Inventor · disambiguated record
Yao-Chin Cheng
Also filed as: CHENG YAO · CHENG YAO-CHIN
6 granted patents·9 pending applications·91 citations·filing 1998–2023
82Inventor score
Top patents by PatentIndex Score
15 records- 0183US6365475B1Method of forming a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 2, 2002·34 cites·18 claims
- 0275US7875520B2Method of forming CMOS transistorUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jan 25, 2011·6 cites·17 claims
- 0373US6261912B1Method of fabricating a transistorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 17, 2001·35 cites·20 claims
- 0448US6383883B1Method of reducing junction capacitance of source/drain regionUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 7, 2002·12 cites·20 claims
- 0545US2025056781A1Layout pattern of static random-access memoryUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 0642US9601245B2Magnetoelectric effect material and method for manufacturing sameCHENG YAO·Filed 2012·Granted Mar 21, 2017·0 cites·40 claims
- 0739US2009186475A1Method of manufacturing a MOS transistorTING SHYH-FANN·Filed 2008·Application pending·0 cites
- 0837US2004106273A1Interconnect structure and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 0937US2004105968A1Interconnect structure and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2002·Application pending·0 cites
- 1035US2009117701A1Method for manufacturing a mos transistorWU MENG-YI·Filed 2007·Application pending·0 cites
- 1134US6174760B1Method of improving vertical BJT gainUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 16, 2001·4 cites·13 claims
- 1234US2002179982A1MOS field effect transistor structure and method of manufactureUNITED MICROELECTRONICS CORP·Filed 2001·Application pending·0 cites
- 1333US2002179934A1MOS field effect transistor structure and method of manufactureFiled 2002·Application pending·0 cites
- 1428US2002068409A1Method of reducing junction capacitanceFiled 1999·Application pending·0 cites
- 1528US2002182826A1Fabrication method for a shallow trench isolation structureFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →