Inventor · disambiguated record
Shin-Ae Lee
Also filed as: LEE SHIN-AE
21 granted patents·2 pending applications·382 citations·filing 2003–2017
96Inventor score
Top patents by PatentIndex Score
23 records- 0196US7615429B2Methods of fabricating field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 10, 2009·39 cites·20 claims
- 0295US7002207B2Field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 21, 2006·74 cites·34 claims
- 0394US7026688B2Field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 11, 2006·22 cites·17 claims
- 0492US7148527B2Semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 12, 2006·54 cites·19 claims
- 0588US7397131B2Self-aligned semiconductor contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·12 cites·17 claims
- 0686US7132349B2Methods of forming integrated circuits structures including epitaxial silicon layers in active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 7, 2006·9 cites·13 claims
- 0785US7473963B2Metal oxide semiconductor (MOS) transistors having three dimensional channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 6, 2009·8 cites·16 claims
- 0885US7285466B2Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channelsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 23, 2007·28 cites·31 claims
- 0985US7071517B2Self-aligned semiconductor contact structures and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 4, 2006·28 cites·12 claims
- 1084US7381601B2Methods of fabricating field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 3, 2008·24 cites·38 claims
- 1178US7122431B2Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·20 cites·18 claims
- 1275US6940129B2Double gate MOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 6, 2005·20 cites·20 claims
- 1374US7541656B2Semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·4 cites·12 claims
- 1474US7015549B2Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 21, 2006·13 cites·9 claims
- 1572US7541645B2Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·4 cites·9 claims
- 1671US7129541B2Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 31, 2006·13 cites·18 claims
- 1761US7154154B2MOS transistors having inverted T-shaped gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 26, 2006·8 cites·11 claims
- 1854US7871914B2Methods of fabricating semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·0 cites·13 claims
- 1947US7534707B2MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·0 cites·25 claims
- 2047US6875666B2Methods of manufacturing transistors and transistors having an anti-punchthrough regionSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 5, 2005·2 cites·20 claims
- 2146US10696296B2Vehicle control apparatus and method for controlling vehicleMANDO CORP·Filed 2017·Granted Jun 30, 2020·0 cites·15 claims
- 2246US2006170062A1Self-aligned semiconductor contact structures and methods for fabricating the sameKIM SEONG-HO·Filed 2006·Application pending·0 cites
- 2336US2005077553A1Methods of forming multi fin FETs using sacrificial fins and devices so formedFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →