Inventor · disambiguated record
Kyung-Woo Nam
Also filed as: NAM KYUNG-WOO
15 granted patents·215 citations·filing 1999–2010
93Inventor score
Top patents by PatentIndex Score
15 records- 0197US7840762B2Multi-path accessible semiconductor memory device having mailbox areas and mailbox access control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 23, 2010·94 cites·30 claims
- 0283US6847572B2Refresh control circuit and methods of operation and control of the refresh control circuitSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 25, 2005·34 cites·23 claims
- 0376US7555625B2Multi-memory chip and data transfer method capable of directly transferring data between internal memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 30, 2009·8 cites·15 claims
- 0470US6633995B1System for generating N pipeline control signals by delaying at least one control signal corresponding to a subsequent data path circuitSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 14, 2003·19 cites·13 claims
- 0567US6542425B2Refresh control circuit for controlling refresh cycles according to values stored in a register and related refreshing methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 1, 2003·16 cites·18 claims
- 0662US7440352B2Semiconductor memory device capable of selectively refreshing word linesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 21, 2008·5 cites·9 claims
- 0757US6108244ASynchronous memory devices having dual port capability for graphics and other applicationsSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Aug 22, 2000·16 cites·14 claims
- 0855US8166238B2Method, device, and system for preventing refresh starvation in shared memory bankLEE DONG-HYUK·Filed 2007·Granted Apr 24, 2012·3 cites·23 claims
- 0952US8122199B2Multi port memory device with shared memory area using latch type memory cells and driving methodKWON JIN-HYOUNG·Filed 2009·Granted Feb 21, 2012·3 cites·15 claims
- 1051US7573772B2Semiconductor memory device and self-refresh method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 11, 2009·2 cites·10 claims
- 1151US7095670B2Semiconductor memory having variable memory size and method for refreshing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 22, 2006·7 cites·33 claims
- 1250US7385859B2Semiconductor memory devices and methods for generating column enable signals thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 10, 2008·2 cites·20 claims
- 1343US8019948B2Multi-path accessible semiconductor memory device having mailbox areas and mailbox access control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 13, 2011·0 cites·13 claims
- 1441US6928016B2Refresh type semiconductor memory device having refresh circuit for minimizing refresh fail at high speed operationSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·4 cites·8 claims
- 1539US7068559B2Word line enable timing determination circuit of a memory device and methods of determining word line enable timing in the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 27, 2006·2 cites·28 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →