Inventor · disambiguated record
Klaus-Dieter Ufert
Also filed as: UFERT KLAUS · UFERT KLAUS DIETER
28 granted patents·16 pending applications·322 citations·filing 1995–2010
96Inventor score
Files withINFINEON TECHNOLOGIES AG17QIMONDA AG8UFERT KLAUS-DIETER7UFERT KLAUS5ADESTO TECHNOLOGY CORP1
Top patents by PatentIndex Score
44 records- 0197US7749805B2Method for manufacturing an integrated circuit including an electrolyte material layerQIMONDA AG·Filed 2005·Granted Jul 6, 2010·71 cites·26 claims
- 0296US7368314B2Method for fabricating a resistive memoryINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 6, 2008·48 cites·20 claims
- 0392US7894253B2Carbon filament memory and fabrication methodQIMONDA AG·Filed 2007·Granted Feb 22, 2011·24 cites·44 claims
- 0491US7297975B2Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the sameINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 20, 2007·24 cites·6 claims
- 0586US8030637B2Memory element using reversible switching between SP2 and SP3 hybridized carbonQIMONDA AG·Filed 2006·Granted Oct 4, 2011·13 cites·24 claims
- 0685US7483293B2Method for improving the thermal characteristics of semiconductor memory cellsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 27, 2009·17 cites·19 claims
- 0781US7718537B2Method for manufacturing a CBRAM semiconductor memoryQIMONDA AG·Filed 2005·Granted May 18, 2010·10 cites·23 claims
- 0879US8063394B2Integrated circuitANDRES DIETER·Filed 2008·Granted Nov 22, 2011·12 cites·9 claims
- 0975US7312491B2Charge trapping semiconductor memory element with improved trapping dielectricINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 25, 2007·6 cites·12 claims
- 1074US7787279B2Integrated circuit having a resistive memoryQIMONDA AG·Filed 2006·Granted Aug 31, 2010·6 cites·13 claims
- 1174US7649242B2Programmable resistive memory cell with a programmable resistance layerINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jan 19, 2010·6 cites·22 claims
- 1274US7511294B2Resistive memory element with shortened erase timeINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 31, 2009·6 cites·19 claims
- 1373US7983068B2Memory element with positive temperature coefficient layerQIMONDA AG·Filed 2008·Granted Jul 19, 2011·8 cites·19 claims
- 1473US7358520B2Semiconductor memory cell, method for fabricating it and semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 15, 2008·6 cites·15 claims
- 1571US7410868B2Method for fabricating a nonvolatile memory element and a nonvolatile memory elementINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 12, 2008·3 cites·9 claims
- 1670US7741630B2Resistive memory element and method of fabricationQIMONDA AG·Filed 2008·Granted Jun 22, 2010·3 cites·14 claims
- 1769US7345295B2Semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 18, 2008·4 cites·14 claims
- 1868US5558723AThin-film solar module with electrically conductive substrate and method for the manufacture thereofSIEMENS SOLAR GMBH·Filed 1995·Granted Sep 24, 1996·35 cites·7 claims
- 1965US7829134B2Method for producing memory having a solid electrolyte material regionADESTO TECHNOLOGY CORP·Filed 2005·Granted Nov 9, 2010·5 cites·19 claims
- 2064US8062694B2Method for producing memory having a solid electrolyte material regionPINNOW CAY-UWE·Filed 2010·Granted Nov 22, 2011·3 cites·20 claims
- 2160US7881092B2Increased switching cycle resistive memory elementRISING SILICON INC·Filed 2007·Granted Feb 1, 2011·4 cites·27 claims
- 2256US7655939B2Memory cell, memory device and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 2, 2010·3 cites·34 claims
- 2356US7538411B2Integrated circuit including resistivity changing memory cellsINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 26, 2009·3 cites·18 claims
- 2455US8038850B2Sputter deposition method for forming integrated circuitQIMONDA AG·Filed 2006·Granted Oct 18, 2011·0 cites·42 claims
- 2550US7442605B2Resistively switching memoryINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 28, 2008·2 cites·22 claims
- 2648US8492810B2Method of fabricating an integrated electronic circuit with programmable resistance cellsRABERG WOLFGANG·Filed 2006·Granted Jul 23, 2013·0 cites·20 claims
- 2747US2009272958A1Resistive MemoryUFERT KLAUS-DIETER·Filed 2008·Application pending·0 cites
- 2846US2009140232A1Resistive Memory ElementUFERT KLAUS-DIETER·Filed 2007·Application pending·0 cites
- 2945US2008278988A1Resistive switching elementUFERT KLAUS·Filed 2007·Application pending·0 cites
- 3044US7265381B2Opto-electronic memory element on the basis of organic metalloporphyrin moleculesINFINEON TECHNOLOGIES AG·Filed 2004·Granted Sep 4, 2007·0 cites·14 claims
- 3144US2007267621A1Resistive memory deviceINFINEON TECHNOLOGIES AG·Filed 2006·Application pending·0 cites
- 3244US2006151780A1Hybrid silicon-molecular memory cell with high storage densityUFERT KLAUS-DIETER·Filed 2005·Application pending·0 cites
- 3343US2009045387A1Resistively switching semiconductor memoryUFERT KLAUS-DIETER·Filed 2005·Application pending·0 cites
- 3442US2006170022A1Silicon molecular hybrid storage cellUFERT KLAUS·Filed 2005·Application pending·0 cites
- 3539US2008102278A1Carbon filament memory and method for fabricationKREUPL FRANZ·Filed 2006·Application pending·0 cites
- 3639US2006163643A1Double gate memory cell with improved tunnel oxideUFERT KLAUS-DIETER·Filed 2005·Application pending·0 cites
- 3737US7613028B2Solid electrolyte switching elementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 3, 2009·0 cites·28 claims
- 3836US2009200535A1Non-Volatile Memory Element with Improved Temperature StabilityUFERT KLAUS-DIETER·Filed 2008·Application pending·0 cites
- 3936US2008029803A1Programmable non-volatile memory cellINFINEON TECHNOLOGIES AG·Filed 2006·Application pending·0 cites
- 4035US2008247215A1Resistive switching elementUFERT KLAUS·Filed 2007·Application pending·0 cites
- 4135US2008247214A1Integrated memoryUFERT KLAUS·Filed 2007·Application pending·0 cites
- 4234US2006049390A1Resistively switching nonvolatile memory cell based on alkali metal ion driftUFERT KLAUS·Filed 2005·Application pending·0 cites
- 4334US2007274120A1CBRAM cell with a reversible conductive bridging mechanismINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 4434US2006175604A1Novel type of attachment of organic molecules to a silicon surface for producing memory elements having organic constituentsUFERT KLAUS-DIETER·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →