Inventor · disambiguated record
Hisashi Nomura
Also filed as: NOMURA HISASHI
6 granted patents·2 pending applications·77 citations·filing 1997–2023
81Inventor score
Files withCHIYODA CORP2HITACHI INT ELECTRIC INC2KOKUSAI ELECTRIC CO LTD1KOKUSAI ELECTRIC CORP1NOMURA HISASHI1
Top patents by PatentIndex Score
8 records- 0182US6787481B2Method for manufacturing semiconductor deviceHITACHI INT ELECTRIC INC·Filed 2003·Granted Sep 7, 2004·29 cites·17 claims
- 0272US9023429B2Method of manufacturing semiconductor device and substrate processing apparatusTAKESHIMA YUICHIRO·Filed 2012·Granted May 5, 2015·4 cites·11 claims
- 0367US5960159AHeat treatment of semiconductor wafers where upper heater directly heats upper wafer in its entirety and lower heater directly heats lower wafer in its entiretyKOKUSAI ELECTRIC CO LTD·Filed 1997·Granted Sep 28, 1999·37 cites·20 claims
- 0456US7943115B2Porous 4 group metal oxide and method for preparation thereofCHIYODA CORP·Filed 2002·Granted May 17, 2011·4 cites·12 claims
- 0556US2023294145A1Gas cleaning method, method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatusKOKUSAI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 0652US7691781B2Layered porous titanium oxide, process for producing the same, and catalyst comprising the sameCHIYODA CORP·Filed 2003·Granted Apr 6, 2010·2 cites·18 claims
- 0745US6821871B2Method for manufacturing semiconductor device, substrate treatment method, and semiconductor manufacturing apparatusHITACHI INT ELECTRIC INC·Filed 2001·Granted Nov 23, 2004·1 cites·12 claims
- 0831US2012305026A1Substrate Processing Apparatus and Substrate Processing MethodNOMURA HISASHI·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →