Inventor · disambiguated record
Yujie Ai
Also filed as: AI YUJIE
8 granted patents·2 pending applications·36 citations·filing 2010–2012
83Inventor score
Files withHUANG RU10
Top patents by PatentIndex Score
10 records- 0184US8564031B2High voltage-resistant lateral double-diffused transistor based on nanowire deviceHUANG RU·Filed 2011·Granted Oct 22, 2013·9 cites·7 claims
- 0284US8513067B2Fabrication method for surrounding gate silicon nanowire transistor with air as spacersHUANG RU·Filed 2011·Granted Aug 20, 2013·10 cites·9 claims
- 0373US8598636B2Heat dissipation structure of SOI field effect transistorHUANG RU·Filed 2011·Granted Dec 3, 2013·5 cites·10 claims
- 0471US8288238B2Method for fabricating a tunneling field-effect transistorHUANG RU·Filed 2010·Granted Oct 16, 2012·5 cites·10 claims
- 0568US8563370B2Method for fabricating surrounding-gate silicon nanowire transistor with air sidewallsHUANG RU·Filed 2011·Granted Oct 22, 2013·3 cites·9 claims
- 0662US8901644B2Field effect transistor with a vertical channel and fabrication method thereofHUANG RU·Filed 2011·Granted Dec 2, 2014·2 cites·7 claims
- 0756US9034702B2Method for fabricating silicon nanowire field effect transistor based on wet etchingHUANG RU·Filed 2011·Granted May 19, 2015·1 cites·8 claims
- 0856US8592276B2Fabrication method of vertical silicon nanowire field effect transistorHUANG RU·Filed 2011·Granted Nov 26, 2013·1 cites·9 claims
- 0936US2013130503A1Method for fabricating ultra-fine nanowireHUANG RU·Filed 2012·Application pending·0 cites
- 1034US2012238097A1Method for fabricating fine lineHUANG RU·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →