Inventor · disambiguated record
John A. Fitzsimmons
Also filed as: FITZSIMMONS JOHN · FITZSIMMONS JOHN A · FITZSIMMONS JOHN ANTHONY
101 granted patents·23 pending applications·1,388 citations·filing 1990–2019
99Inventor score
Top patents by PatentIndex Score
124 records- 0199US8916448B2Metal to metal bonding for stacked (3D) integrated circuitsIBM·Filed 2013·Granted Dec 23, 2014·82 cites·20 claims
- 0296US8304863B2Electromigration immune through-substrate viasFILIPPI RONALD G·Filed 2010·Granted Nov 6, 2012·38 cites·8 claims
- 0394US7517736B2Structure and method of chemically formed anchored metallic viasIBM·Filed 2006·Granted Apr 14, 2009·34 cites·7 claims
- 0493US9589806B1Integrated circuit with replacement gate stacks and method of forming sameGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 7, 2017·10 cites·13 claims
- 0593US6617690B1Interconnect structures containing stress adjustment cap layerIBM·Filed 2002·Granted Sep 9, 2003·79 cites·22 claims
- 0692US6252295B1Adhesion of silicon carbide filmsIBM·Filed 2000·Granted Jun 26, 2001·67 cites·14 claims
- 0791US8647445B1Process for cleaning semiconductor devices and/or tooling during manufacturing thereofIBM·Filed 2012·Granted Feb 11, 2014·12 cites·17 claims
- 0891US8129286B2Reducing effective dielectric constant in semiconductor devicesEDELSTEIN DANIEL C·Filed 2008·Granted Mar 6, 2012·11 cites·32 claims
- 0991US7892940B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2007·Granted Feb 22, 2011·11 cites·25 claims
- 1091US7405147B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2004·Granted Jul 29, 2008·35 cites·31 claims
- 1191US7015150B2Exposed pore sealing post patterningIBM·Filed 2004·Granted Mar 21, 2006·42 cites·18 claims
- 1290US8618036B2Aqueous cerium-containing solution having an extended bath lifetime for removing mask materialAFZALI-ARDAKANI ALI·Filed 2011·Granted Dec 31, 2013·11 cites·23 claims
- 1390US7709344B2Integrated circuit fabrication process using gas cluster ion beam etchingIBM·Filed 2005·Granted May 4, 2010·16 cites·15 claims
- 1490US6626188B2Method for cleaning and preconditioning a chemical vapor deposition chamber domeIBM·Filed 2001·Granted Sep 30, 2003·46 cites·24 claims
- 1589US8343868B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2011·Granted Jan 1, 2013·6 cites·20 claims
- 1689US6838355B1Damascene interconnect structures including etchback for low-k dielectric materialsIBM·Filed 2003·Granted Jan 4, 2005·54 cites·40 claims
- 1788US7480990B2Method of making conductor contacts having enhanced reliabilityIBM·Filed 2006·Granted Jan 27, 2009·17 cites·20 claims
- 1888US6917108B2Reliable low-k interconnect structure with hybrid dielectricIBM·Filed 2002·Granted Jul 12, 2005·49 cites·32 claims
- 1988US6737747B2Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereofIBM·Filed 2002·Granted May 18, 2004·43 cites·13 claims
- 2088US5240878AMethod for forming patterned films on a substrateIBM·Filed 1991·Granted Aug 31, 1993·139 cites·4 claims
- 2187US9806025B2SOI wafers with buried dielectric layers to prevent Cu diffusionGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 31, 2017·4 cites·10 claims
- 2287US7592685B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2007·Granted Sep 22, 2009·7 cites·20 claims
- 2387US6960519B1Interconnect structure improvementsIBM·Filed 2004·Granted Nov 1, 2005·43 cites·17 claims
- 2487US5091103APhotoresist stripperDEAN ALICIA·Filed 1990·Granted Feb 25, 1992·98 cites·24 claims
- 2585US7109093B2Crackstop with release layer for crack control in semiconductorsIBM·Filed 2004·Granted Sep 19, 2006·32 cites·19 claims
