Inventor · disambiguated record
Thomas N. Adam
Also filed as: ADAM THOMAS · ADAM THOMAS N
118 granted patents·39 pending applications·813 citations·filing 2004–2021
99Inventor score
Top patents by PatentIndex Score
157 records- 0198US9864138B2Integrated photonics including germaniumUNIV NEW YORK STATE RES FOUND·Filed 2016·Granted Jan 9, 2018·40 cites·36 claims
- 0298US8653599B1Strained SiGe nanowire having (111)-oriented sidewallsIBM·Filed 2012·Granted Feb 18, 2014·39 cites·25 claims
- 0397US9190471B2Semiconductor structure having a source and a drain with reverse facetsADAM THOMAS N·Filed 2012·Granted Nov 17, 2015·35 cites·11 claims
- 0496US10295745B2Integrated photonics including germaniumUNIV NEW YORK STATE RES FOUND·Filed 2018·Granted May 21, 2019·12 cites·20 claims
- 0596US8987069B1Semiconductor substrate with multiple SiGe regions having different germanium concentrations by a single epitaxy processIBM·Filed 2013·Granted Mar 24, 2015·24 cites·16 claims
- 0696US8841185B2High density bulk fin capacitorKHAKIFIROOZ ALI·Filed 2012·Granted Sep 23, 2014·30 cites·20 claims
- 0796US8652932B2Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structuresADAM THOMAS N·Filed 2012·Granted Feb 18, 2014·21 cites·7 claims
- 0895US8981493B2FinFET and method of fabricationIBM·Filed 2013·Granted Mar 17, 2015·17 cites·6 claims
- 0995US8946033B2Merged fin finFET with (100) sidewall surfaces and method of making sameADAM THOMAS N·Filed 2012·Granted Feb 3, 2015·21 cites·13 claims
- 1095US8728927B1Borderless contacts for semiconductor transistorsIBM·Filed 2012·Granted May 20, 2014·21 cites·25 claims
- 1194US9034741B2Halo region formation by epitaxial growthIBM·Filed 2013·Granted May 19, 2015·15 cites·20 claims
- 1294US8872172B2Embedded source/drains with epitaxial oxide underlayerIBM·Filed 2012·Granted Oct 28, 2014·16 cites·17 claims
- 1394US8709890B2Method and structure for forming ETSOI capacitors, diodes, resistors and back gate contactsCHENG KANGGUO·Filed 2011·Granted Apr 29, 2014·19 cites·20 claims
- 1493US9530843B2FinFET having an epitaxially grown semiconductor on the fin in the channel regionGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 27, 2016·7 cites·17 claims
- 1593US9048262B2Multi-fin finFETs with merged-fin source/drains and replacement gatesIBM·Filed 2013·Granted Jun 2, 2015·13 cites·16 claims
- 1693US8896063B2FinFET devices containing merged epitaxial Fin-containing contact regionsIBM·Filed 2013·Granted Nov 25, 2014·15 cites·16 claims
- 1793US8816436B2Method and structure for forming fin resistorsCHENG KANGGUO·Filed 2012·Granted Aug 26, 2014·16 cites·8 claims
- 1893US8674447B2Transistor with improved sigma-shaped embedded stressor and method of formationADAM THOMAS N·Filed 2012·Granted Mar 18, 2014·10 cites·20 claims
- 1992US9087687B2Thin heterostructure channel deviceADAM THOMAS N·Filed 2011·Granted Jul 21, 2015·10 cites·11 claims
- 2092US8673699B2Semiconductor structure having NFET extension last implantsADAM THOMAS N·Filed 2012·Granted Mar 18, 2014·17 cites·11 claims
- 2192US8361859B2Stressed transistor with improved metastabilityIBM·Filed 2010·Granted Jan 29, 2013·13 cites·15 claims
- 2292US7119416B1Bipolar transistor structure with self-aligned raised extrinsic base and methodsIBM·Filed 2005·Granted Oct 10, 2006·21 cites·6 claims
- 2391US8877604B2Device structure with increased contact area and reduced gate capacitanceIBM·Filed 2012·Granted Nov 4, 2014·10 cites·24 claims
- 2491US8841188B2Bulk finFET with controlled fin height and high-K linerREZNICEK ALEXANDER·Filed 2012·Granted Sep 23, 2014·16 cites·10 claims
- 2591US8592916B2Selectively raised source/drain transistorKHAKIFIROOZ ALI·Filed 2012·Granted Nov 26, 2013·13 cites·20 claims
- 2690US9673296B2Semiconductor structure having a source and a drain with reverse facetsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 6, 2017·5 cites·10 claims
- 2790US9219139B2Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structuresGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·8 cites·15 claims
- 2890US9190487B2Prevention of fin erosion for semiconductor devicesIBM·Filed 2014·Granted Nov 17, 2015·9 cites·10 claims
- 2990US9059207B2Strained channel for depleted channel semiconductor devicesADAM THOMAS N·Filed 2012·Granted Jun 16, 2015·7 cites·17 claims
- 3089US10830952B2Integrated photonics including germaniumUNIV NEW YORK STATE RES FOUND·Filed 2019·Granted Nov 10, 2020·3 cites·20 claims
- 3189US9035365B2Raised source/drain and gate portion with dielectric spacer or air gap spacerIBM·Filed 2013·Granted May 19, 2015·7 cites·13 claims
- 3289US8975125B2Formation of bulk SiGe fin with dielectric isolation by anodizationIBM·Filed 2013·Granted Mar 10, 2015·9 cites·16 claims
- 3389US7897444B2Strained semiconductor-on-insulator (sSOI) by a simox methodIBM·Filed 2009·Granted Mar 1, 2011·15 cites·7 claims
- 3488US9059139B2Raised source/drain and gate portion with dielectric spacer or air gap spacerIBM·Filed 2014·Granted Jun 16, 2015·6 cites·20 claims
- 3588US7342293B2Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming sameIBM·Filed 2005·Granted Mar 11, 2008·15 cites·20 claims
- 3687US11703643B2Integrated photonics including waveguiding materialUNIV NEW YORK STATE RES FOUND·Filed 2019·Granted Jul 18, 2023·2 cites·21 claims
- 3787US10571631B2Integrated photonics including waveguiding materialUNIV NEW YORK STATE RES FOUND·Filed 2016·Granted Feb 25, 2020·3 cites·56 claims
- 3887US9070771B2Bulk finFET with controlled fin height and high-k linerIBM·Filed 2014·Granted Jun 30, 2015·7 cites·14 claims
- 3987US9054218B2Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by sameIBM·Filed 2013·Granted Jun 9, 2015·6 cites·16 claims
- 4086US9059206B2Epitaxial grown extremely shallow extension regionIBM·Filed 2012·Granted Jun 16, 2015·8 cites·5 claims
- 4186US8232172B2Stress enhanced transistor devices and methods of makingADAM THOMAS N·Filed 2011·Granted Jul 31, 2012·6 cites·6 claims
- 4285US9281198B2Method of fabricating a semiconductor device including embedded crystalline back-gate bias planesGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 8, 2016·6 cites·19 claims
- 4385US8809920B2Prevention of fin erosion for semiconductor devicesIBM·Filed 2012·Granted Aug 19, 2014·6 cites·9 claims
- 4484US9093260B2Thin hetereostructure channel deviceADAM THOMAS N·Filed 2012·Granted Jul 28, 2015·5 cites·10 claims
- 4584US8889495B2Semiconductor alloy fin field effect transistorIBM·Filed 2012·Granted Nov 18, 2014·5 cites·20 claims
- 4684US8263468B2Thin body semiconductor devicesADAM THOMAS N·Filed 2010·Granted Sep 11, 2012·7 cites·14 claims
- 4784US7544577B2Mobility enhancement in SiGe heterojunction bipolar transistorsIBM·Filed 2005·Granted Jun 9, 2009·9 cites·17 claims
- 4883US8802513B2Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materialsIBM·Filed 2012·Granted Aug 12, 2014·5 cites·14 claims
- 4982US8642415B2Semiconductor substrate with transistors having different threshold voltagesADAM THOMAS N·Filed 2012·Granted Feb 4, 2014·5 cites·9 claims
- 5082US7037798B2Bipolar transistor structure with self-aligned raised extrinsic base and methodsIBM·Filed 2004·Granted May 2, 2006·26 cites·7 claims
Showing the top 50 of 157 patent records by PatentIndex Score.
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