Inventor · disambiguated record
Bradley A. Orner
Also filed as: ORNER BRADLEY · ORNER BRADLEY A · ORNER BRADLEY ALAN
25 granted patents·6 pending applications·103 citations·filing 2003–2024
95Inventor score
Top patents by PatentIndex Score
31 records- 0190US7888745B2Bipolar transistor with dual shallow trench isolation and low base resistanceIBM·Filed 2006·Granted Feb 15, 2011·21 cites·22 claims
- 0284US8105924B2Deep trench based far subcollector reachthroughORNER BRADLEY A·Filed 2010·Granted Jan 31, 2012·8 cites·11 claims
- 0383US8288244B2Lateral passive device having dual annular electrodesCOLLINS DAVID S·Filed 2010·Granted Oct 16, 2012·6 cites·4 claims
- 0481US7892910B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationIBM·Filed 2007·Granted Feb 22, 2011·7 cites·20 claims
- 0580US8338265B2Silicided trench contact to buried conductive layerCOOLBAUGH DOUGLAS D·Filed 2008·Granted Dec 25, 2012·7 cites·16 claims
- 0680US7691734B2Deep trench based far subcollector reachthroughIBM·Filed 2007·Granted Apr 6, 2010·8 cites·9 claims
- 0778US7335927B2Lateral silicided diodesIBM·Filed 2006·Granted Feb 26, 2008·6 cites·18 claims
- 0875US8987067B2Segmented guard ring structures with electrically insulated gap structures and design structures thereofIBM·Filed 2013·Granted Mar 24, 2015·3 cites·10 claims
- 0974US7550787B2Varied impurity profile region formation for varying breakdown voltage of devicesIBM·Filed 2005·Granted Jun 23, 2009·4 cites·6 claims
- 1073US8592293B2Schottky barrier diodes for millimeter wave SiGe BiCMOS applicationsJOHNSON JEFFREY B·Filed 2011·Granted Nov 26, 2013·3 cites·17 claims
- 1173US8236662B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationFEILCHENFELD NATALIE B·Filed 2010·Granted Aug 7, 2012·3 cites·20 claims
- 1272US7625792B2Method of base formation in a BiCMOS processIBM·Filed 2005·Granted Dec 1, 2009·4 cites·14 claims
- 1369US7936041B2Schottky barrier diodes for millimeter wave SiGe BICMOS applicationsIBM·Filed 2007·Granted May 3, 2011·3 cites·15 claims
- 1463US7326987B2Non-continuous encapsulation layer for MIM capacitorIBM·Filed 2005·Granted Feb 5, 2008·2 cites·14 claims
- 1559US8853043B2Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)HODGE WADE J·Filed 2012·Granted Oct 7, 2014·1 cites·19 claims
- 1659US8217497B2FIN differential MOS varactor diodeORNER BRADLEY A·Filed 2007·Granted Jul 10, 2012·2 cites·9 claims
- 1757US2025348054A1Analysis and manufacture of curved features for integrated circuitsGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1855US8299500B2Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base regionHODGE WADE J·Filed 2005·Granted Oct 30, 2012·1 cites·20 claims
- 1955US6911681B1Method of base formation in a BiCMOS processIBM·Filed 2004·Granted Jun 28, 2005·5 cites·14 claims
- 2054US2025356066A13d schematic visualizationGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 2154US2024402486A1Signal propagation simulation tool including virtual optical probing and/or bidirectional simulationGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 2252US8030167B2Varied impurity profile region formation for varying breakdown voltage of devicesIBM·Filed 2007·Granted Oct 4, 2011·0 cites·19 claims
- 2352US7701015B2Bipolar and CMOS integration with reduced contact heightIBM·Filed 2003·Granted Apr 20, 2010·5 cites·8 claims
- 2452US6913965B2Non-Continuous encapsulation layer for MIM capacitorIBM·Filed 2004·Granted Jul 5, 2005·4 cites·9 claims
- 2552US2015035112A1Segmented guard ring structures with electrically insulated gap structures and design structures thereofIBM·Filed 2014·Application pending·0 cites
- 2651US7381997B2Lateral silicided diodesIBM·Filed 2007·Granted Jun 3, 2008·0 cites·16 claims
- 2751US2024273275A1Parameterized cell with multiple layout configuration optionsGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 2850US8525293B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationFEILCHENFELD NATALIE B·Filed 2012·Granted Sep 3, 2013·0 cites·20 claims
- 2949US2025148181A1Signal propagation simulation including photonic device-to-photonic device connectivity awarenessGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 3046US7821097B2Lateral passive device having dual annular electrodesIBM·Filed 2006·Granted Oct 26, 2010·0 cites·4 claims
- 3139US8421478B2Radio frequency integrated circuit with on-chip noise source for self-testFLOYD BRIAN ALLAN·Filed 2008·Granted Apr 16, 2013·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →