Inventor · disambiguated record
Thomas A. Wallner
Also filed as: WALLNER THOMAS · WALLNER THOMAS A · WALLNER THOMAS ANTHONY
19 granted patents·8 pending applications·83 citations·filing 2005–2021
93Inventor score
Top patents by PatentIndex Score
27 records- 0188US7342293B2Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming sameIBM·Filed 2005·Granted Mar 11, 2008·15 cites·20 claims
- 0287US9171935B2FinFET formation with late fin revealIBM·Filed 2014·Granted Oct 27, 2015·9 cites·20 claims
- 0386US8232172B2Stress enhanced transistor devices and methods of makingADAM THOMAS N·Filed 2011·Granted Jul 31, 2012·6 cites·6 claims
- 0486US8129234B2Method of forming bipolar transistor integrated with metal gate CMOS devicesWALLNER THOMAS A·Filed 2009·Granted Mar 6, 2012·14 cites·12 claims
- 0580US9412843B2Method for embedded diamond-shaped stress elementIBM·Filed 2014·Granted Aug 9, 2016·4 cites·20 claims
- 0680US7521772B2Monocrystalline extrinsic base and emitter heterojunction bipolar transistor and related methodsIBM·Filed 2006·Granted Apr 21, 2009·8 cites·5 claims
- 0778US8062951B2Method to increase effective MOSFET widthCHEN XIANGDONG·Filed 2007·Granted Nov 22, 2011·8 cites·8 claims
- 0874US8916426B2Passive devices for FinFET integrated circuit technologiesCLARK JR WILLIAM F·Filed 2012·Granted Dec 23, 2014·3 cites·11 claims
- 0973US8946064B2Transistor with buried silicon germanium for improved proximity control and optimized recess shapeADAM THOMAS N·Filed 2011·Granted Feb 3, 2015·3 cites·8 claims
- 1071US7511317B2Porous silicon for isolation region formation and related structureIBM·Filed 2006·Granted Mar 31, 2009·4 cites·4 claims
- 1167US10297086B2System and method for processing digital videoDEEP INC CANADA·Filed 2017·Granted May 21, 2019·2 cites·23 claims
- 1267US8787074B2Static random access memory test structurePATTERSON OLIVER D·Filed 2011·Granted Jul 22, 2014·2 cites·20 claims
- 1366US10460501B2System and method for processing digital videoDEEP INC CANADA·Filed 2016·Granted Oct 29, 2019·2 cites·43 claims
- 1463US7858485B2Structure and method for manufacturing trench capacitanceIBM·Filed 2008·Granted Dec 28, 2010·2 cites·9 claims
- 1557US9236398B2Passive devices for FinFET integrated circuit technologiesGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·0 cites·15 claims
- 1655US8124534B2Multiple exposure and single etch integration methodWALLNER JIN·Filed 2008·Granted Feb 28, 2012·1 cites·24 claims
- 1754US2009302348A1Stress enhanced transistor devices and methods of makingIBM·Filed 2008·Application pending·0 cites
- 1850US10863160B2Conditional forced perspective in spherical videoLIQUID CINEMA INC CANADA·Filed 2019·Granted Dec 8, 2020·0 cites·8 claims
- 1948US2010200896A1Embedded stress elements on surface thin direct silicon bond substratesIBM·Filed 2009·Application pending·0 cites
- 2047US2012326168A1Transistor with buried silicon germanium for improved proximity control and optimized recess shapeADAM THOMAS N·Filed 2012·Application pending·0 cites
- 2147US2009294872A1Ge/Xe IMPLANTS TO REDUCE JUNCTION CAPACITANCE AND LEAKAGEIBM·Filed 2008·Application pending·0 cites
- 2246US11668758B2High impedance cell detectionMEDTRONIC INC·Filed 2021·Granted Jun 6, 2023·0 cites·22 claims
- 2346US8569840B2Bipolar transistor integrated with metal gate CMOS devicesWALLNER THOMAS A·Filed 2012·Granted Oct 29, 2013·0 cites·20 claims
- 2443US2021076021A1Conditional forced perspective in spherical videoLIQUID CINEMA INC CANADA·Filed 2020·Application pending·0 cites
- 2542US2009242989A1Complementary metal-oxide-semiconductor device with embedded stressorCHAN KEVIN K·Filed 2008·Application pending·0 cites
- 2640US2008121937A1Heterojunction bipolar transistor with monocrystalline base and related methodsIBM·Filed 2006·Application pending·0 cites
- 2731US2020005831A1Systems and methods for processing digital videoLIQUID CINEMA INC CANADA·Filed 2018·Application pending·0 cites
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