- 2684US8835326B2Titanium-nitride removalFITZSIMMONS JOHN A·Filed 2012·Granted Sep 16, 2014·6 cites·22 claims
- 2783US9671215B2Wafer to wafer alignmentIBM·Filed 2014·Granted Jun 6, 2017·5 cites·20 claims
- 2883US8889491B2Method of forming electronic fuse line with modified capIBM·Filed 2013·Granted Nov 18, 2014·5 cites·8 claims
- 2983US7488679B2Interconnect structure and process of making the sameIBM·Filed 2006·Granted Feb 10, 2009·13 cites·30 claims
- 3083US6939797B2Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereofIBM·Filed 2003·Granted Sep 6, 2005·26 cites·20 claims
- 3182US8956973B2Bottom-up plating of through-substrate viasFAROOQ MUKTA G·Filed 2012·Granted Feb 17, 2015·5 cites·9 claims
- 3282US8796150B2Bilayer trench first hardmask structure and process for reduced defectivityAKINMADE-YUSUFF HAKEEM B S·Filed 2011·Granted Aug 5, 2014·8 cites·11 claims
- 3382US7015580B2Roughened bonding pad and bonding wire surfaces for low pressure wire bondingIBM·Filed 2003·Granted Mar 21, 2006·30 cites·13 claims
- 3482US6887783B2Bilayer HDP CVD/PE CVD cap in advance BEOL interconnect structures and method thereofINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 3, 2005·26 cites·18 claims
- 3581US7566649B2Compressible films surrounding solder connectorsIBM·Filed 2007·Granted Jul 28, 2009·8 cites·19 claims
- 3680US10242947B2SOI wafers with buried dielectric layers to prevent CU diffusionGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 26, 2019·2 cites·3 claims
- 3780US6784485B1Diffusion barrier layer and semiconductor device containing sameIBM·Filed 2000·Granted Aug 31, 2004·25 cites·15 claims
- 3879US9818637B2Device layer transfer with a preserved handle wafer sectionGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 14, 2017·2 cites·12 claims
- 3979US9070625B2Selective etch chemistry for gate electrode materialsIBM·Filed 2013·Granted Jun 30, 2015·3 cites·19 claims
- 4079US8835307B2Method and structure for reworking antireflective coating over semiconductor substrateAKINMADE-YUSUFF HAKEEM·Filed 2012·Granted Sep 16, 2014·4 cites·11 claims
- 4179US7541679B2Exposed pore sealing post patterningIBM·Filed 2005·Granted Jun 2, 2009·5 cites·20 claims
- 4278US8791005B2Sidewalls of electroplated copper interconnectsFAROOQ MUKTA G·Filed 2012·Granted Jul 29, 2014·3 cites·8 claims
- 4378US7517790B2Method and structure to enhance temperature/humidity/bias performance of semiconductor devices by surface modificationIBM·Filed 2005·Granted Apr 14, 2009·7 cites·16 claims
- 4478US7341948B2Method of making a semiconductor structure with a plating enhancement layerIBM·Filed 2006·Granted Mar 11, 2008·8 cites·20 claims
- 4577US8288271B2Method for reworking antireflective coating over semiconductor substrateAKINMADE YUSUFF HAKEEM·Filed 2009·Granted Oct 16, 2012·5 cites·13 claims
- 4677US6493078B1Method and apparatus to improve coating qualityIBM·Filed 2001·Granted Dec 10, 2002·15 cites·19 claims
- 4775US9461017B1Electronic package that includes a plurality of integrated circuit devices bonded in a three-dimensional stack arrangementGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 4, 2016·2 cites·18 claims
- 4875US9153558B2Electromigration immune through-substrate viasFILIPPI RONALD G·Filed 2012·Granted Oct 6, 2015·3 cites·9 claims
- 4973US9058976B2Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereofIBM·Filed 2012·Granted Jun 16, 2015·2 cites·6 claims
- 5073US7670497B2Oxidant and passivant composition and method for use in treating a microelectronic structureIBM·Filed 2007·Granted Mar 2, 2010·4 cites·1 claims
Showing the top 50 of 124 patent records by PatentIndex Score.
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