Inventor · disambiguated record
Chang-Sub Lee
Also filed as: LEE CHANG-SUB
51 granted patents·17 pending applications·835 citations·filing 1995–2022
98Inventor score
Top patents by PatentIndex Score
68 records- 0199US7834861B2Mobile communication terminal and method of selecting menu and itemLG ELECTRONICS INC·Filed 2007·Granted Nov 16, 2010·166 cites·9 claims
- 0296US7615429B2Methods of fabricating field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 10, 2009·39 cites·20 claims
- 0395US7002207B2Field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 21, 2006·74 cites·34 claims
- 0494US7026688B2Field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 11, 2006·22 cites·17 claims
- 0593US8456918B2NAND flash memory device and method of operating same to reduce a difference between channel potentials thereinOH DONG-YEAN·Filed 2009·Granted Jun 4, 2013·39 cites·12 claims
- 0692US8477112B2Mobile communication terminal and method of selecting menu and itemLEE CHANG SUB·Filed 2012·Granted Jul 2, 2013·12 cites·24 claims
- 0792US7148527B2Semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 12, 2006·54 cites·19 claims
- 0891US7741143B2Image sensor having 3-dimensional transfer transistor and its method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 22, 2010·14 cites·13 claims
- 0991US6862214B2Phase change memory arraySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 1, 2005·59 cites·27 claims
- 1088US7397131B2Self-aligned semiconductor contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·12 cites·17 claims
- 1187US7326975B2Buried channel type transistor having a trench gate and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 5, 2008·10 cites·17 claims
- 1286US7132349B2Methods of forming integrated circuits structures including epitaxial silicon layers in active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 7, 2006·9 cites·13 claims
- 1385US9230420B2Method and system for implementing alarms for medical device through mobile deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 5, 2016·24 cites·32 claims
- 1485US8120590B2Mobile communication terminal and method of selecting menu and itemLEE CHANG SUB·Filed 2010·Granted Feb 21, 2012·6 cites·22 claims
- 1585US7071517B2Self-aligned semiconductor contact structures and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 4, 2006·28 cites·12 claims
- 1684US7381601B2Methods of fabricating field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 3, 2008·24 cites·38 claims
- 1781US8279192B2Mobile communication terminal and method of selecting menu and itemLEE CHANG SUB·Filed 2012·Granted Oct 2, 2012·4 cites·20 claims
- 1880US9824759B2Non-volatile memory devices, memory systems, and methods of operating the sameKWON DAE-WOONG·Filed 2015·Granted Nov 21, 2017·7 cites·18 claims
- 1980US6842028B2Apparatus for testing reliability of interconnection in integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 11, 2005·21 cites·12 claims
- 2076US10404784B2Method and system for transmitting result of examination of specimen from medical device to destinationSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 3, 2019·2 cites·24 claims
- 2176US7787306B2Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·9 cites·6 claims
- 2275US7323746B2Recess gate-type semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 29, 2008·7 cites·16 claims
- 2375US6940129B2Double gate MOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 6, 2005·20 cites·20 claims
- 2474US7541656B2Semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 2, 2009·4 cites·12 claims
- 2574US7015549B2Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 21, 2006·13 cites·9 claims
- 2674US6693446B2Apparatus for testing reliability of interconnection in integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 17, 2004·18 cites·15 claims
- 2772US7060574B2Buried channel type transistor having a trench gate and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 13, 2006·12 cites·14 claims
- 2871US7883969B2Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·2 cites·18 claims
- 2971US7462544B2Methods for fabricating transistors having trench gatesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 9, 2008·4 cites·37 claims
- 3070US8324052B2Methods of fabricating non-volatile memory devices including double diffused junction regionsOH DONG-YEAN·Filed 2011·Granted Dec 4, 2012·2 cites·12 claims
- 3170US6567175B1Device and method for changing printer drivers in a computer-printer systemSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted May 20, 2003·57 cites·17 claims
- 3265US7494871B2Semiconductor memory devices and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·2 cites·14 claims
- 3363US7898039B2Non-volatile memory devices including double diffused junction regionsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 1, 2011·1 cites·19 claims
- 3462US8879170B2Condensing lens and lighting device equipped with said condensing lensLEE CHANG MO·Filed 2012·Granted Nov 4, 2014·2 cites·9 claims
- 3561US7154154B2MOS transistors having inverted T-shaped gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 26, 2006·8 cites·11 claims
- 3659US12069130B2Media clock recovery device and a method for recovering media clock, and an electronic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 3759US8866376B2Light emitting device package and manufacturing method thereofLEE DONG YEOUL·Filed 2012·Granted Oct 21, 2014·2 cites·9 claims
- 3859US6951785B2Methods of forming field effect transistors including raised source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 4, 2005·6 cites·27 claims
- 3958US6307639B1Data transmission/reception device using an electrophotographic development process and a method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Oct 23, 2001·22 cites·22 claims
- 4057US7037768B2Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·5 cites·20 claims
- 4157US2010207170A1Image sensor having 3-dimensional transfer transistor and its method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4256US10411794B2Method and system for transmitting result of examination of specimen from medical device to destination through mobile deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 10, 2019·0 cites·35 claims
- 4354US7871914B2Methods of fabricating semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·0 cites·13 claims
- 4451US10109170B2Method and system for implementing alarms for medical device through mobile deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 23, 2018·0 cites·17 claims
- 4551US2009127635A1Transistor including an active region and methods for fabricating the sameKIM JI-YOUNG·Filed 2008·Application pending·0 cites
- 4650US6690187B2Apparatus for testing reliability of interconnection in integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 10, 2004·4 cites·6 claims
- 4749US9072124B2Apparatus for and method of controlling dimming of street lampLEE SANG-HUN·Filed 2012·Granted Jun 30, 2015·0 cites·9 claims
- 4849US2011079831A1Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Including Recessed Channel RegionsOH CHANG-WOO·Filed 2010·Application pending·0 cites
- 4948US2018303065A1Defecation training device and method for companion animalLEE CHANG SUB·Filed 2016·Application pending·0 cites
- 5047US7534707B2MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·0 cites·25 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →