Inventor · disambiguated record
Tatsuo Otsuki
Also filed as: OTSUKI TATSUO · OTSUKI TATSURO
22 granted patents·733 citations·filing 1986–2003
97Inventor score
Top patents by PatentIndex Score
22 records- 0197US6924997B2Ferroelectric memory and method of operating sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 2, 2005·198 cites·12 claims
- 0293US5624864ASemiconductor device having capacitor and manufacturing method thereofMATSUSHITA ELECTRONICS CORP·Filed 1994·Granted Apr 29, 1997·71 cites·1 claims
- 0390US6151241AFerroelectric memory with disturb protectionSYMETRIX CORP·Filed 1999·Granted Nov 21, 2000·83 cites·20 claims
- 0489US5759923AMethod and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuitsSYMETRIX CORP·Filed 1996·Granted Jun 2, 1998·102 cites·18 claims
- 0586US5780351ASemiconductor device having capacitor and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 14, 1998·41 cites·6 claims
- 0679US6469334B2Ferroelectric field effect transistorSYMETRIX CORP·Filed 2001·Granted Oct 22, 2002·20 cites·10 claims
- 0779US6104049AFerroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making sameSYMETRIX CORP·Filed 1999·Granted Aug 15, 2000·53 cites·11 claims
- 0876US6333528B1Semiconductor device having a capacitor exhibiting improved moisture resistanceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Dec 25, 2001·23 cites·2 claims
- 0972US6255121B1Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursorSYMETRIX CORP·Filed 1999·Granted Jul 3, 2001·27 cites·27 claims
- 1070US6440754B2Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structuresMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 27, 2002·14 cites·7 claims
- 1166US6169304B1Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jan 2, 2001·15 cites·2 claims
- 1263US6294438B1Semiconductor device having capacitor and manufacturing method thereofMATSUSHITA ELECTRONICS CORP·Filed 2000·Granted Sep 25, 2001·6 cites·4 claims
- 1362US4712023ABuffered FET logic gate using depletion-mode MESFET's.MATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1986·Granted Dec 8, 1987·15 cites·18 claims
- 1457US6876030B2Semiconductor memory deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 5, 2005·7 cites·13 claims
- 1556US6015987ASemiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jan 18, 2000·9 cites·3 claims
- 1654US6653156B2Ferroelectric device with capping layer and method of making sameSYMETRIX CORP·Filed 2002·Granted Nov 25, 2003·3 cites·15 claims
- 1750USRE38565EThin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structuresMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 17, 2004·4 cites·8 claims
- 1850US6447838B1Integrated circuit capacitors with barrier layer and process for making the sameSYMETRIX CORP·Filed 1995·Granted Sep 10, 2002·15 cites·19 claims
- 1948US6107657ASemiconductor device having capacitor and manufacturing method thereofMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Aug 22, 2000·6 cites·2 claims
- 2047US5932281AMethod of manufacturing bi-layered ferroelectric thin filmMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Aug 3, 1999·15 cites·25 claims
- 2137US6265738B1Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structuresMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Jul 24, 2001·5 cites·22 claims
- 2232US6541806B2Ferroelectric device with capping layer and method of making sameSYMETRIX CORP·Filed 1999·Granted Apr 1, 2003·1 cites·15 claims
Join the waitlist — get patent alerts
Get an alert when Tatsuo Otsuki files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →