Inventor · disambiguated record
Dong Joon Kim
Also filed as: KIM DONG J · KIM DONG JOON
64 granted patents·15 pending applications·2,126 citations·filing 1991–2022
99Inventor score
Files withSAMSUNG ELECTRO MECH16SAMSUNG ELECTRONICS CO LTD12MAGNACHIP SEMICONDUCTOR LTD8SAMSUNG LED CO LTD6HYNIX SEMICONDUCTOR INC4
Top patents by PatentIndex Score
79 records- 0198US8129711B2Nitride semiconductor light emitting device and fabrication method thereofKANG SANG WON·Filed 2008·Granted Mar 6, 2012·498 cites·8 claims
- 0298US7994525B2Nitride-based semiconductor light emitting diodeSAMSUNG LED CO LTD·Filed 2010·Granted Aug 9, 2011·477 cites·10 claims
- 0398US7084420B2Nitride based semiconductor deviceSAMSUNG ELECTRO MECH·Filed 2005·Granted Aug 1, 2006·488 cites·13 claims
- 0497US7173288B2Nitride semiconductor light emitting device having electrostatic discharge (ESD) protection capacitySAMSUNG ELECTRO MECH·Filed 2005·Granted Feb 6, 2007·77 cites·7 claims
- 0593US11098476B2Connecting core for column-beam joint and connection method using the sameGAURIAN CORP·Filed 2018·Granted Aug 24, 2021·46 cites·14 claims
- 0692US7187007B2Nitride semiconductor device and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2005·Granted Mar 6, 2007·40 cites·8 claims
- 0791US8440996B2Nitride semiconductor light emitting device and fabrication method thereofKANG SANG WON·Filed 2012·Granted May 14, 2013·6 cites·14 claims
- 0889US9000460B2Semiconductor light emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Apr 7, 2015·7 cites·13 claims
- 0989US6656841B1Method of forming multi layer conductive line in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 2, 2003·56 cites·8 claims
- 1088US7888670B2Nitride semiconductor light emitting deviceSAMSUNG LED CO LTD·Filed 2008·Granted Feb 15, 2011·16 cites·23 claims
- 1186US5612768AImage forming apparatus with an air ventilation structure for preventing contamination of charging deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Mar 18, 1997·39 cites·20 claims
- 1285US6438998B1Ultrasonic dispersion apparatus for silica solSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Aug 27, 2002·16 cites·24 claims
- 1384US7811902B2Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the sameSAMSUNG ELECTRO MECH·Filed 2008·Granted Oct 12, 2010·7 cites·12 claims
- 1483US8030640B2Nitride semiconductor light emitting device and method of manufacturing the sameSAMSUNG LED CO LTD·Filed 2009·Granted Oct 4, 2011·9 cites·16 claims
- 1583US7948043B2MEMS package that includes MEMS device wafer bonded to cap wafer and exposed array padsMAGNACHIP SEMICONDUCTOR LTD·Filed 2009·Granted May 24, 2011·7 cites·17 claims
- 1682US8227700B2Chip having side protection terminal and package using the chipKIM DONG-JOON·Filed 2009·Granted Jul 24, 2012·10 cites·7 claims
- 1779US6303404B1Method for fabricating white light emitting diode using InGaN phase separationFiled 1999·Granted Oct 16, 2001·74 cites·3 claims
- 1878US7557441B2Package of MEMS device and method for fabricating the sameMAGNACHIP SEMICONDUCTOR LTD·Filed 2007·Granted Jul 7, 2009·5 cites·14 claims
- 1977US7578456B2Method for preparing micron-sized ginseng powder via mechanical grindingCJ CHEILJEDANG CORP·Filed 2005·Granted Aug 25, 2009·2 cites·5 claims
- 2075US8135968B2Semiconductor apparatus including power management integrated circuitKIM DONG-JOON·Filed 2009·Granted Mar 13, 2012·7 cites·14 claims
- 2175US7893447B2Nitride-based semiconductor light emitting diodeSAMSUNG LED CO LTD·Filed 2008·Granted Feb 22, 2011·4 cites·8 claims
- 2275US2013214250A1Nitride based semiconductor light-emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2374US11852183B2Press-fit nut for assembly, press-fit nut-bolt assembly, and method of constructing steel-concrete composite structure using sameGAURIAN CO LTD·Filed 2020·Granted Dec 26, 2023·2 cites·12 claims
- 2474US8525196B2Nitride-based semiconductor light emitting diodeLEE HYUK MIN·Filed 2011·Granted Sep 3, 2013·2 cites·9 claims
- 2573US7763881B2Photonic crystal light emitting deviceSAMSUNG LED LTD·Filed 2008·Granted Jul 27, 2010·7 cites·10 claims
- 2672US9419206B2Magnetic sensor and method of fabricating the sameMAGNACHIP SEMICONDUCTOR LTD·Filed 2013·Granted Aug 16, 2016·2 cites·23 claims
- 2772US8866167B2Nitride semiconductor light emitting device and fabrication method thereofSAMSUNG ELECTONICS CO LTD·Filed 2013·Granted Oct 21, 2014·1 cites·17 claims
- 2872US7615394B2Method for fabricating MEMS device package that includes grinding MEMS device wafer to expose array pads corresponding to a cap waferMAGNACHIP SEMICONDUCTOR LTD·Filed 2007·Granted Nov 10, 2009·3 cites·14 claims
- 2972US7294864B2Flip chip type nitride semiconductor light-emitting diodeSAMSUNG ELECTRO MECH·Filed 2004·Granted Nov 13, 2007·18 cites·11 claims
- 3071US7818159B2Intelligent system and method for monitoring generator reactive power limit using machine model parametersKOREA ELECTROTECH RES INST·Filed 2007·Granted Oct 19, 2010·12 cites·16 claims
- 3171US6334086B1Method and apparatus for collecting traffic informationROTIS INC ROAD TRAFFIC INFORMA·Filed 2000·Granted Dec 25, 2001·56 cites·10 claims
- 3269US8716694B2Semiconductor light emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted May 6, 2014·1 cites·20 claims
- 3369US7893443B2Nitride based semiconductor light-emitting deviceSAMSUNG LED CO LTD·Filed 2006·Granted Feb 22, 2011·3 cites·16 claims
- 3468US7977134B2Nitride-based semiconductor light emitting diode and method of manufacturing the sameSAMSUNG LED CO LTD·Filed 2006·Granted Jul 12, 2011·2 cites·16 claims
- 3567US5158463AMethod of manufacturing both low and high voltage BiCMOS transistors in the same semiconductor substrateSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Oct 27, 1992·25 cites·3 claims
- 3666US7236898B2System and method for calculating real-time voltage stability risk index in power system using time series dataKOREA ELECTROTECH RES INST·Filed 2005·Granted Jun 26, 2007·9 cites·11 claims
- 3765US10826228B2ConnectorLG INNOTEK CO LTD·Filed 2018·Granted Nov 3, 2020·2 cites·20 claims
- 3865US8357560B2Package of MEMS device and method for fabricating the sameMAGNACHIP SEMICONDUCTOR LTD·Filed 2009·Granted Jan 22, 2013·1 cites·18 claims
- 3964USRE41653EMethod of forming metal wiring of semiconductor deviceMAGNACHIP SEMICONDUCTOR LTD·Filed 2008·Granted Sep 7, 2010·0 cites·6 claims
- 4064US5105252ALow voltage BiCMOS and high voltage BiCMOS the same substrateSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Apr 14, 1992·22 cites·3 claims
- 4163US7135716B2Gallium nitride-based semiconductor light-emitting deviceSAMSUNG ELECTRO MECH·Filed 2004·Granted Nov 14, 2006·11 cites·10 claims
- 4263US7067401B2Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated therebySAMSUNG ELECTRO MECH·Filed 2005·Granted Jun 27, 2006·1 cites·3 claims
- 4362US2005179027A1Nitride based semiconductor light-emitting deviceSAMSUNG ELECTRO MECH·Filed 2004·Application pending·0 cites
- 4461US8333112B2Frequency tuning of disc resonator gyroscopes via resonator mass perturbation based on an identified modelSCHWARTZ DAVID M·Filed 2009·Granted Dec 18, 2012·3 cites·23 claims
- 4558US10256396B2Magnetic sensor and method of fabricating the sameMAGNACHIP SEMICONDUCTOR LTD·Filed 2016·Granted Apr 9, 2019·0 cites·22 claims
- 4658US9847376B2Electronic deviceSK HYNIX INC·Filed 2015·Granted Dec 19, 2017·1 cites·17 claims
- 4758US7687294B2Nitride semiconductor device and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2007·Granted Mar 30, 2010·4 cites·6 claims
- 4858US6336075B1Apparatus and method for guiding a vehicleROTIS INC·Filed 2000·Granted Jan 1, 2002·20 cites·13 claims
- 4957US7018912B2Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated therebySAMSUNG ELECTRO MECH·Filed 2004·Granted Mar 28, 2006·4 cites·6 claims
- 5055US7220675B2Method of forming metal wiring of semiconductor deviceMAGNACHIP SEMICONDUCTOR LTD·Filed 2005·Granted May 22, 2007·0 cites·6 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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