Inventor · disambiguated record
Fernando Gonzalez
Also filed as: GONAZLEZ FERNANDO · GONZALEZ FERNANDO · GONZALEZ FERNANDO N M · GONZALEZ FERNANDO N M I
314 granted patents·10 pending applications·15,243 citations·filing 1989–2014
99Inventor score
Files withMICRON TECHNOLOGY INC303GONZALEZ FERNANDO10MICRON SEMICONDUCTOR INC5DURCAN D MARK1MICRON TECHNOLOGY INCL1
Top patents by PatentIndex Score
324 records- 0199US6927431B2Semiconductor circuit constructionsMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 9, 2005·224 cites·5 claims
- 0299US6844243B1Methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 18, 2005·276 cites·16 claims
- 0399US6638834B2Methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 28, 2003·299 cites·16 claims
- 0499US6635552B1Methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 21, 2003·307 cites·16 claims
- 0599US6391688B1Method for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 2000·Granted May 21, 2002·336 cites·23 claims
- 0699US6376284B1Method of fabricating a memory deviceMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 23, 2002·365 cites·14 claims
- 0799US6236059B1Memory cell incorporating a chalcogenide element and method of making sameMICRON TECHNOLOGY INC·Filed 1997·Granted May 22, 2001·727 cites·7 claims
- 0899US6153890AMemory cell incorporating a chalcogenide elementMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 28, 2000·370 cites·7 claims
- 0999US6104038AMethod for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 15, 2000·350 cites·13 claims
- 1099US5998244AMemory cell incorporating a chalcogenide element and method of making sameMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 7, 1999·462 cites·19 claims
- 1199US5970336AMethod of making memory cell incorporating a chalcogenide elementMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 19, 1999·439 cites·26 claims
- 1299US5879955AMethod for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 1995·Granted Mar 9, 1999·468 cites·19 claims
- 1399US5831276AThree-dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 3, 1998·409 cites·30 claims
- 1498US6300684B1Method for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 9, 2001·220 cites·9 claims
- 1598US6111264ASmall pores defined by a disposable internal spacer for use in chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 29, 2000·417 cites·28 claims
- 1698US5985698AFabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 16, 1999·327 cites·19 claims
- 1798US5814527AMethod of making small pores defined by a disposable internal spacer for use in chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 29, 1998·560 cites·38 claims
- 1898US5122848AInsulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitanceMICRON TECHNOLOGY INC·Filed 1991·Granted Jun 16, 1992·263 cites·17 claims
- 1998US5013680AProcess for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithographyMICRON TECHNOLOGY INC·Filed 1990·Granted May 7, 1991·461 cites·21 claims
- 2097US6784076B2Process for making a silicon-on-insulator ledge by implanting ions from silicon sourceMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 31, 2004·109 cites·33 claims
- 2197US6383861B1Method of fabricating a dual gate dielectricMICRON TECHNOLOGY INC·Filed 1999·Granted May 7, 2002·158 cites·12 claims
- 2297US6369431B1Method for forming conductors in semiconductor devicesMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 9, 2002·91 cites·2 claims
- 2397US5424993AProgramming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory deviceMICRON TECHNOLOGY INC·Filed 1993·Granted Jun 13, 1995·146 cites·42 claims
- 2496US7179703B2Method of forming shallow doped junctions having a variable profile gradation of dopantsMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 20, 2007·26 cites·16 claims
- 2596US6159818AMethod of forming a container capacitor structureMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 12, 2000·88 cites·6 claims
- 2696US5250450AInsulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitanceMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 5, 1993·166 cites·19 claims
- 2795US6320201B1Semiconductor reliability test chipMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 20, 2001·76 cites·44 claims
- 2895US6291276B1Cross coupled thin film transistors and static random access memory cellMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 18, 2001·113 cites·14 claims
- 2995US6096596AVery high-density DRAM cell structure and method for fabricating itMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 1, 2000·102 cites·9 claims
- 3095US5753947AVery high-density DRAM cell structure and method for fabricating itMICRON TECHNOLOGY INC·Filed 1995·Granted May 19, 1998·124 cites·20 claims
- 3195US5640342AStructure for cross coupled thin film transistors and static random access memory cellMICRON TECHNOLOGY INC·Filed 1995·Granted Jun 17, 1997·105 cites·15 claims
- 3295US5168073AMethod for fabricating storage node capacitor having tungsten and etched tin storage node capacitor plateMICRON TECHNOLOGY INC·Filed 1991·Granted Dec 1, 1992·137 cites·24 claims
- 3394US7659152B2Localized biasing for silicon on insulator structuresMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 9, 2010·58 cites·40 claims
- 3494US6958519B2Methods of forming field effect transistors and field effect transistor circuitryMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 25, 2005·51 cites·34 claims
- 3594US6653733B1Conductors in semiconductor devicesMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 25, 2003·88 cites·1 claims
- 3694US5841150AStack/trench diode for use with a muti-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 24, 1998·363 cites·16 claims
- 3793US6700211B2Method for forming conductors in semiconductor devicesMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 2, 2004·44 cites·1 claims
- 3892US7919800B2Capacitor-less memory cells and cell arraysMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 5, 2011·15 cites·18 claims
- 3992US6787401B2Method of making vertical diode structuresMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 7, 2004·33 cites·23 claims
- 4092US6670713B2Method for forming conductors in semiconductor devicesMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 30, 2003·42 cites·4 claims
- 4192US6429449B1Three-dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 6, 2002·36 cites·50 claims
- 4292US6380103B2Rapid thermal etch and rapid thermal oxidationMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 30, 2002·47 cites·27 claims
- 4392US5714786ATransistors having controlled conductive spacers, uses of such transistors and methods of making such transistorsMICRON TECHNOLOGY INC·Filed 1996·Granted Feb 3, 1998·74 cites·14 claims
- 4492US5252504AReverse polysilicon CMOS fabricationMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 12, 1993·83 cites·20 claims
- 4592US5150276AMethod of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular ringsMICRON TECHNOLOGY INC·Filed 1992·Granted Sep 22, 1992·143 cites·47 claims
- 4692US5057449AProcess for creating two thicknesses of gate oxide within a dynamic random access memoryMICRON TECHNOLOGY INC·Filed 1990·Granted Oct 15, 1991·104 cites·3 claims
- 4791US6559032B2Method of fabricating an isolation structure on a semiconductor substrateMICRON TECHNOLOGY INC·Filed 2001·Granted May 6, 2003·47 cites·52 claims
- 4891US6544908B1Ammonia gas passivation on nitride encapsulated devicesMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 8, 2003·40 cites·57 claims
- 4991US6504756B2Dual floating gate programmable read only memory cell structure and method for its fabrication and operationMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 7, 2003·55 cites·17 claims
- 5091US6339011B1Method of forming semiconductive active area having a proximity gettering region therein and method of processing a monocrystalline silicon substrate to have a proximity gettering regionMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 15, 2002·59 cites·41 claims
Showing the top 50 of 324 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Fernando Gonzalez files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →