Inventor · disambiguated record
Mohammed Tanvir Quddus
Also filed as: QUDDUS MOHAMMED · QUDDUS MOHAMMED T · QUDDUS MOHAMMED TANVIR
41 granted patents·5 pending applications·207 citations·filing 2000–2021
97Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC22SEMICONDUCTOR COMPONENTS IND18QUDDUS MOHAMMED TANVIR3GRIVNA GORDON M2SEMICONDUCTOR COMPONENT IND LL1
Top patents by PatentIndex Score
46 records- 0194US10439075B1Termination structure for insulated gate semiconductor device and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 8, 2019·10 cites·20 claims
- 0291US7306999B2High voltage sensor device and method thereforSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Dec 11, 2007·19 cites·22 claims
- 0390US8106436B2Semiconductor trench structure having a sealing plugGRIVNA GORDON M·Filed 2011·Granted Jan 31, 2012·10 cites·20 claims
- 0488US6448625B1High voltage metal oxide device with enhanced well regionSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Sep 10, 2002·46 cites·15 claims
- 0587US7126166B2High voltage lateral FET structure with improved on resistance performanceSEMICONDUCTOR COMPONENTS IND·Filed 2004·Granted Oct 24, 2006·50 cites·19 claims
- 0685US10566466B2Termination structure for insulated gate semiconductor device and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Feb 18, 2020·3 cites·20 claims
- 0784US7803643B2Method of forming a high voltage sense elementSEMICONDUCTOR COMPONENT IND LL·Filed 2010·Granted Sep 28, 2010·8 cites·3 claims
- 0883US10608122B2Schottky device and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Mar 31, 2020·3 cites·20 claims
- 0983US10177232B2Methods for manufacturing a Schottky device with mesa regions in-between conductive trenches and having multi-concentration doping profilesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Jan 8, 2019·3 cites·18 claims
- 1083US7902075B2Semiconductor trench structure having a sealing plug and methodSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Mar 8, 2011·9 cites·7 claims
- 1182US7276766B2Semiconductor structure with improved on resistance and breakdown voltage performanceSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Oct 2, 2007·9 cites·15 claims
- 1279US9263598B2Schottky device and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Feb 16, 2016·3 cites·17 claims
- 1378US7955943B2High voltage sensor device and method thereforSEMICONDUCTOR COMPONENTS IND·Filed 2009·Granted Jun 7, 2011·7 cites·20 claims
- 1477US9716151B2Schottky device having conductive trenches and a multi-concentration doping profile therebetweenSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Jul 25, 2017·3 cites·20 claims
- 1576US8168466B2Schottky diode and method thereforQUDDUS MOHAMMED TANVIR·Filed 2007·Granted May 1, 2012·7 cites·17 claims
- 1671US8349625B2Method of sensing a high voltageSEMICONDUCTOR COMPONENTS IND·Filed 2010·Granted Jan 8, 2013·2 cites·5 claims
- 1769US7638405B2High voltage sensor deviceSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted Dec 29, 2009·3 cites·13 claims
- 1868US11380805B2Termination structure for insulated gate semiconductor device and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Jul 5, 2022·0 cites·20 claims
- 1966US9552993B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Jan 24, 2017·1 cites·20 claims
- 2064US9716187B2Trench semiconductor device having multiple trench depths and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Jul 25, 2017·1 cites·20 claims
- 2164US8502336B2Semiconductor diode and method of manufactureGRIVNA GORDON M·Filed 2011·Granted Aug 6, 2013·1 cites·14 claims
- 2262US10923604B2Termination structure for insulated gate semiconductor device and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Feb 16, 2021·0 cites·20 claims
- 2360US6507058B1Low threshold compact MOS device with channel region formed by outdiffusion of two regions and method of making sameSEMICONDUCTOR COMPONENTS IND·Filed 2000·Granted Jan 14, 2003·7 cites·1 claims
- 2458US10700219B1Method of manufacturing a semiconductor componentSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Jun 30, 2020·0 cites·20 claims
- 2557US10847660B2Trench semiconductor device having multiple active trench depths and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Nov 24, 2020·0 cites·19 claims
- 2657US9478426B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Oct 25, 2016·0 cites·20 claims
- 2757US9117936B2Semiconductor diode and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Aug 25, 2015·0 cites·20 claims
- 2857US2020105877A1Method for forming trench semiconductor device having schottky barrier structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Application pending·0 cites
- 2956US10847659B2Termination structure for insulated gate semiconductor device and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Nov 24, 2020·0 cites·20 claims
- 3056US8815682B2Semiconductor diode and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Aug 26, 2014·0 cites·20 claims
- 3154US10593760B2Method for forming trench semiconductor device having Schottky barrier structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Mar 17, 2020·0 cites·18 claims
- 3254US10211060B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Feb 19, 2019·0 cites·20 claims
- 3351US10797182B2Trench semiconductor device having shaped gate dielectric and gate electrode structures and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Oct 6, 2020·0 cites·20 claims
- 3451US9859449B2Method of forming trench semiconductor device having multiple trench depthsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Jan 2, 2018·0 cites·20 claims
- 3550US11469312B2Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 3650US9647080B2Schottky device and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted May 9, 2017·0 cites·18 claims
- 3749US10388801B1Trench semiconductor device having shaped gate dielectric and gate electrode structures and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Aug 20, 2019·0 cites·20 claims
- 3848US9000550B2Semiconductor component and method of manufactureQUDDUS MOHAMMED TANVIR·Filed 2008·Granted Apr 7, 2015·0 cites·11 claims
- 3946US6555877B2NMOSFET with negative voltage capability formed in P-type substrate and method of making the sameSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Apr 29, 2003·2 cites·7 claims
- 4045US10431699B2Trench semiconductor device having multiple active trench depths and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Oct 1, 2019·0 cites·24 claims
- 4145US8889528B2Method for manufacturing a semiconductor componentQUDDUS MOHAMMED TANVIR·Filed 2012·Granted Nov 18, 2014·0 cites·17 claims
- 4236US9331065B2Semiconductor diode and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2015·Granted May 3, 2016·0 cites·20 claims
- 4336US2002098637A1High voltage laterally diffused metal oxide semiconductor with improved on resistance and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 4433US2002125530A1High voltage metal oxide device with multiple p-regionsSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 4533US2002130361A1Semiconductor device with laterally varying p-top layersSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 4633US2002130360A1High voltage MOS device with no field oxide over the p-top regionSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →