Inventor · disambiguated record
Peter Mcgrath
Also filed as: MCGRATH PETER · MCGRATH PETER G · MCGRATH PETER GERARD
11 granted patents·304 citations·filing 2001–2019
92Inventor score
Top patents by PatentIndex Score
11 records- 0194US6673200B1Method of reducing process plasma damage using optical spectroscopyLSI LOGIC CORP·Filed 2002·Granted Jan 6, 2004·101 cites·17 claims
- 0293US6972840B1Method of reducing process plasma damage using optical spectroscopyLSI LOGIC CORP·Filed 2003·Granted Dec 6, 2005·82 cites·8 claims
- 0386US9029215B2Method of making an insulated gate semiconductor device having a shield electrode structureHOSSAIN ZIA·Filed 2012·Granted May 12, 2015·8 cites·20 claims
- 0483US6743669B1Method of reducing leakage using Si3N4 or SiON block dielectric filmsLSI LOGIC CORP·Filed 2002·Granted Jun 1, 2004·33 cites·19 claims
- 0578US6551901B1Method for preventing borderless contact to well leakageLSI LOGIC CORP·Filed 2001·Granted Apr 22, 2003·24 cites·2 claims
- 0676US7538040B2Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafersNANTERO INC·Filed 2005·Granted May 26, 2009·4 cites·15 claims
- 0774US7098515B1Semiconductor chip with borderless contact that avoids well leakageLSI LOGIC CORP·Filed 2005·Granted Aug 29, 2006·10 cites·15 claims
- 0872US6893937B1Method for preventing borderless contact to well leakageLSI LOGIC CORP·Filed 2003·Granted May 17, 2005·17 cites·8 claims
- 0972US6794304B1Method and apparatus for reducing microtrenching for borderless vias created in a dual damascene processLSI LOGIC CORP·Filed 2003·Granted Sep 21, 2004·22 cites·20 claims
- 1069US11049956B2Method of forming a semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Jun 29, 2021·1 cites·20 claims
- 1169US7911034B2Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafersNANTERO INC·Filed 2009·Granted Mar 22, 2011·2 cites·16 claims
Join the waitlist — get patent alerts
Get an alert when Peter Mcgrath files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →