprising a channel capIBM·Filed 2017·Granted Jun 2, 2020·2 cites·15 claims
- 4780US10541151B1Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabricationIBM·Filed 2018·Granted Jan 21, 2020·2 cites·16 claims
- 4879US9564505B2Changing effective work function using ion implantation during dual work function metal gate integrationGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 7, 2017·4 cites·6 claims
- 4979US9166014B2Gate electrode with stabilized metal semiconductor alloy-semiconductor stackIBM·Filed 2013·Granted Oct 20, 2015·4 cites·13 claims
- 5078US10672881B2Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistorIBM·Filed 2017·Granted Jun 2, 2020·2 cites·17 claims
Showing the top 50 of 144 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →