Inventor · disambiguated record
Stephan Kudelka
Also filed as: KUDELKA STEPHAN · KUDELKA STEPHAN P
47 granted patents·14 pending applications·1,068 citations·filing 1998–2008
98Inventor score
Top patents by PatentIndex Score
61 records- 0198US6440872B1Method for hybrid DRAM cell utilizing confined strap isolationIBM·Filed 2000·Granted Aug 27, 2002·166 cites·15 claims
- 0294US6573137B1Single sided buried strapINFINEON TECHNOLOGIES CORP·Filed 2000·Granted Jun 3, 2003·58 cites·12 claims
- 0394US6498061B2Negative ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formationIBM·Filed 2000·Granted Dec 24, 2002·66 cites·11 claims
- 0493US6284666B1Method of reducing RIE lag for deep trench silicon etchingIBM·Filed 2000·Granted Sep 4, 2001·87 cites·13 claims
- 0588US7666752B2Deposition method for a transition-metal-containing dielectricQIMONDA AG·Filed 2007·Granted Feb 23, 2010·17 cites·9 claims
- 0687US6555430B1Process flow for capacitance enhancement in a DRAM trenchIBM·Filed 2000·Granted Apr 29, 2003·44 cites·16 claims
- 0787US6426253B1Method of forming a vertically oriented device in an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 30, 2002·49 cites·27 claims
- 0886US6566273B2Etch selectivity inversion for etching along crystallographic directions in siliconINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 20, 2003·35 cites·22 claims
- 0984US6605838B1Process flow for thick isolation collar with reduced lengthIBM·Filed 2002·Granted Aug 12, 2003·39 cites·20 claims
- 1084US6437401B1Structure and method for improved isolation in trench storage cellsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 20, 2002·38 cites·24 claims
- 1184US6406970B1Buried strap formation without TTO depositionINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 18, 2002·28 cites·21 claims
- 1283US6066527ABuried strap poly etch back (BSPE) processINFINEON TECHNOLOGIES CORP·Filed 1999·Granted May 23, 2000·45 cites·25 claims
- 1382US6335247B1Integrated circuit vertical trench device and method of forming thereofINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jan 1, 2002·25 cites·19 claims
- 1480US6599798B2Method of preparing buried LOCOS collar in trench DRAMSINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 29, 2003·26 cites·11 claims
- 1579US6261972B1Dual gate oxide process for uniform oxide thicknessINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 17, 2001·27 cites·12 claims
- 1677US6458647B1Process flow for sacrificial collar with poly maskINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 1, 2002·22 cites·27 claims
- 1775US6670235B1Process flow for two-step collar in DRAM preparationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 30, 2003·16 cites·10 claims
- 1874US6740595B2Etch process for recessing polysilicon in trench structuresINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 25, 2004·16 cites·8 claims
- 1974US6518616B2Vertical gate top engineering for improved GC and CB process windowsIBM·Filed 2001·Granted Feb 11, 2003·22 cites·5 claims
- 2073US7157328B2Selective etching to increase trench surface areaIBM·Filed 2005·Granted Jan 2, 2007·4 cites·20 claims
- 2173US6953722B2Method for patterning ceramic layersINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 11, 2005·16 cites·11 claims
- 2273US6486024B1Integrated circuit trench device with a dielectric collar stack, and method of forming thereofINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 26, 2002·14 cites·20 claims
- 2371US6919255B2Semiconductor trench structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 19, 2005·16 cites·18 claims
- 2470US6605860B1Semiconductor structures and manufacturing methodsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Aug 12, 2003·10 cites·2 claims
- 2569US6853025B2Trench capacitor with buried strapINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 8, 2005·9 cites·13 claims
- 2668US6167891B1Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafersINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jan 2, 2001·35 cites·18 claims
- 2767US7157382B2Method for expanding a trench in a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 2, 2007·2 cites·10 claims
- 2866US6916721B2Method for fabricating a trench capacitor with an insulation collarINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 12, 2005·11 cites·16 claims
- 2966US6677197B2High aspect ratio PBL SiN barrier formationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jan 13, 2004·12 cites·20 claims
- 3066US6548344B1Spacer formation process using oxide shieldINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 15, 2003·10 cites·21 claims
- 3164US7157371B2Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 2, 2007·9 cites·15 claims
- 3264US6927172B2Process to suppress lithography at a wafer edgeINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 9, 2005·10 cites·18 claims
- 3362US7157329B2Trench capacitor with buried strapINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 2, 2007·1 cites·14 claims
- 3460US6295998B1Temperature controlled gassification of deionized water for megasonic cleaning of semiconductor wafersINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Oct 2, 2001·25 cites·21 claims
- 3558US6613642B2Method for surface roughness enhancement in semiconductor capacitor manufacturingIBM·Filed 2001·Granted Sep 2, 2003·8 cites·18 claims
- 3657US7312114B2Manufacturing method for a trench capacitor having an isolation collar electrically connected with a substrate on a single side via a buried contact for use in a semiconductor memory cellINFINEON TECHNOLOGIES AG·Filed 2005·Granted Dec 25, 2007·2 cites·13 claims
- 3757US6740555B1Semiconductor structures and manufacturing methodsINFINEON TECHNOLOGIES AG·Filed 1999·Granted May 25, 2004·16 cites·7 claims
- 3851US6559002B1Rough oxide hard mask for DT surface area enhancement for DT DRAMINFINEON TECHNOLOGIES CORP·Filed 2001·Granted May 6, 2003·3 cites·10 claims
- 3950US6974743B2Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gatesIBM·Filed 2004·Granted Dec 13, 2005·6 cites·13 claims
- 4048US2005245025A1Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stopKUDELKA STEPHAN P·Filed 2005·Application pending·0 cites
- 4147US6352893B1Low temperature self-aligned collar formationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Mar 5, 2002·13 cites·22 claims
- 4245US7531418B2Method of producing a conductive layer including two metal nitridesQIMONDA AG·Filed 2005·Granted May 12, 2009·0 cites·19 claims
- 4344US7273790B2Method for fabricating trench capacitor with insulation collar electrically connected to substrate through buried contact, in particular, for a semiconductor memory cellINFINEON TECHNOLOGIES AG·Filed 2004·Granted Sep 25, 2007·2 cites·13 claims
- 4444US2008176375A1Method for forming a dielectric layerQIMONDA AG·Filed 2008·Application pending·0 cites
- 4543US2005176198A1Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stopFiled 2004·Application pending·0 cites
- 4641US2009321805A1Insulator material over buried conductive lineQIMONDA AG·Filed 2008·Application pending·0 cites
- 4740US7413951B2Stacked capacitor and method for producing stacked capacitors for dynamic memory cellsQIMONDA AG·Filed 2006·Granted Aug 19, 2008·0 cites·27 claims
- 4840US2008182427A1Deposition method for transition-metal oxide based dielectricOBERBECK LARS·Filed 2007·Application pending·0 cites
- 4940US2004115895A1Method of preparing buried LOCOS collar in trench DRAMSFiled 2003·Application pending·0 cites
- 5039US7402860B2Method for fabricating a capacitorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 22, 2008·0 cites·21 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →