Inventor · disambiguated record
Ted Guo
Also filed as: GUO TED · GUO TED TIE
38 granted patents·1 pending application·1,541 citations·filing 1995–2025
98Inventor score
Files withAPPLIED MATERIALS INC34ADVANCED SOLAR TECH INSTITUTE XUANCHENG2ALLEN ADOLPH MILLER1LEE WEI TI1
Top patents by PatentIndex Score
39 records- 0198US6656831B1Plasma-enhanced chemical vapor deposition of a metal nitride layerAPPLIED MATERIALS INC·Filed 2000·Granted Dec 2, 2003·275 cites·28 claims
- 0294US5989623ADual damascene metallizationAPPLIED MATERIALS INC·Filed 1997·Granted Nov 23, 1999·146 cites·26 claims
- 0392US6207222B1Dual damascene metallizationAPPLIED MATERIALS INC·Filed 1999·Granted Mar 27, 2001·120 cites·6 claims
- 0491US7867900B2Aluminum contact integration on cobalt silicide junctionAPPLIED MATERIALS INC·Filed 2008·Granted Jan 11, 2011·18 cites·5 claims
- 0591US7824743B2Deposition processes for titanium nitride barrier and aluminumAPPLIED MATERIALS INC·Filed 2007·Granted Nov 2, 2010·24 cites·38 claims
- 0691US6139697ALow temperature integrated via and trench fill process and apparatusAPPLIED MATERIALS INC·Filed 1997·Granted Oct 31, 2000·117 cites·18 claims
- 0790US7186319B2Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetryAPPLIED MATERIALS INC·Filed 2005·Granted Mar 6, 2007·15 cites·21 claims
- 0890US6458684B1Single step process for blanket-selective CVD aluminum depositionAPPLIED MATERIALS INC·Filed 2000·Granted Oct 1, 2002·42 cites·20 claims
- 0989US6001420ASemi-selective chemical vapor depositionAPPLIED MATERIALS INC·Filed 1996·Granted Dec 14, 1999·92 cites·25 claims
- 1087US5877087ALow temperature integrated metallization process and apparatusAPPLIED MATERIALS INC·Filed 1995·Granted Mar 2, 1999·69 cites·11 claims
- 1186US5763010AThermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layersAPPLIED MATERIALS INC·Filed 1996·Granted Jun 9, 1998·61 cites·18 claims
- 1285US7378002B2Aluminum sputtering while biasing waferAPPLIED MATERIALS INC·Filed 2005·Granted May 27, 2008·6 cites·17 claims
- 1384US7857947B2Unique passivation technique for a CVD blocker plate to prevent particle formationAPPLIED MATERIALS INC·Filed 2006·Granted Dec 28, 2010·4 cites·17 claims
- 1482US6528180B1Liner materialsAPPLIED MATERIALS INC·Filed 2000·Granted Mar 4, 2003·26 cites·12 claims
- 1581US6169030B1Metallization process and methodAPPLIED MATERIALS INC·Filed 1998·Granted Jan 2, 2001·57 cites·25 claims
- 1681US6066358ABlanket-selective chemical vapor deposition using an ultra-thin nucleation layerAPPLIED MATERIALS INC·Filed 1996·Granted May 23, 2000·62 cites·16 claims
- 1780US6120844ADeposition film orientation and reflectivity improvement using a self-aligning ultra-thin layerAPPLIED MATERIALS INC·Filed 1996·Granted Sep 19, 2000·57 cites·18 claims
- 1877US6017144AMethod and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layerAPPLIED MATERIALS INC·Filed 1996·Granted Jan 25, 2000·50 cites·32 claims
- 1976US6110828AIn-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallizationAPPLIED MATERIALS INC·Filed 1996·Granted Aug 29, 2000·50 cites·22 claims
- 2072US6080665AIntegrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminumAPPLIED MATERIALS INC·Filed 1997·Granted Jun 27, 2000·39 cites·28 claims
- 2171US6537905B1Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plugAPPLIED MATERIALS INC·Filed 1996·Granted Mar 25, 2003·37 cites·25 claims
- 2270US9593417B2Gas line weldment design and process for CVD aluminumAPPLIED MATERIALS INC·Filed 2013·Granted Mar 14, 2017·0 cites·5 claims
- 2369US7112528B2Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plugAPPLIED MATERIALS INC·Filed 2003·Granted Sep 26, 2006·14 cites·8 claims
- 2468US6716733B2CVD-PVD deposition processAPPLIED MATERIALS INC·Filed 2002·Granted Apr 6, 2004·11 cites·45 claims
- 2566US8535443B2Gas line weldment design and process for CVD aluminumLEE WEI TI·Filed 2006·Granted Sep 17, 2013·3 cites·14 claims
- 2663US5956608AModulating surface morphology of barrier layersAPPLIED MATERIALS INC·Filed 1996·Granted Sep 21, 1999·29 cites·13 claims
- 2762US6509274B1Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrateAPPLIED MATERIALS INC·Filed 2000·Granted Jan 21, 2003·11 cites·12 claims
- 2861US8968536B2Sputtering target having increased life and sputtering uniformityALLEN ADOLPH MILLER·Filed 2007·Granted Mar 3, 2015·3 cites·35 claims
- 2960US6139905AIntegrated CVD/PVD Al planarization using ultra-thin nucleation layersAPPLIED MATERIALS INC·Filed 1997·Granted Oct 31, 2000·24 cites·19 claims
- 3057US6430458B1Semi-selective chemical vapor depositionAPPLIED MATERIALS INC·Filed 1999·Granted Aug 6, 2002·18 cites·20 claims
- 3155US12238946B2Perovskite/silicon heterojunction tandem solar cell and preparation method thereofADVANCED SOLAR TECH INSTITUTE XUANCHENG·Filed 2023·Granted Feb 25, 2025·0 cites·4 claims
- 3253US2025160104A1Preparation method of perovskite/silicon heterojunction tandem solar cellADVANCED SOLAR TECH INSTITUTE XUANCHENG·Filed 2025·Application pending·0 cites
- 3352US6743714B2Low temperature integrated metallization process and apparatusAPPLIED MATERIALS INC·Filed 2002·Granted Jun 1, 2004·2 cites·8 claims
- 3452US6355560B1Low temperature integrated metallization process and apparatusAPPLIED MATERIALS INC·Filed 1998·Granted Mar 12, 2002·12 cites·16 claims
- 3549US6077781ASingle step process for blanket-selective CVD aluminum depositionAPPLIED MATERIALS INC·Filed 1996·Granted Jun 20, 2000·12 cites·19 claims
- 3642US6726776B1Low temperature integrated metallization process and apparatusAPPLIED MATERIALS INC·Filed 1999·Granted Apr 27, 2004·9 cites·42 claims
- 3738US6079354AThermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layersAPPLIED MATERIALS INC·Filed 1998·Granted Jun 27, 2000·20 cites·26 claims
- 3837US6518176B2Method of selective formation of a barrier layer for a contact level viaFiled 1998·Granted Feb 11, 2003·5 cites·23 claims
- 3931US6605531B1Hole-filling technique using CVD aluminum and PVD aluminum integrationAPPLIED MATERIALS INC·Filed 1998·Granted Aug 12, 2003·1 cites·28 claims
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