Inventor · disambiguated record
Nae-Hak Park
Also filed as: PARK NAE-HAK
11 granted patents·214 citations·filing 1996–2001
91Inventor score
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11 records- 0187US5767013AMethod for forming interconnection in semiconductor pattern deviceLG SEMICON CO LTD·Filed 1997·Granted Jun 16, 1998·88 cites·21 claims
- 0264US5801099AMethod for forming interconnection of semiconductor deviceLG SEMICON CO LTD·Filed 1996·Granted Sep 1, 1998·32 cites·20 claims
- 0361US6096646AMethod for forming metal line of semiconductor deviceLG SEMICON CO LTD·Filed 1998·Granted Aug 1, 2000·26 cites·8 claims
- 0459US6344391B1Fabrication method of semiconductor device with diagonal capacitor bit lineHYUNDAI ELECTRONICS IND·Filed 2000·Granted Feb 5, 2002·6 cites·9 claims
- 0558US5663102AMethod for forming multi-layered metal wiring semiconductor element using cmp or etch backLG SEMICON CO LTD·Filed 1996·Granted Sep 2, 1997·25 cites·18 claims
- 0650US6573186B2Method for forming plug of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jun 3, 2003·3 cites·15 claims
- 0749US5792704AMethod for fabricating wiring in semiconductor deviceLG SEMICON CO LTD·Filed 1996·Granted Aug 11, 1998·16 cites·40 claims
- 0845US6573174B2Method for reducing surface defects of semiconductor substratesHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jun 3, 2003·4 cites·10 claims
- 0938US6133598ASemiconductor device with diagonal capacitor bit line and fabrication method thereofLG SEMICON CO LTD·Filed 1998·Granted Oct 17, 2000·4 cites·25 claims
- 1035US6004397ATEOS-O3 oxidizing film depositing system and process for supplying ozone (O3) theretoLG SEMICON CO LTD·Filed 1999·Granted Dec 21, 1999·6 cites·6 claims
- 1132US5891810AProcess for supplying ozone (O3) to TEOS-O3 oxidizing film depositing systemLG SEMICON CO LTD·Filed 1996·Granted Apr 6, 1999·4 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →