Inventor · disambiguated record
Johannes Josephus Theodorus Marinus Donkers
Also filed as: DONKERS JOHANNES · DONKERS JOHANNES J T M · DONKERS JOHANNES JOSEPHUS THEO · DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS
46 granted patents·10 pending applications·85 citations·filing 2003–2024
96Inventor score
Files withNXP BV31Nexperia BV5VANHOUCKE TONY4DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS2GRIDELET EVELYNE2
Top patents by PatentIndex Score
56 records- 0184US8114774B2Semiconductor device, and semiconductor device obtained by such a methodHURKX GODEFRIDUS ADRIANUS MARIA·Filed 2007·Granted Feb 14, 2012·12 cites·16 claims
- 0282US9391187B2Semiconductor heterojunction deviceNXP BV·Filed 2015·Granted Jul 12, 2016·4 cites·17 claims
- 0380US8101491B2Heterojunction bipolar transistorDONKERS JOHANNES JOSEPHUS THEODORUS MARINUS·Filed 2010·Granted Jan 24, 2012·7 cites·11 claims
- 0478US8026146B2Method of manufacturing a bipolar transistorNXP BV·Filed 2007·Granted Sep 27, 2011·9 cites·10 claims
- 0575US9917187B2Semiconductor device and manufacturing methodNexperia BV·Filed 2015·Granted Mar 13, 2018·2 cites·12 claims
- 0675US9305789B2Semiconductor device comprising an active layer and a Schottky contactNXP BV·Filed 2015·Granted Apr 5, 2016·3 cites·7 claims
- 0772US8962461B2GaN HEMTs and GaN diodesNXP BV·Filed 2013·Granted Feb 24, 2015·3 cites·15 claims
- 0872US7883954B2Self-aligned epitaxially grown bipolar transistorNXP BV·Filed 2005·Granted Feb 8, 2011·8 cites·9 claims
- 0969US10490407B2Method of making a semiconductor switch deviceNXP BV·Filed 2018·Granted Nov 26, 2019·1 cites·15 claims
- 1068US11538908B2Semiconductor deviceNexperia BV·Filed 2015·Granted Dec 27, 2022·2 cites·15 claims
- 1167US8242500B2Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistorMEUNIER-BEILLARD PHILIPPE·Filed 2011·Granted Aug 14, 2012·2 cites·5 claims
- 1267US7074685B2Method of fabrication SiGe heterojunction bipolar transistorKONINKL PHILIPS ELECTRONICS NV·Filed 2003·Granted Jul 11, 2006·13 cites·10 claims
- 1366US10158002B2Semiconductor switch deviceNXP BV·Filed 2017·Granted Dec 18, 2018·1 cites·15 claims
- 1466US9929263B2Semiconductor device and method of making a semiconductor deviceNexperia BV·Filed 2016·Granted Mar 27, 2018·1 cites·13 claims
- 1565US8871599B2Method of manufacturing IC comprising a bipolar transistor and ICDONKERS JOHANNES JOSEPHUS THEODORUS MARINUS·Filed 2012·Granted Oct 28, 2014·2 cites·13 claims
- 1664US8872237B2Heterojunction bipolar transistor manufacturing method and integrated circuit comprising a heterojunction bipolar transistorVANHOUCKE TONY·Filed 2011·Granted Oct 28, 2014·2 cites·5 claims
- 1762US8686424B2Bipolar transistor manufacturing method, bipolar transistor and integrated circuitGRIDELET EVELYNE·Filed 2012·Granted Apr 1, 2014·1 cites·7 claims
- 1862US8133791B2Method of manufacturing a bipolar transistor and bipolar transistor obtained therewithHIJZEN ERWIN B·Filed 2007·Granted Mar 13, 2012·6 cites·22 claims
- 1961US2024332405A1Methods of fabricating a si bjt, and corresponding devicesNXP BV·Filed 2024·Application pending·0 cites
- 2060US9111987B2Method of manufacturing a bipolar transistor, bipolar transistor and integrated circuitNXP BV·Filed 2014·Granted Aug 18, 2015·1 cites·14 claims
- 2160US8524551B2Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistorMEUNIER-BEILLARD PHILIPPE·Filed 2012·Granted Sep 3, 2013·1 cites·9 claims
- 2260US7939416B2Method of making bipolar transistorNXP BV·Filed 2009·Granted May 10, 2011·2 cites·12 claims
- 2358US12501634B2Method for forming a transistor with a conductivity doped base structureNXP USA INC·Filed 2022·Granted Dec 16, 2025·0 cites·19 claims
- 2458US2025098189A1Bipolar transistor and method of making a bipolar transistorNXP BV·Filed 2024·Application pending·0 cites
