Inventor · disambiguated record
Haoran Shi
Also filed as: SHI HAORAN
7 granted patents·1 pending application·12 citations·filing 2012–2018
77Inventor score
Top patents by PatentIndex Score
8 records- 0183US8796693B2Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnOSEOUL SEMICONDUCTOR CO LTD·Filed 2012·Granted Aug 5, 2014·7 cites·27 claims
- 0273US9312145B2Conformal nitridation of one or more fin-type transistor layersGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·2 cites·18 claims
- 0368US9698269B2Conformal nitridation of one or more fin-type transistor layersGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 4, 2017·1 cites·13 claims
- 0467US9202697B2Forming a gate by depositing a thin barrier layer on a titanium nitride capGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 1, 2015·2 cites·11 claims
- 0556US10535803B2Light-emitting diode and method for manufacturing sameSEOUL SEMICONDUCTOR CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·10 claims
- 0653US8957427B2Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnOSEOUL SEMICONDUCTOR CO LTD·Filed 2014·Granted Feb 17, 2015·0 cites·8 claims
- 0751US10020425B2Light-emitting diode and method for manufacturing sameSEOUL SEMICONDUCTOR CO LTD·Filed 2013·Granted Jul 10, 2018·0 cites·9 claims
- 0831US2016254145A1Methods for fabricating semiconductor structure with condensed silicon germanium layerGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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