Inventor · disambiguated record
Dustin A. Woodbury
Also filed as: WOODBURY DUSTIN · WOODBURY DUSTIN A · WOODBURY DUSTIN ALEXANDER
20 granted patents·176 citations·filing 1994–2010
95Inventor score
Top patents by PatentIndex Score
20 records- 0190US7285475B2Integrated circuit having a device wafer with a diffused doped backside layerINTERSIL INC·Filed 2005·Granted Oct 23, 2007·12 cites·16 claims
- 0279US7341958B2Integrated process for thin film resistors with silicidesINTERSIL INC·Filed 2005·Granted Mar 11, 2008·5 cites·22 claims
- 0371US6867495B2Integrated circuit having a device wafer with a diffused doped backside layerINTERSIL INC·Filed 2001·Granted Mar 15, 2005·9 cites·32 claims
- 0470US7662692B2Integrated process for thin film resistors with silicidesINTERSIL INC·Filed 2007·Granted Feb 16, 2010·2 cites·19 claims
- 0569US5933746AProcess of forming trench isolation deviceHARRIS CORP·Filed 1996·Granted Aug 3, 1999·31 cites·9 claims
- 0669US5856700ASemiconductor device with doped semiconductor and dielectric trench sidewall layersHARRIS CORP·Filed 1996·Granted Jan 5, 1999·39 cites·10 claims
- 0768US5770880AP-collector H.V. PMOS switch VT adjusted source/drainHARRIS CORP·Filed 1996·Granted Jun 23, 1998·28 cites·9 claims
- 0866US7605052B2Method of forming an integrated circuit having a device wafer with a diffused doped backside layerINTERSIL CORP·Filed 2007·Granted Oct 20, 2009·1 cites·15 claims
- 0965US6946364B2Integrated circuit having a device wafer with a diffused doped backside layerINTERSIL INC·Filed 2004·Granted Sep 20, 2005·6 cites·4 claims
- 1064US6667523B2Highly linear integrated resistive contactINTERSIL INC·Filed 2002·Granted Dec 23, 2003·10 cites·23 claims
- 1158US7187056B2Radiation hardened bipolar junction transistorINTERSIL INC·Filed 2006·Granted Mar 6, 2007·1 cites·7 claims
- 1256US6362075B1Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxideHARRIS CORP·Filed 1999·Granted Mar 26, 2002·13 cites·26 claims
- 1349US8338914B2Integrated process for thin film resistors with silicidesGASNER JOHN T·Filed 2010·Granted Dec 25, 2012·0 cites·25 claims
- 1441US7029981B2Radiation hardened bipolar junction transistorINTERSIL INC·Filed 2004·Granted Apr 18, 2006·0 cites·10 claims
- 1541US6403472B1Method of forming resistive contacts on intergrated circuits with mobility spoiling ions including high resistive contacts and low resistivity silicide contactsHARRIS CORP·Filed 1999·Granted Jun 11, 2002·6 cites·6 claims
- 1639US6551897B2Wafer trench article and processINTERSIL INC·Filed 2001·Granted Apr 22, 2003·0 cites·7 claims
- 1738US5622890AMethod of making contact regions for narrow trenches in semiconductor devicesHARRIS CORP·Filed 1994·Granted Apr 22, 1997·7 cites·16 claims
- 1835US5962908AContact regions for narrow trenches in semiconductor devices and methodHARRIS CORP·Filed 1997·Granted Oct 5, 1999·4 cites·13 claims
- 1932US6365953B2Wafer trench article and processINTERSIL INC·Filed 1999·Granted Apr 2, 2002·2 cites·6 claims
- 2028US7098103B2Method and structure for non-single-polycrystalline capacitor in an integrated circuitINTERSIL INC·Filed 2004·Granted Aug 29, 2006·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →