Inventor · disambiguated record
Chen-Ming Lee
Also filed as: LEE CHEN · LEE CHEN-MING · LEE CHEN-MING B
108 granted patents·58 pending applications·202 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD158WANG WEI-CHENG2FIH CO LTD1GLOBAL UNICHIP CORP1I/O INTERCONNECT LTD1
Top patents by PatentIndex Score
166 records- 0198US12068200B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·5 cites·20 claims
- 0298US11615987B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
- 0397US11362003B2Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·4 cites·20 claims
- 0497US11302802B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·4 cites·20 claims
- 0597US10177038B1Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 8, 2019·17 cites·20 claims
- 0697US9685439B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·16 cites·20 claims
- 0797US9647116B1Method for fabricating self-aligned contact in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·19 cites·20 claims
- 0896US12068378B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·2 cites·20 claims
- 0996US11855169B2Silicide structures in transistors and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 1096US11798996B2Backside contact with air spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·2 cites·20 claims
- 1196US11784222B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
- 1296US11450572B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
- 1396US10121675B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 6, 2018·10 cites·20 claims
- 1495US11935932B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
- 1595US11876135B2Epitaxial source/drain structures for multigate devices and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 16, 2024·2 cites·20 claims
- 1695US10504990B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
- 1794US12464806B2Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·1 cites·20 claims
- 1894US11791387B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 1994US11398553B2Source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·3 cites·20 claims
- 2094US10825737B2Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·7 cites·20 claims
- 2193US11749719B2Source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·2 cites·20 claims
- 2293US11728394B2Method of forming backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 2393US11132031B2Electronic deviceLIN CHE HSIEN·Filed 2020·Granted Sep 28, 2021·5 cites·10 claims
- 2493US10490459B2Method for source/drain contact formation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·6 cites·20 claims
- 2592US11569364B2Silicide backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
- 2692US11387331B2Source/drain contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·19 claims
- 2792US10943818B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·6 cites·20 claims
- 2892US10930564B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·7 cites·20 claims
- 2992US2025357210A1Methods For Reducing Contact Depth Variation In Semiconductor FabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3091US11532504B2Low-resistance contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 3191US9437495B2Mask-less dual silicide processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·13 cites·20 claims
- 3290US11289383B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 3389US12266703B2Dielectric structures for semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 1, 2025·1 cites·20 claims
- 3489US11037924B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 15, 2021·4 cites·20 claims
- 3588US12009363B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·1 cites·20 claims
- 3688US10475788B2Fin field effect transistor (FinFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·20 claims
- 3787US2025359137A1Disposable Hard Mask for Interconnect FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3886US11728397B2Integrated circuits having protruding interconnect conductorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·1 cites·20 claims
- 3986US2024363429A1Prevention of contact bottom void in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4085US9520327B2Methods of forming low resistance contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·4 cites·20 claims
- 4185US2025349546A1Contact resistance reduction for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4284US12243940B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 4384US12224330B2Silicide structures in transistors and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 4484US12125879B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 4584US11735474B2Fin field effect transistor (FinFET) device structure with protection layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 22, 2023·1 cites·20 claims
- 4684US11239309B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 1, 2022·2 cites·20 claims
- 4784US10872781B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 22, 2020·1 cites·18 claims
- 4884US2024379762A1Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4983US12283630B2Epitaxial source/drain structures for multigate devices and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 5083US12068396B2Parasitic capacitance reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
Showing the top 50 of 166 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →