Inventor · disambiguated record
Hormazdyar M. Dalal
Also filed as: DALAL HORMAZDYAR M · DALAL HORMAZDYAR MINOCHER
45 granted patents·2 pending applications·4,041 citations·filing 1977–2012
99Inventor score
Top patents by PatentIndex Score
47 records- 0198US5729896AMethod for attaching a flip chip on flexible circuit carrier using chip with metallic cap on solderIBM·Filed 1996·Granted Mar 24, 1998·185 cites·37 claims
- 0298US5585673ARefractory metal capped low resistivity metal conductor lines and viasIBM·Filed 1994·Granted Dec 17, 1996·174 cites·9 claims
- 0398US5300813ARefractory metal capped low resistivity metal conductor lines and viasIBM·Filed 1992·Granted Apr 5, 1994·155 cites·9 claims
- 0497US6734090B2Method of making an edge seal for a semiconductor deviceIBM·Filed 2002·Granted May 11, 2004·605 cites·9 claims
- 0597US6618267B1Multi-level electronic package and method for making sameIBM·Filed 1998·Granted Sep 9, 2003·201 cites·28 claims
- 0696US6336262B1Process of forming a capacitor with multi-level interconnection technologyIBM·Filed 1997·Granted Jan 8, 2002·174 cites·26 claims
- 0796US6069068ASub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivityIBM·Filed 1997·Granted May 30, 2000·224 cites·12 claims
- 0896US5403779ARefractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVDIBM·Filed 1992·Granted Apr 4, 1995·103 cites·37 claims
- 0995US5796591ADirect chip attach circuit cardIBM·Filed 1995·Granted Aug 18, 1998·205 cites·27 claims
- 1095US5634268AMethod for making direct chip attach circuit cardIBM·Filed 1995·Granted Jun 3, 1997·131 cites·36 claims
- 1195US4831494AMultilayer capacitorIBM·Filed 1988·Granted May 16, 1989·232 cites·49 claims
- 1295US4215156AMethod for fabricating tantalum semiconductor contactsIBM·Filed 1977·Granted Jul 29, 1980·148 cites·20 claims
- 1394US6323554B1Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVDIBM·Filed 1998·Granted Nov 27, 2001·117 cites·18 claims
- 1493US6033939AMethod for providing electrically fusible links in copper interconnectionIBM·Filed 1998·Granted Mar 7, 2000·152 cites·13 claims
- 1593US5426330ARefractory metal capped low resistivity metal conductor lines and viasIBM·Filed 1993·Granted Jun 20, 1995·64 cites·4 claims
- 1691US6130161AMethod of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivityIBM·Filed 1997·Granted Oct 10, 2000·111 cites·13 claims
- 1791US5889328ARefractory metal capped low resistivity metal conductor lines and viasIBM·Filed 1996·Granted Mar 30, 1999·78 cites·14 claims
- 1887US6348731B1Copper interconnections with enhanced electromigration resistance and reduced defect sensitivity and method of forming sameIBM·Filed 1999·Granted Feb 19, 2002·77 cites·5 claims
- 1987US6287954B1Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivityIBM·Filed 1999·Granted Sep 11, 2001·71 cites·15 claims
- 2086US5976975ARefractory metal capped low resistivity metal conductor lines and viasIBM·Filed 1998·Granted Nov 2, 1999·51 cites·18 claims
- 2183US4214256ATantalum semiconductor contacts and method for fabricating sameIBM·Filed 1978·Granted Jul 22, 1980·28 cites·6 claims
- 2282US7800239B2Thick metal interconnect with metal pad caps at selective sites and process for making the sameSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Sep 21, 2010·10 cites·40 claims
- 2382US6972209B2Stacked via-stud with improved reliability in copper metallurgyIBM·Filed 2002·Granted Dec 6, 2005·32 cites·8 claims
- 2481US6344234B1Method for forming reflowed solder ball with low melting point metal capIBM·Filed 1995·Granted Feb 5, 2002·56 cites·26 claims
- 2580US7163883B2Edge seal for a semiconductor deviceIBM·Filed 2003·Granted Jan 16, 2007·27 cites·6 claims
- 2680US6147402ARefractory metal capped low resistivity metal conductor lines and viasIBM·Filed 1998·Granted Nov 14, 2000·34 cites·27 claims
- 2780US5470788AMethod of making self-aligned, lateral diffusion barrier in metal lines to eliminate electromigrationIBM·Filed 1994·Granted Nov 28, 1995·66 cites·12 claims
- 2879US6133139ASelf-aligned composite insulator with sub-half-micron multilevel high density electrical interconnections and process thereofIBM·Filed 1997·Granted Oct 17, 2000·51 cites·33 claims
- 2978US5922496ASelective deposition mask and method for making the sameIBM·Filed 1997·Granted Jul 13, 1999·41 cites·14 claims
- 3077US7947592B2Thick metal interconnect with metal pad caps at selective sites and process for making the sameSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted May 24, 2011·7 cites·23 claims
- 3174US5808853ACapacitor with multi-level interconnection technologyIBM·Filed 1997·Granted Sep 15, 1998·38 cites·22 claims
- 3273US6258710B1Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivityIBM·Filed 1999·Granted Jul 10, 2001·39 cites·9 claims
- 3372US6259159B1Reflowed solder ball with low melting point metal capIBM·Filed 1997·Granted Jul 10, 2001·49 cites·17 claims
- 3472US5976970AMethod of making and laterally filling key hole structure for ultra fine pitch conductor linesIBM·Filed 1996·Granted Nov 2, 1999·43 cites·11 claims
- 3570US5434451ATungsten liner process for simultaneous formation of integral contact studs and interconnect linesIBM·Filed 1993·Granted Jul 18, 1995·44 cites·17 claims
- 3669US6051273AMethod for forming features upon a substrateIBM·Filed 1997·Granted Apr 18, 2000·38 cites·8 claims
- 3768US5981374ASub-half-micron multi-level interconnection structure and process thereofIBM·Filed 1997·Granted Nov 9, 1999·37 cites·30 claims
- 3866US4379832AMethod for making low barrier Schottky devices of the electron beam evaporation of reactive metalsIBM·Filed 1981·Granted Apr 12, 1983·34 cites·10 claims
- 3964US6597067B1Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigrationIBM·Filed 1997·Granted Jul 22, 2003·36 cites·19 claims
- 4064US6294835B1Self-aligned composite insulator with sub-half-micron multilevel high density electrical interconnections and process thereofIBM·Filed 1999·Granted Sep 25, 2001·26 cites·12 claims
- 4162US8129266B2Method of forming a shielded semiconductor device and structure thereforDALAL HORMAZDYAR M·Filed 2008·Granted Mar 6, 2012·4 cites·11 claims
- 4256US5427983AProcess for corrosion free multi-layer metal conductorsIBM·Filed 1992·Granted Jun 27, 1995·21 cites·12 claims
- 4355US8536685B2Shielded semiconductor device structureDALAL HORMAZDYAR M·Filed 2012·Granted Sep 17, 2013·1 cites·9 claims
- 4447US5401677AMethod of metal silicide formation in integrated circuit devicesIBM·Filed 1993·Granted Mar 28, 1995·12 cites·6 claims
- 4546US2006014376A1Stacked via-stud with improved reliability in copper metallurgyIBM·Filed 2005·Application pending·0 cites
- 4643US6203926B1Corrosion-free multi-layer conductorIBM·Filed 1999·Granted Mar 20, 2001·9 cites·14 claims
- 4730US2001013423A1Flip chip attach on flexible circuit carrier using chip with metallic cap on solderFiled 1997·Application pending·0 cites
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