- 2557US12107143B2Semiconductor device with extrinsic base region and method of fabrication thereforNXP BV·Filed 2022·Granted Oct 1, 2024·0 cites·18 claims
- 2656US2025254900A1Semiconductor device with monocrystalline extrinsic baseNXP BV·Filed 2024·Application pending·0 cites
- 2755US2025338518A1Patterned deep trench isolation for passive devicesNXP BV·Filed 2024·Application pending·0 cites
- 2854US2024304707A1Sige hbt and methods of manufacturing the sameNXP BV·Filed 2024·Application pending·0 cites
- 2953US9431524B2Method of manufacturing IC comprising a bipolar transistor and ICNXP BV·Filed 2014·Granted Aug 30, 2016·0 cites·7 claims
- 3053US8946042B2Bipolar transistor manufacturing method, bipolar transistor and integrated circuitNXP BV·Filed 2014·Granted Feb 3, 2015·0 cites·8 claims
- 3153US2024178304A1Semiconductor device with a monocrystalline extrinsic base and method thereforNXP BV·Filed 2022·Application pending·0 cites
- 3251US11855173B2Transistor with monocrystalline base structuresNXP USA INC·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3351US11018230B1Semiconductor devices with a mixed crystal regionNXP BV·Filed 2019·Granted May 25, 2021·0 cites·18 claims
- 3451US9064847B2Heterojunction semiconductor device with conductive barrier portion and manufacturing methodNXP BV·Filed 2013·Granted Jun 23, 2015·0 cites·9 claims
- 3551US2025081486A1Utilization of sacrificial material for current electrode formationNXP BV·Filed 2023·Application pending·0 cites
- 3651US2025048663A1Bipolar transistor and method of making a bipolar transistorNXP BV·Filed 2024·Application pending·0 cites
- 3750US11990536B2Bipolar transistors with multilayer collectorsNXP BV·Filed 2021·Granted May 21, 2024·0 cites·16 claims
- 3846US9349819B2Heterojunction semiconductor device and manufacturing methodNXP BV·Filed 2015·Granted May 24, 2016·0 cites·5 claims
- 3944US9041149B2Gringo heterojunction bipolar transistor with a metal extrinsic base regionBOCCARDI GUILLAUME·Filed 2009·Granted May 26, 2015·1 cites·17 claims
- 4043US10403747B2Gallium nitride/ aluminum gallium nitride semiconductor device and method of making a gallium nitride/ aluminum gallium nitride semiconductor deviceNexperia BV·Filed 2016·Granted Sep 3, 2019·0 cites·13 claims
- 4142US9018681B2Method of manufacturing a bipolar transistor and bipolar transistorGRIDELET EVELYNE·Filed 2011·Granted Apr 28, 2015·0 cites·15 claims
- 4241US10566423B2Semiconductor switch device and a method of making a semiconductor switch deviceNXP BV·Filed 2016·Granted Feb 18, 2020·0 cites·13 claims
- 4341US8963219B2Tunnel field effect transistorCURATOLA GILBERTO·Filed 2011·Granted Feb 24, 2015·0 cites·21 claims
- 4441US2010047987A1Method of fabricating a bipolar transistorNXP BV·Filed 2006·Application pending·0 cites
- 4540US10784257B2Integrating silicon-BJT to a silicon-germanium-HBT manufacturing processNXP BV·Filed 2018·Granted Sep 22, 2020·0 cites·13 claims
- 4640US10157809B2Semiconductor device and method of making a semiconductor device with passivation layers providing tuned resistanceNexperia BV·Filed 2016·Granted Dec 18, 2018·0 cites·14 claims
- 4739US8704335B2Spacer formation in the fabrication of planar bipolar transistorsVANHOUCKE TONY·Filed 2011·Granted Apr 22, 2014·0 cites·18 claims
- 4839US8592228B2Sealing structure and method of manufacturing the sameDONKERS JOHANNES·Filed 2007·Granted Nov 26, 2013·0 cites·18 claims
- 4938US8803156B2Heterojunction biopolar transistor and manufacturing methodVANHOUCKE TONY·Filed 2011·Granted Aug 12, 2014·0 cites·18 claims
- 5038US2008237871A1Method of Manufacturing a Semiconductor Device and Semiconductor Device Obtained With Such a MethodNXP BV·Filed 2006·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Johannes Josephus Theodorus Marinus Donkers files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →