Inventor · disambiguated record
Richard J. Huang
Also filed as: HUANG RICHARD · HUANG RICHARD J
78 granted patents·8 pending applications·2,886 citations·filing 1994–2024
99Inventor score
Files withADVANCED MICRO DEVICES INC78NEO SEMICONDUCTOR INC2ADVANCED MICRO DEVICS INC1FUCHS MARTIN1FUJITSU LTD1
Top patents by PatentIndex Score
86 records- 0198US7015124B1Use of amorphous carbon for gate patterningADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 21, 2006·206 cites·26 claims
- 0298US6673684B1Use of diamond as a hard mask materialADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 6, 2004·280 cites·20 claims
- 0398US6559017B1Method of using amorphous carbon as spacer material in a disposable spacer processADVANCED MICRO DEVICES INC·Filed 2002·Granted May 6, 2003·226 cites·20 claims
- 0498US5635423ASimplified dual damascene process for multi-level metallization and interconnection structureADVANCED MICRO DEVICES INC·Filed 1994·Granted Jun 3, 1997·374 cites·13 claims
- 0594US6030901APhotoresist stripping without degrading low dielectric constant materialsADVANCED MICRO DEVICES INC·Filed 1999·Granted Feb 29, 2000·151 cites·18 claims
- 0692US5654589ALanding pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC applicationADVANCED MICRO DEVICES INC·Filed 1995·Granted Aug 5, 1997·96 cites·13 claims
- 0790US6875664B1Formation of amorphous carbon ARC stack having graded transition between amorphous carbon and ARC materialADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 5, 2005·47 cites·20 claims
- 0888US5674781ALanding pad technology doubled up as a local interconnect and borderless contact for deep sub-half micrometer IC applicationADVANCED MICRO DEVICES INC·Filed 1996·Granted Oct 7, 1997·69 cites·15 claims
- 0988US5670828ATunneling technology for reducing intra-conductive layer capacitanceADVANCED MICRO DEVICES INC·Filed 1995·Granted Sep 23, 1997·80 cites·21 claims
- 1087US6429121B1Method of fabricating dual damascene with silicon carbide via mask/ARCADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 6, 2002·36 cites·20 claims
- 1187US6346467B1Method of making tungsten gate MOS transistor and memory cell by encapsulatingADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 12, 2002·43 cites·17 claims
- 1286US7084071B1Use of multilayer amorphous carbon ARC stack to eliminate line warpage phenomenonADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 1, 2006·34 cites·23 claims
- 1386US6407009B1Methods of manufacture of uniform spin-on filmsADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 18, 2002·74 cites·31 claims
- 1486US6235453B1Low-k photoresist removal processADVANCED MICRO DEVICES INC·Filed 1999·Granted May 22, 2001·78 cites·7 claims
- 1585US6864556B1CVD organic polymer film for advanced gate patterningADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 8, 2005·30 cites·18 claims
- 1685US6518646B1Semiconductor device with variable composition low-k inter-layer dielectric and method of makingADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 11, 2003·40 cites·14 claims
- 1783US6400023B2Integration of low-k SiOF for damascene structureADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 4, 2002·22 cites·13 claims
- 1881US6927113B1Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 9, 2005·31 cites·24 claims
- 1981US6831003B1Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigrationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 14, 2004·29 cites·14 claims
- 2080US6803313B2Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholesADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 12, 2004·19 cites·11 claims
- 2179US7033960B1Multi-chamber deposition of silicon oxynitride film for patterningADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·22 cites·13 claims
- 2279US6689684B1Cu damascene interconnections using barrier/capping layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 10, 2004·27 cites·12 claims
- 2379US6429108B1Non-volatile memory device with encapsulated tungsten gate and method of making sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 6, 2002·28 cites·19 claims
- 2478US6400030B1Self-aligning vias for semiconductorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 4, 2002·21 cites·10 claims
- 2577US6653202B1Method of shallow trench isolation (STI) formation using amorphous carbonADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 25, 2003·18 cites·20 claims
- 2675US6495443B1Method of re-working copper damascene wafersADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 17, 2002·22 cites·20 claims
- 2773US6869734B1EUV reflective mask having a carbon film and a method of making such a maskADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 22, 2005·11 cites·20 claims
- 2873US6177364B1Integration of low-K SiOF for damascene structureADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 23, 2001·40 cites·15 claims
- 2973US6060741AStacked gate structure for flash memory applicationADVANCED MICRO DEVICES INC·Filed 1998·Granted May 9, 2000·31 cites·12 claims
- 3072US6225240B1Rapid acceleration methods for global planarization of spin-on filmsADVANCED MICRO DEVICES INC·Filed 1998·Granted May 1, 2001·39 cites·20 claims
- 3171US6530340B2Apparatus for manufacturing planar spin-on filmsADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 11, 2003·38 cites·26 claims
- 3271US6252303B1Intergration of low-K SiOF as inter-layer dielectricADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 26, 2001·30 cites·4 claims
- 3370US6596631B1Method of forming copper interconnect capping layers with improved interface and adhesionADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 22, 2003·17 cites·19 claims
- 3469US6855627B1Method of using amorphous carbon to prevent resist poisoningADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 15, 2005·12 cites·20 claims
- 3567US7521304B1Method for forming integrated circuitADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 21, 2009·9 cites·26 claims
- 3667US7132306B1Method of forming an interlevel dielectric layer employing dielectric etch-back process without extra mask setADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 7, 2006·11 cites·15 claims
- 3767US6317642B1Apparatus and methods for uniform scan dispensing of spin-on materialsADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 13, 2001·32 cites·22 claims
- 3867US5801095AProduction worthy interconnect process for deep sub-half micrometer back-end-of-line technologyADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 1, 1998·30 cites·11 claims
- 3964US6489230B1Integration of low-k SiOF as inter-layer dielectricADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 3, 2002·7 cites·22 claims
- 4064US6444593B1Surface treatment of low-K SiOF to prevent metal interactionADVANCED MICRO DEVICES INC·Filed 1999·Granted Sep 3, 2002·28 cites·20 claims
- 4163US6472336B1Forming an encapsulating layer after deposition of a dielectric comprised of corrosive materialADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 29, 2002·9 cites·11 claims
- 4262US6093635AHigh integrity borderless vias with HSQ gap filled patterned conductive layersADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 25, 2000·27 cites·29 claims
- 4360US8629535B2Mask for forming integrated circuitHUANG RICHARD J·Filed 2011·Granted Jan 14, 2014·1 cites·19 claims
- 4460US5994778ASurface treatment of low-k SiOF to prevent metal interactionADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 30, 1999·21 cites·11 claims
- 4560US2024121938A13d memory cells and array architectures and processesNEO SEMICONDUCTOR INC·Filed 2023·Application pending·0 cites
- 4659US6133619AReduction of silicon oxynitride film delamination in integrated circuit inter-level dielectricsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 17, 2000·24 cites·6 claims
- 4759US2024265969A13d memory cells and array architecturesNEO SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 4858US6136729AMethod for improving semiconductor dielectricsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 24, 2000·22 cites·34 claims
- 4958US6124640AScalable and reliable integrated circuit inter-level dielectricADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 26, 2000·21 cites·14 claims
- 5058US5686761AProduction worthy interconnect process for deep sub-half micrometer back-end-of-line technologyADVANCED MICRO DEVICES INC·Filed 1996·Granted Nov 11, 1997·20 cites·4 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →