Inventor · disambiguated record
Woun-Suck Yang
Also filed as: YANG WOUN-SUCK
13 granted patents·3 pending applications·178 citations·filing 1995–2009
92Inventor score
Top patents by PatentIndex Score
16 records- 0191US7977725B2Integrated circuit semiconductor device including stacked level transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 12, 2011·20 cites·17 claims
- 0288US7592686B2Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 22, 2009·13 cites·11 claims
- 0388US7153733B2Method of fabricating fin field effect transistor using isotropic etching techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 26, 2006·14 cites·11 claims
- 0483US7279774B2Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trenchSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 9, 2007·26 cites·8 claims
- 0581US7803684B2Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 28, 2010·6 cites·18 claims
- 0681US7655988B2Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 2, 2010·8 cites·14 claims
- 0777US5668391AVertical thin film transistorLG SEMICON CO LTD·Filed 1997·Granted Sep 16, 1997·48 cites·10 claims
- 0866US7393769B2Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 1, 2008·3 cites·23 claims
- 0964US7429505B2Method of fabricating fin field effect transistor using isotropic etching techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 30, 2008·2 cites·12 claims
- 1059US6165823AThin film transistor and a fabricating method thereforLG SEMICON CO LTD·Filed 1997·Granted Dec 26, 2000·21 cites·7 claims
- 1157US5723889ASemiconductor memory device and method for fabricating the sameLG SEMICON CO LTD·Filed 1995·Granted Mar 3, 1998·17 cites·28 claims
- 1253US7935600B2Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 3, 2011·0 cites·20 claims
- 1348US2007293011A1Field effect transistor device with channel fin structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1442US2008084731A1DRAM devices including fin transistors and methods of operating the DRAM devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1541US9012982B2Recessed transistor and method of manufacturing the sameKIM KEUN-NAM·Filed 2008·Granted Apr 21, 2015·0 cites·10 claims
- 1640US2006046370A1Method of manufacturing a transistor with void-free gate electrodeOH YONG-CHUL·Filed 2005·Application pending·0 cites
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