Inventor · disambiguated record
Ming-Huan Tsai
Also filed as: TSAI MING-HUAN
68 granted patents·10 pending applications·1,055 citations·filing 1996–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG38TAIWAN SEMICONDUCTOR MFG CO LTD21TSAI MING-HUAN7MOSEL VITELIC INC2UNITED MICROELECTRONICS CORP2
Top patents by PatentIndex Score
78 records- 0199US8809139B2Fin-last FinFET and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 19, 2014·224 cites·20 claims
- 0297US8236659B2Source and drain feature profile for improving device performance and method of manufacturing sameTSAI MING-HUAN·Filed 2010·Granted Aug 7, 2012·41 cites·7 claims
- 0395US10050149B1Gate structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·23 cites·20 claims
- 0495US8987791B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 24, 2015·18 cites·19 claims
- 0594US12125886B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·2 cites·20 claims
- 0694US8216906B2Method of manufacturing integrated circuit device with well controlled surface proximityTSAI MING-HUAN·Filed 2010·Granted Jul 10, 2012·21 cites·17 claims
- 0794US6407002B1Partial resist free approach in contact etch to improve W-fillingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 18, 2002·83 cites·27 claims
- 0892US9202691B2Semiconductor device having modified profile metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 1, 2015·8 cites·16 claims
- 0992US8614132B2Integrated circuit device with well controlled surface proximity and method of manufacturing sameTSAI MING-HUAN·Filed 2011·Granted Dec 24, 2013·10 cites·19 claims
- 1092US8445940B2Source and drain feature profile for improving device performanceTSAI MING-HUAN·Filed 2012·Granted May 21, 2013·12 cites·20 claims
- 1192US6720132B2Bi-layer photoresist dry development and reactive ion etch methodTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 13, 2004·46 cites·23 claims
- 1289US9153695B2Fin-last finFET and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 6, 2015·7 cites·22 claims
- 1389US8900960B2Integrated circuit device with well controlled surface proximity and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·6 cites·21 claims
- 1489US7078351B2Photoresist intensive patterning and processingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 18, 2006·44 cites·7 claims
- 1588US7511349B2Contact or via hole structure with enlarged bottom critical dimensionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 31, 2009·17 cites·16 claims
- 1687US9159552B2Method of forming a germanium-containing FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 13, 2015·7 cites·20 claims
- 1787US8569139B2Method of manufacturing strained source/drain structuresNIEH CHUN-FENG·Filed 2010·Granted Oct 29, 2013·8 cites·20 claims
- 1887US6867084B1Gate structure and method of forming the gate dielectric with mini-spacerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 15, 2005·31 cites·22 claims
- 1985US8709897B2High performance strained source-drain structure and method of fabricating the sameSUNG HSUEH-CHANG·Filed 2010·Granted Apr 29, 2014·9 cites·20 claims
- 2085US8680625B2Facet-free semiconductor deviceFAN WEI-HAN·Filed 2010·Granted Mar 25, 2014·12 cites·20 claims
- 2185US2025331265A1Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2282US8946035B2Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boostTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 3, 2015·5 cites·14 claims
- 2382US8828832B2Strained structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 9, 2014·5 cites·20 claims
- 2481US7223647B2Method for forming integrated advanced semiconductor device using sacrificial stress layerTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 29, 2007·28 cites·15 claims
- 2581US6251791B1Eliminating etching microloading effect by in situ deposition and etchingUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jun 26, 2001·63 cites·19 claims
- 2680US10971594B2Semiconductor device having modified profile metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·1 cites·20 claims
- 2780US6828205B2Method using wet etching to trim a critical dimensionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 7, 2004·24 cites·19 claims
- 2879US12094951B1Capping structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 2979US9543301B2Fin-last FinFET and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·2 cites·20 claims
- 3079US6884736B2Method of forming contact plug on silicide structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 26, 2005·20 cites·43 claims
- 3179US2024371946A1Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MANUFACTURIANG CO LTD·Filed 2024·Application pending·0 cites
- 3279US2025351402A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3378US6444566B1Method of making borderless contact having a sion buffer layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 3, 2002·22 cites·6 claims
- 3478US2024363721A1Capping structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3577US8765556B2Method of fabricating strained structure in semiconductor deviceHSU YU-RUNG·Filed 2009·Granted Jul 1, 2014·5 cites·20 claims
- 3677US6410424B1Process flow to optimize profile of ultra small size photo resist free contactTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 25, 2002·26 cites·26 claims
- 3776US11688787B2Semiconductor device having modified profile metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 3875US9559206B2FinFETs with necking in the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·2 cites·20 claims
- 3975US8455859B2Strained structure of semiconductor deviceTSAI MING-HUAN·Filed 2009·Granted Jun 4, 2013·5 cites·19 claims
- 4074US9780216B2Combination FinFET and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·3 cites·20 claims
- 4174US6787455B2Bi-layer photoresist method for forming high resolution semiconductor featuresTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 7, 2004·16 cites·20 claims
- 4273US9673292B2Semiconductor device having modified profile metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 6, 2017·1 cites·19 claims
- 4373US7067235B2Bi-layer photoresist dry development and reactive ion etch methodTSAI MING HUAN·Filed 2002·Granted Jun 27, 2006·12 cites·20 claims
- 4473US6368974B1Shrinking equal effect critical dimension of mask by in situ polymer deposition and etchingUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 9, 2002·43 cites·22 claims
- 4573US2024363756A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4672US9048253B2Method of manufacturing strained source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·2 cites·21 claims
- 4772US7265060B2Bi-level resist structure and fabrication method for contact holes on semiconductor substratesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 4, 2007·12 cites·28 claims
- 4871US11652152B2Capping structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 4971US8368147B2Strained semiconductor device with recessed channelTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·3 cites·12 claims
- 5070US6436841B1Selectivity oxide-to-oxynitride etch process using a fluorine containing gas, an inert gas and a weak oxidantTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 20, 2002·22 cites·33 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →