Inventor · disambiguated record
Helmut Strack
Also filed as: STRACK HELMUT
75 granted patents·12 pending applications·1,643 citations·filing 1976–2022
99Inventor score
Files withINFINEON TECHNOLOGIES AG39SIEMENS AG15INFINEON TECHNOLOGIES AUSTRIA13MAUDER ANTON5SCHULZE HANS-JOACHIM5
Top patents by PatentIndex Score
87 records- 0198US7538412B2Semiconductor device with a field stop zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 26, 2009·144 cites·14 claims
- 0297US7879699B2Wafer and a method for manufacturing a waferINFINEON TECHNOLOGIES AG·Filed 2007·Granted Feb 1, 2011·66 cites·10 claims
- 0395US7759163B2Semiconductor moduleINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jul 20, 2010·49 cites·17 claims
- 0495US6184555B1Field effect-controlled semiconductor componentSIEMENS AG·Filed 1997·Granted Feb 6, 2001·479 cites·3 claims
- 0594US7800217B2Power semiconductor device connected in distinct layers of plasticINFINEON TECHNOLOGIES AG·Filed 2007·Granted Sep 21, 2010·27 cites·25 claims
- 0694US6630698B1High-voltage semiconductor componentINFINEON AG·Filed 1999·Granted Oct 7, 2003·115 cites·11 claims
- 0792US7947532B2Power semiconductor device and method for its productionINFINEON TECHNOLOGIES AG·Filed 2010·Granted May 24, 2011·12 cites·15 claims
- 0892US6504230B2Compensation component and method for fabricating the compensation componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 7, 2003·63 cites·5 claims
- 0991US9012980B1Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 21, 2015·11 cites·20 claims
- 1090US7982289B2Wafer and a method for manufacturing a waferINFINEON TECHNOLOGIES AG·Filed 2010·Granted Jul 19, 2011·8 cites·18 claims
- 1188US6828609B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 7, 2004·41 cites·7 claims
- 1287US6870201B1High voltage resistant edge structure for semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 1998·Granted Mar 22, 2005·74 cites·30 claims
- 1387US6852567B1Method of assembling a semiconductor device packageINFINEON TECHNOLOGIES AG·Filed 1999·Granted Feb 8, 2005·100 cites·10 claims
- 1487US6649459B2Method for manufacturing a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 18, 2003·38 cites·14 claims
- 1586US8541833B2Power transistor device vertical integrationSCHULZE HANS-JOACHIM·Filed 2011·Granted Sep 24, 2013·8 cites·14 claims
- 1684US8786012B2Power semiconductor device and a method for forming a semiconductor deviceMAUDER ANTON·Filed 2012·Granted Jul 22, 2014·5 cites·15 claims
- 1784US7554137B2Power semiconductor component with charge compensation structure and method for the fabrication thereofINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jun 30, 2009·8 cites·29 claims
- 1883US6960798B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 1, 2005·25 cites·18 claims
- 1983US6441408B2Power semiconductor component for high reverse voltagesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 27, 2002·35 cites·25 claims
- 2082US7795660B2Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 14, 2010·8 cites·8 claims
- 2182US7087981B2Metal semiconductor contact, semiconductor component, integrated circuit arrangement and methodINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 8, 2006·23 cites·12 claims
- 2280US9171728B2Method for forming a power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Oct 27, 2015·3 cites·10 claims
- 2379US7560783B2Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jul 14, 2009·5 cites·28 claims
- 2477US8637341B2Semiconductor moduleOTREMBA RALF·Filed 2008·Granted Jan 28, 2014·7 cites·16 claims
- 2576US4893165ABipolar transistor controllable by field effectSIEMENS AG·Filed 1989·Granted Jan 9, 1990·32 cites·11 claims
- 2675US8415219B2Method of manufacturing a DMOS trench transistorHIRLER FRANZ·Filed 2006·Granted Apr 9, 2013·5 cites·16 claims
- 2775US8378384B2Wafer and method for producing a waferINFINEON TECHNOLOGIES AG·Filed 2007·Granted Feb 19, 2013·4 cites·25 claims
- 2874US12107141B2Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zoneINFINEON TECHNOLOGIES AG·Filed 2022·Granted Oct 1, 2024·0 cites·21 claims
- 2974US6894329B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 17, 2005·15 cites·18 claims
- 3073US10325996B2Method for producing a doped semiconductor layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 18, 2019·1 cites·17 claims
- 3173US8164173B2Panel, semiconductor device and method for the production thereofKOLLER ADOLF·Filed 2010·Granted Apr 24, 2012·3 cites·13 claims
- 3273US6819089B2Power factor correction circuit with high-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 16, 2004·19 cites·35 claims
- 3372US6825514B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 30, 2004·15 cites·5 claims
- 3472US4612448AElectronic switchSIEMENS AG·Filed 1985·Granted Sep 16, 1986·19 cites·4 claims
- 3571US8263450B2Power semiconductor component with charge compensation structure and method for the fabrication thereofSEDLMAIER STEFAN·Filed 2009·Granted Sep 11, 2012·3 cites·35 claims
- 3671US7772693B2Panel, semiconductor device and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2007·Granted Aug 10, 2010·4 cites·30 claims
- 3771US7344936B2Semiconductor wafer with a wiring structure, a semiconductor component, and methods for their productionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 18, 2008·3 cites·14 claims
- 3870US7304349B2Power semiconductor component with increased robustnessINFINEON TECHNOLOGIES AG·Filed 2005·Granted Dec 4, 2007·4 cites·18 claims
- 3967US11302795B2Method of manufacturing a semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Apr 12, 2022·0 cites·14 claims
- 4065US10651037B2Method for fabricating a doped zone in a semiconductor bodySCHULZE HANS JOACHIM·Filed 2005·Granted May 12, 2020·2 cites·12 claims
- 4165US6812524B2Field effect controlled semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 2, 2004·12 cites·14 claims
- 4264US8513730B2Semiconductor component with vertical structures having a high aspect ratio and methodMAUDER ANTON·Filed 2008·Granted Aug 20, 2013·2 cites·15 claims
- 4362US5311052APlanar semiconductor component with stepped channel stopper electrodeSIEMENS AG·Filed 1982·Granted May 10, 1994·16 cites·2 claims
- 4461US7439198B2Method for fabricating a buried metallic layer in a semiconductor body and semiconductor component having a buried metallic layerINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 21, 2008·1 cites·25 claims
- 4560US2011147883A1Semiconductor body with a buried material layer and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Application pending·0 cites
- 4659US7195994B2Method for production of deep p regions in silicon, and semiconductor components produced using the methodINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 27, 2007·6 cites·15 claims
- 4759US5087577AManufacturing method for a power misfetSIEMENS AG·Filed 1991·Granted Feb 11, 1992·19 cites·6 claims
- 4858US8975151B2Semiconductor body with a buried material layer and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Mar 10, 2015·0 cites·20 claims
- 4958US5583060AMethod for manufacturing field effect controlled semiconductor componentsSIEMENS AG·Filed 1995·Granted Dec 10, 1996·19 cites·10 claims
- 5058US2009298270A1Method for producing a semiconductorINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Application pending·0 cites
Showing the top 50 of 87 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Helmut Strack files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →