Inventor · disambiguated record
Durai Vishak Nirmal Ramaswamy
Also filed as: RAMASWAMY DURAI V · RAMASWAMY DURAI VISHAK · RAMASWAMY DURAI VISHAK NIRMAL
239 granted patents·40 pending applications·1,060 citations·filing 2010–2025
99Inventor score
Files withMICRON TECHNOLOGY INC268RAMASWAMY DURAI VISHAK NIRMAL6BI LEI1BREWER RHETT T1KARDA KAMAL M1
Top patents by PatentIndex Score
279 records- 0199US11101271B2Array of cross point memory cells and methods of forming an array of cross point memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 24, 2021·13 cites·11 claims
- 0299US9837420B1Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistorMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 5, 2017·46 cites·75 claims
- 0398US11552086B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 10, 2023·4 cites·14 claims
- 0498US11476252B2Memory device having 2-transistor vertical memory cell and shared channel regionMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 18, 2022·7 cites·20 claims
- 0598US11335684B2Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2020·Granted May 17, 2022·9 cites·30 claims
- 0698US11201207B2Methods of forming an array of capacitors, methods of forming an array of memory cells individually comprising a capacitor and a transistor, arrays of capacitors, and arrays of memory cells individually comprising a capacitor and a transistorMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 14, 2021·4 cites·20 claims
- 0798US11011529B2Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory array comprising memory cells individually comprising a transistor and a capacitorMICRON TECHNOLOGY INC·Filed 2018·Granted May 18, 2021·20 cites·24 claims
- 0898US10388658B1Transistors, arrays of transistors, arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, and methods of forming an array of transistorsMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 20, 2019·21 cites·30 claims
- 0998US10229874B1Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arraysMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 12, 2019·23 cites·29 claims
- 1098US10062745B2Methods of forming an array of capacitors, methods of forming an array of memory cells individually comprising a capacitor and a transistor, arrays of capacitors, and arrays of memory cells individually comprising a capacitor and a transistorMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 28, 2018·18 cites·64 claims
- 1198US10020360B1Integrated memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 10, 2018·22 cites·12 claims
- 1298US9876018B2Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric materialMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 23, 2018·27 cites·41 claims
- 1398US9842839B1Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-aboveMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 12, 2017·36 cites·76 claims
- 1498US9761715B2Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistorsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 12, 2017·22 cites·7 claims
- 1598US9613676B1Writing to cross-point non-volatile memoryMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 4, 2017·68 cites·35 claims
- 1698US9472560B2Memory cell and an array of memory cellsMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 18, 2016·92 cites·29 claims
- 1798US9305929B1Memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 5, 2016·60 cites·35 claims
- 1898US9263577B2Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistorsMICRON TECHNOLOGY INC·Filed 2014·Granted Feb 16, 2016·35 cites·14 claims
- 1997US12266660B2Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2023·Granted Apr 1, 2025·3 cites·20 claims
- 2097US11616073B1Memory device having 2-transistor vertical memory cell and wrapped data line structureMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 28, 2023·3 cites·17 claims
- 2197US10879344B2Memory cells comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 29, 2020·4 cites·28 claims
- 2297US10804273B2Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory arrayMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 13, 2020·10 cites·18 claims
- 2397US10396145B2Memory cells comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 27, 2019·19 cites·29 claims
- 2497US10163917B2Cell disturb prevention using a leaker device to reduce excess charge from an electronic deviceMICRON TECHNOLOGY INC·Filed 2016·Granted Dec 25, 2018·23 cites·19 claims
- 2597US9935114B1Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitorsMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 3, 2018·17 cites·55 claims
- 2697US9786349B1Cell performance recovery using cycling techniquesMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 10, 2017·28 cites·18 claims
- 2797US9761580B1Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitorsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 12, 2017·23 cites·27 claims
- 2897US9721639B1Memory cell imprint avoidanceMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 1, 2017·23 cites·25 claims
- 2997US9608111B2Recessed transistors containing ferroelectric materialMICRON TECHNOLOGY INC·Filed 2015·Granted Mar 28, 2017·13 cites·9 claims
- 3097US9159829B1Recessed transistors containing ferroelectric materialMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 13, 2015·24 cites·29 claims
- 3196US11871589B2Memory device having 2-transistor memory cell and access line plateMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
- 3296US11049804B2Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arraysMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 29, 2021·3 cites·20 claims
- 3396US10943953B2Semiconductor devices, hybrid transistors, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 9, 2021·9 cites·26 claims
- 3496US9853211B2Array of cross point memory cells individually comprising a select device and a programmable deviceMICRON TECHNOLOGY INC·Filed 2015·Granted Dec 26, 2017·13 cites·16 claims
- 3596US9673203B2Memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 6, 2017·7 cites·28 claims
- 3695US12219783B2Semiconductor devices and hybrid transistorsMICRON TECHNOLOGY INC·Filed 2023·Granted Feb 4, 2025·1 cites·16 claims
- 3795US11778806B2Memory device having 2-transistor vertical memory cell and separate read and write gatesMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 3, 2023·2 cites·18 claims
- 3895US11688450B2Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 27, 2023·3 cites·10 claims
- 3995US10892264B2Memory device having 2-transistor vertical memory cellMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 12, 2021·11 cites·23 claims
- 4095US10650978B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturbMICRON TECHNOLOGY INC·Filed 2017·Granted May 12, 2020·7 cites·11 claims
- 4195US10636471B2Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arraysMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 28, 2020·15 cites·18 claims
- 4295US10622366B2Methods of forming an array comprising pairs of vertically opposed capacitors and arrays comprising pairs of vertically opposed capacitorsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 14, 2020·10 cites·19 claims
- 4395US10529720B2Memory cell, an array of memory cells individually comprising a capacitor and a transistor with the array comprising rows of access lines and columns of digit lines, a 2T-1C memory cell, and methods of forming an array of capacitors and access transistors there-aboveMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 7, 2020·8 cites·20 claims
- 4494US12080331B2Memory device having 2-transistor vertical memory cell and shield structuresMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 3, 2024·2 cites·10 claims
- 4594US11950426B2Memory device having 2-transistor vertical memory cell and wrapped data line structureMICRON TECHNOLOGY INC·Filed 2023·Granted Apr 2, 2024·1 cites·20 claims
- 4694US10443046B2Arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, methods of forming a tier of an array of memory cells, and methods of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistorMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 15, 2019·6 cites·23 claims
- 4794US9887204B2Memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 6, 2018·4 cites·19 claims
- 4894US9773551B2Memory programming methods and memory systemsMICRON TECHNOLOGY INC·Filed 2016·Granted Sep 26, 2017·16 cites·34 claims
- 4994US9041090B2Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells including metalMICRON TECHNOLOGY INC·Filed 2013·Granted May 26, 2015·15 cites·19 claims
- 5093US11856799B2Semiconductor devices, hybrid transistors, and related methodsMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 26, 2023·2 cites·18 claims
Showing the top 50 of 279 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Durai Vishak Nirmal Ramaswamy files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →