Inventor · disambiguated record
William U. Liu
Also filed as: LIU WILLIAM U · LIU WILLIAM U C · LIU WILLIAM UEI-CHUNG · LIU WILLIAM UEI-CHUNT
18 granted patents·419 citations·filing 1991–1999
96Inventor score
Top patents by PatentIndex Score
18 records- 0187US6124627ALateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain regionTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 26, 2000·72 cites·4 claims
- 0283US6187641B1Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain regionTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 13, 2001·54 cites·16 claims
- 0375US5298439A1/f noise reduction in heterojunction bipolar transistorsTEXAS INSTRUMENTS INC·Filed 1992·Granted Mar 29, 1994·37 cites·20 claims
- 0473US5389554AMethod for fabricating microwave heterojunction bipolar transistors with emitters designed for high power applicationsTEXAS INSTRUMENTS INC·Filed 1993·Granted Feb 14, 1995·28 cites·8 claims
- 0572US5270223AMultiple layer wide bandgap collector structure for bipolar transistorsTEXAS INSTRUMENTS INC·Filed 1991·Granted Dec 14, 1993·28 cites·16 claims
- 0670US5552617ABipolar transistorTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 3, 1996·26 cites·16 claims
- 0768US5616950AThermally uniform transistorTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 1, 1997·30 cites·13 claims
- 0865US5571732AMethod for fabricating a bipolar transistorTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 5, 1996·31 cites·10 claims
- 0964US5702958AMethod for the fabrication of bipolar transistorsTEXAS INSTRUMENTS INC·Filed 1994·Granted Dec 30, 1997·23 cites·12 claims
- 1057US5850099AThermally uniform transistorTEXAS INSTRUMENTS INC·Filed 1993·Granted Dec 15, 1998·21 cites·9 claims
- 1153US5171697AMethod of forming multiple layer collector structure for bipolar transistorsTEXAS INSTRUMENTS INC·Filed 1991·Granted Dec 15, 1992·14 cites·14 claims
- 1248US5684310AMultiple layer wide bandgap collector structure for bipolar transistorsTEXAS INSTRUMENTS INC·Filed 1993·Granted Nov 4, 1997·10 cites·23 claims
- 1346US6025615AMicrowave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating sameTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 15, 2000·8 cites·16 claims
- 1445US5455440AMethod to reduce emitter-base leakage current in bipolar transistorsTEXAS INSTRUMENTS INC·Filed 1994·Granted Oct 3, 1995·10 cites·16 claims
- 1542US5330932AMethod for fabricating GaInP/GaAs structuresTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 19, 1994·12 cites·24 claims
- 1638US5525817ABipolar transistorTEXAS INSTRUMENTS INC·Filed 1993·Granted Jun 11, 1996·7 cites·20 claims
- 1736US6159816AMethod of fabricating a bipolar transistorTRIQUINT SEMICONDUCTOR TEXAS I·Filed 1995·Granted Dec 12, 2000·6 cites·7 claims
- 1831US5278083AMethod for making reliable connections to small features of integrated circuitsTEXAS INSTRUMENTS INC·Filed 1992·Granted Jan 11, 1994·2 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →