Inventor · disambiguated record
Kung-Hong Lee
Also filed as: LEE KUNG-HONG
10 granted patents·1 pending application·160 citations·filing 2001–2016
90Inventor score
Top patents by PatentIndex Score
11 records- 0188US9337339B1Metal oxide semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 10, 2016·11 cites·10 claims
- 0288US6448607B1Nonvolatile memory having embedded word linesEMEMORY TECHNOLOGY INC·Filed 2001·Granted Sep 10, 2002·42 cites·12 claims
- 0385US6518126B2Method of forming and operating trench split gate non-volatile flash memory cell structureEMEMORY TECHNOLOGY INC·Filed 2002·Granted Feb 11, 2003·36 cites·5 claims
- 0478US6580641B2Method of forming and operating trench split gate non-volatile flash memory cell structureEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jun 17, 2003·24 cites·11 claims
- 0574US6490196B1Method for operating a nonvolatile memory having embedded word linesEMEMORY TECHNOLOGY INC·Filed 2002·Granted Dec 3, 2002·17 cites·4 claims
- 0669US10475738B2Multi-threshold voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Nov 12, 2019·2 cites·16 claims
- 0767US6842374B2Method for operating N-channel electrically erasable programmable logic deviceEMEMORY TECHNOLOGY INC·Filed 2003·Granted Jan 11, 2005·13 cites·14 claims
- 0861US6819594B2Electrically erasable programmable logic deviceEMEMORY TECHNOLOGY INC·Filed 2003·Granted Nov 16, 2004·11 cites·30 claims
- 0955US7598795B2Negative voltage converterAU OPTRONICS CORP·Filed 2007·Granted Oct 6, 2009·4 cites·16 claims
- 1049US9741830B2Method for forming metal oxide semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 22, 2017·0 cites·11 claims
- 1134US2003068845A1Flash device having trench source lineFiled 2002·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kung-Hong Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →