Inventor · disambiguated record
Wei-Su Chen
Also filed as: CHEN WEI · CHEN WEI-SU
37 granted patents·7 pending applications·202 citations·filing 2002–2019
97Inventor score
Files withIND TECH RES INST15MICRON TECHNOLOGY INC15CHEN WEI-SU7PROMOS TECHNOLOGIES INC3CHEN FREDERICK T2
Top patents by PatentIndex Score
44 records- 0191US9680089B1Magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 13, 2017·9 cites·24 claims
- 0286US8212231B2Resistive memory device with an air gapCHEN WEI-SU·Filed 2009·Granted Jul 3, 2012·9 cites·7 claims
- 0385US8241990B2Air gap fabricating methodCHEN WEI-SU·Filed 2009·Granted Aug 14, 2012·8 cites·26 claims
- 0485US8063393B2Memory devices, stylus-shaped structures, electronic apparatuses, and methods for fabricating the sameCHEN WEI-SU·Filed 2008·Granted Nov 22, 2011·11 cites·25 claims
- 0584US6830981B2Vertical nanotube transistor and process for fabricating the sameIND TECH RES INST·Filed 2002·Granted Dec 14, 2004·43 cites·14 claims
- 0682US7732801B2Phase change memory devicePROMOS TECHNOLOGIES INC·Filed 2007·Granted Jun 8, 2010·9 cites·20 claims
- 0782US7427459B2Recticle pattern applied to mix-and-match lithography process and alignment method of thereofIND TECH RES INST·Filed 2006·Granted Sep 23, 2008·6 cites·17 claims
- 0881US9257641B2Via structure, memory array structure, three-dimensional resistance memory and method of forming the sameIND TECH RES INST·Filed 2014·Granted Feb 9, 2016·4 cites·37 claims
- 0980US7728320B2Semiconductor memory device and phase change memory deviceIND TECH RES INST·Filed 2006·Granted Jun 1, 2010·8 cites·9 claims
- 1080US7566895B2Phase change memory device and method for fabricating the sameIND TECH RES INST·Filed 2007·Granted Jul 28, 2009·12 cites·17 claims
- 1179US7989795B2Phase change memory device and method for fabricating the samePROMOS TECHNOLOGIES INC·Filed 2007·Granted Aug 2, 2011·10 cites·40 claims
- 1278US9379315B2Memory cells, methods of fabrication, semiconductor device structures, and memory systemsMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 28, 2016·4 cites·17 claims
- 1378US7626191B2Lateral phase change memory with spacer electrodesIND TECH RES INST·Filed 2006·Granted Dec 1, 2009·10 cites·8 claims
- 1476US7687377B2Method of fabricating phase change memory deviceIND TECH RES INST·Filed 2009·Granted Mar 30, 2010·6 cites·10 claims
- 1574US9537088B1Magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 3, 2017·4 cites·13 claims
- 1674US7851253B2Phase change memory device and fabricating methodPROMOS TECHNOLOGIES INC·Filed 2008·Granted Dec 14, 2010·5 cites·6 claims
- 1773US9478735B1Magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 25, 2016·2 cites·10 claims
- 1872US8198620B2Resistance switching memoryCHEN FREDERICK T·Filed 2009·Granted Jun 12, 2012·5 cites·19 claims
- 1972US7835177B2Phase change memory cell and method of fabricatingIND TECH RES INST·Filed 2006·Granted Nov 16, 2010·6 cites·9 claims
- 2070US7814566B2Tip array structure and fabricating method of tip structureIND TECH RES INST·Filed 2007·Granted Oct 12, 2010·2 cites·15 claims
- 2169US8072018B2Semiconductor device and method for fabricating the sameCHEN WEI-SU·Filed 2007·Granted Dec 6, 2011·3 cites·14 claims
- 2267US10276781B2Magnetoresistive structures, semiconductor devices, and related systemsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 30, 2019·1 cites·24 claims
- 2367US7932509B2Phase change memory elementIND TECH RES INST·Filed 2008·Granted Apr 26, 2011·3 cites·10 claims
- 2465US6822257B2Organic light emitting diode device with organic hole transporting material and phosphorescent materialRITDISPLAY CORP·Filed 2003·Granted Nov 23, 2004·11 cites·24 claims
- 2559US7598113B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2006·Granted Oct 6, 2009·1 cites·15 claims
- 2658US6734074B2Micro fabrication with vortex shaped spirally topographically tapered spirally patterned conductor layer and method for fabrication thereofIND TECH RES INST·Filed 2002·Granted May 11, 2004·10 cites·10 claims
- 2754US10651367B2Electronic devices and related electronic systemsMICRON TECHNOLOGY INC·Filed 2018·Granted May 12, 2020·0 cites·21 claims
- 2854US7868314B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2009·Granted Jan 11, 2011·0 cites·12 claims
- 2953US9373779B1Magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2014·Granted Jun 21, 2016·0 cites·33 claims
- 3052US10374149B2Magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 6, 2019·0 cites·2 claims
- 3150US10720569B2Magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 21, 2020·0 cites·6 claims
- 3250US10062835B2Magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 28, 2018·0 cites·9 claims
- 3350US9344345B2Memory cells having a self-aligning polarizerMICRON TECHNOLOGY INC·Filed 2014·Granted May 17, 2016·0 cites·20 claims
- 3448US9972770B2Methods of forming memory cells, arrays of magnetic memory cells, and semiconductor devicesMICRON TECHNOLOGY INC·Filed 2016·Granted May 15, 2018·0 cites·20 claims
- 3547US2013087757A1Resistive memory device and method of manufacturing the sameCHEN WEI-SU·Filed 2011·Application pending·0 cites
- 3646US10134978B2Magnetic cell structures, and methods of fabricationMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 20, 2018·0 cites·16 claims
- 3746US9768377B2Magnetic cell structures, and methods of fabricationMICRON TECHNOLOGY INC·Filed 2014·Granted Sep 19, 2017·0 cites·19 claims
- 3845US2013320289A1Resistance random access memory and method of fabricating the sameCHEN WEI-SU·Filed 2012·Application pending·0 cites
- 3944US2007291533A1Phase change memory device and fabrication method thereofIND TECH RES INST·Filed 2007·Application pending·0 cites
- 4044US2011155993A1Phase change memory devices and fabrication methods thereofIND TECH RES INST·Filed 2010·Application pending·0 cites
- 4139US9960346B2Magnetic tunnel junctionsMICRON TECHNOLOGY INC·Filed 2015·Granted May 1, 2018·0 cites·29 claims
- 4236US2007148862A1Phase-change memory layer and method of manufacturing the same and phase-change memory cellCHEN YI-CHAN·Filed 2006·Application pending·0 cites
- 4333US2005274943A1Organic bistable memory and method of manufacturing the sameCHEN WEI-SU·Filed 2004·Application pending·0 cites
- 4433US2014077149A1Resistance memory cell, resistance memory array and method of forming the sameCHEN FREDERICK T·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →