Inventor · disambiguated record
Gabriel Padron Wells
Also filed as: WELLS GABRIEL PADRON
7 granted patents·2 pending applications·521 citations·filing 2013–2016
86Inventor score
Top patents by PatentIndex Score
9 records- 0197US9276064B1Fabricating stacked nanowire, field-effect transistorsGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 1, 2016·68 cites·20 claims
- 0296US9252238B1Semiconductor structures with coplanar recessed gate layers and fabrication methodsGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 2, 2016·427 cites·20 claims
- 0386US9640625B2Self-aligned gate contact formationGLOBALFOUNDRIES INC·Filed 2014·Granted May 2, 2017·8 cites·14 claims
- 0485US9147680B2Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 29, 2015·10 cites·19 claims
- 0584US9443931B2Fabricating stacked nanowire, field-effect transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 13, 2016·3 cites·20 claims
- 0677US9305785B2Semiconductor contacts and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 5, 2016·4 cites·20 claims
- 0765US9460963B2Self-aligned contacts and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 4, 2016·1 cites·17 claims
- 0841US2015303295A1Self-aligned contact openings over fins of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 0939US2015024584A1Methods for forming integrated circuits with reduced replacement metal gate height variabilityGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →