Inventor · disambiguated record
Hsien-Chin Lin
Also filed as: LIN HSIEN-CHIN
30 granted patents·2 pending applications·350 citations·filing 1993–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD14TAIWAN SEMICONDUCTOR MFG10LIN CHIA-PIN2CHEN JIAN-HAO1GAN TIAN-CHOY1
Top patents by PatentIndex Score
32 records- 0197US10319581B1Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·14 cites·20 claims
- 0296US8426923B2Multiple-gate semiconductor device and methodLEE TUNG YING·Filed 2010·Granted Apr 23, 2013·31 cites·20 claims
- 0393US8609495B2Hybrid gate process for fabricating finfet deviceGAN TIAN-CHOY·Filed 2010·Granted Dec 17, 2013·38 cites·20 claims
- 0491US6444544B1Method of forming an aluminum protection guard structure for a copper metal structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 3, 2002·76 cites·23 claims
- 0590US9312179B2Method of making a finFET, and finFET formed by the methodLIN CHIA-PIN·Filed 2010·Granted Apr 12, 2016·11 cites·20 claims
- 0690US2025308882A1Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0789US9362404B2Doping for FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·8 cites·18 claims
- 0888US8994116B2Hybrid gate process for fabricating FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 31, 2015·10 cites·20 claims
- 0988US6380021B1Ultra-shallow junction formation by novel process sequence for PMOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·49 cites·19 claims
- 1087US8895383B2Multiple-gate semiconductor device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 25, 2014·7 cites·20 claims
- 1187US8034677B2Integrated method for forming high-k metal gate FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Oct 11, 2011·9 cites·19 claims
- 1286US12374542B2Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 1386US9373704B2Multiple-gate semiconductor device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 21, 2016·6 cites·20 claims
- 1485US6235600B1Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a teos liner depositionTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 22, 2001·29 cites·23 claims
- 1580US11721544B2Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
- 1679US10224245B2Method of making a finFET, and finFET formed by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 5, 2019·2 cites·20 claims
- 1778US9659776B2Doping for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·2 cites·20 claims
- 1877US6362035B1Channel stop ion implantation method for CMOS integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 26, 2002·26 cites·20 claims
- 1973US11239072B2Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 2073US10868003B2Creating devices with multiple threshold voltages by cut-metal-gate processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 2173US9070624B2Semiconductor device including polysilicon resistor and metal gate resistor and methods of fabricating thereofCHEN JIAN-HAO·Filed 2011·Granted Jun 30, 2015·4 cites·18 claims
- 2272US10978351B2Etch stop layer between substrate and isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 13, 2021·1 cites·20 claims
- 2371US11948842B2Etch stop layer between substrate and isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 2471US10461078B2Creating devices with multiple threshold voltage by cut-metal-gate processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·1 cites·20 claims
- 2566US10651030B2Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·0 cites·20 claims
- 2663US10991628B2Etch stop layer between substrate and isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 2763US10515856B2Method of making a FinFET, and FinFET formed by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·0 cites·20 claims
- 2860US8796095B2Integrated method for forming metal gate FinFET devicesLIN CHIA-PIN·Filed 2011·Granted Aug 5, 2014·1 cites·18 claims
- 2953US5281492ACover device of a storage batteryZTONG YEE IND CO LTD·Filed 1993·Granted Jan 25, 1994·23 cites·5 claims
- 3047USRE40138EMethod for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a Teos liner depositionTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 4, 2008·1 cites·37 claims
- 3137US2006014351A1Low leakage MOS transistorLO CHENG-YAO·Filed 2004·Application pending·0 cites
- 3230US9349657B2Fabrication methods of integrated semiconductor structureWANG SHENG-HSIUNG·Filed 2011·Granted May 24, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →