Inventor · disambiguated record
Richard Allen Faust
Also filed as: FAUST JR RICHARD A · FAUST RICHARD A · FAUST RICHARD ALLEN
12 granted patents·5 pending applications·49 citations·filing 2001–2019
88Inventor score
Top patents by PatentIndex Score
17 records- 0191US9455312B2Multiple depth vias in an integrated circuitTEXAS INSTRUMENTS INC·Filed 2015·Granted Sep 27, 2016·6 cites·16 claims
- 0268US6680249B2Si-rich surface layer capped diffusion barriersTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 20, 2004·14 cites·10 claims
- 0367US9082649B2Passivation process to prevent TiW corrosionTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 14, 2015·2 cites·12 claims
- 0466US8980723B2Multiple depth vias in an integrated circuitTEXAS INSTRUMENTS INC·Filed 2013·Granted Mar 17, 2015·1 cites·7 claims
- 0564US7655555B2In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliabilityTEXAS INSTRUMENTS INC·Filed 2001·Granted Feb 2, 2010·9 cites·11 claims
- 0662US6927159B2Methods for providing improved layer adhesion in a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 9, 2005·8 cites·3 claims
- 0760US8258041B2Method of fabricating metal-bearing integrated circuit structures having low defect densityRAGHAVAN SRINIVAS·Filed 2010·Granted Sep 4, 2012·2 cites·21 claims
- 0856US6720255B1Semiconductor device with silicon-carbon-oxygen dielectric having improved metal barrier adhesion and method of forming the deviceTEXAS INSTRUMENTS INC·Filed 2002·Granted Apr 13, 2004·7 cites·47 claims
- 0953US9230887B2Multiple depth vias in an integrated circuitTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 5, 2016·0 cites·3 claims
- 1044US2011053372A1Low Temperature Surface Preparation for Removal of Organometallic Polymers in the Manufacture of Integrated CircuitsTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 1144US2009170305A1Method for improving electromigration lifetime for cu interconnect systemsTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1242US12159846B2Process flow for fabrication of cap metal over top metal with sinter before protective dielectric etchTEXAS INSTRUMENTS INC·Filed 2019·Granted Dec 3, 2024·0 cites·19 claims
- 1340US2008111237A1Semiconductor device manufactured using an electrochemical deposition process for copper interconnectsTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 1439US7215000B2Selectively encased surface metal structures in a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2004·Granted May 8, 2007·0 cites·15 claims
- 1538US6958290B2Method and apparatus for improving adhesion between layers in integrated devicesTEXAS INSTRUMENTS INC·Filed 2002·Granted Oct 25, 2005·0 cites·24 claims
- 1632US2002072227A1Method for improving barrier properties of refractory metals/metal nitrides with a safer alternative to silaneFiled 2001·Application pending·0 cites
- 1729US2017345780A1Surface Conditioning And Material Modification In A Semiconductor DeviceTEXAS INSTRUMENTS INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →