Inventor · disambiguated record
Jae-Ouk Choo
Also filed as: CHOO JAE O · CHOO JAE-OUK
12 granted patents·11 pending applications·46 citations·filing 2006–2018
88Inventor score
Files withSAMSUNG ELECTRONICS CO LTD11AIR PROD & CHEM6CHOO JAE-OUK2YOON IL-YOUNG2GLOBALFOUNDRIES INC1
Top patents by PatentIndex Score
23 records- 0196US9305806B2Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applicationsAIR PROD & CHEM·Filed 2015·Granted Apr 5, 2016·9 cites·11 claims
- 0289US8974692B2Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applicationsAIR PROD & CHEM·Filed 2013·Granted Mar 10, 2015·5 cites·6 claims
- 0388US7452817B2CMP method providing reduced thickness variationsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·18 cites·25 claims
- 0478US7642148B2Methods of producing semiconductor devices including multiple stress films in interface areaSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·7 cites·11 claims
- 0573US9062230B2Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereofAIR PROD & CHEM·Filed 2014·Granted Jun 23, 2015·2 cites·9 claims
- 0671US10566231B2Interconnect formation with chamferless via, and related interconnectGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 18, 2020·2 cites·14 claims
- 0769US7785951B2Methods of forming integrated circuit devices having tensile and compressive stress layers therein and devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 31, 2010·3 cites·17 claims
- 0854US10011741B2Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereofAIR PROD & CHEM·Filed 2016·Granted Jul 3, 2018·0 cites·8 claims
- 0954US8859428B2Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereofAIR PROD & CHEM·Filed 2013·Granted Oct 14, 2014·0 cites·8 claims
- 1052US9305476B2Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereofAIR PROD & CHEM·Filed 2015·Granted Apr 5, 2016·0 cites·11 claims
- 1152US7902609B2Semiconductor devices including multiple stress films in interface areaSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 8, 2011·0 cites·11 claims
- 1249US2007178644A1Semiconductor device having an insulating layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1348US2009280637A1Method of manufacturing semiconductor device including ultra low dielectric constant layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1448US2009286453A1Method and apparatus for chemical-mechanical polishingSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1547US2009305438A1Trench isolation method of semiconductor device using chemical mechanical polishing processYOON IL-YOUNG·Filed 2009·Application pending·0 cites
- 1646US2010007021A1Methods of Fabricating Semiconductor Devices Including Porous Insulating LayersCHOO JAE-OUK·Filed 2009·Application pending·0 cites
- 1746US2009305501A1Method of fabricating semiconductor device using a chemical mechanical polishing processLEE TAE-HOON·Filed 2009·Application pending·0 cites
- 1844US2008153253A1Chemical mechanical polishing process and method of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1944US2008045018A1Method of chemical-mechanical polishing and method of forming isolation layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2044US2008132030A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2142US2007128991A1Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the sameYOON IL-YOUNG·Filed 2006·Application pending·0 cites
- 2240US7595253B2Method of forming the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 29, 2009·0 cites·11 claims
- 2332US2008081406A1Method of Fabricating Semiconductor Device Having Dual Stress LinerCHOO JAE-OUK·Filed 2007·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →